C. Pedersen, J. Krog, C. Christensen, S. T. Jespersen, E. Thomsen
{"title":"Combined differential and relative pressure sensor based on a double-bridge structure","authors":"C. Pedersen, J. Krog, C. Christensen, S. T. Jespersen, E. Thomsen","doi":"10.1109/ICSENS.2003.1279029","DOIUrl":null,"url":null,"abstract":"A combined differential and relative MEMS pressure sensor based on a double piezoresistive Wheatstone bridge structure is presented. The developed sensor has a conventional (inner) bridge on a micro machined membrane and a secondary (outer) bridge on the chip substrate. The double-bridge structure has previously been used e.g. in the compensation of temperature-induced errors in MEMS pressure sensors as stated in M. Akbar and M. A. Shanblatt (1992), J. J. Dziuban et al. (1994) and Young-Tae Lee and Hee-Don Seo (1995). An approach is demonstrated for a combined measurement of sensor output from inner and outer bridge, leading to the deduction of both differential and relative media pressure (with respect to atm. pressure), and a significant improvement in differential pressure sensor accuracy. Output from both bridges depends linearly on both differential and absolute media pressure. Furthermore, the sensor stress distributions involved are studied and supported by extensive 3D FEM stress analysis.","PeriodicalId":369277,"journal":{"name":"Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSENS.2003.1279029","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
A combined differential and relative MEMS pressure sensor based on a double piezoresistive Wheatstone bridge structure is presented. The developed sensor has a conventional (inner) bridge on a micro machined membrane and a secondary (outer) bridge on the chip substrate. The double-bridge structure has previously been used e.g. in the compensation of temperature-induced errors in MEMS pressure sensors as stated in M. Akbar and M. A. Shanblatt (1992), J. J. Dziuban et al. (1994) and Young-Tae Lee and Hee-Don Seo (1995). An approach is demonstrated for a combined measurement of sensor output from inner and outer bridge, leading to the deduction of both differential and relative media pressure (with respect to atm. pressure), and a significant improvement in differential pressure sensor accuracy. Output from both bridges depends linearly on both differential and absolute media pressure. Furthermore, the sensor stress distributions involved are studied and supported by extensive 3D FEM stress analysis.
提出了一种基于双压阻惠斯顿电桥结构的差分和相对MEMS组合压力传感器。所开发的传感器在微机械薄膜上有一个常规(内)桥,在芯片衬底上有一个次级(外)桥。如M. Akbar和M. A. Shanblatt (1992), J. J. Dziuban等人(1994)和Young-Tae Lee和Hee-Don Seo(1995)所述,双桥结构先前已被用于补偿MEMS压力传感器中的温度引起的误差。演示了一种方法,用于联合测量传感器输出从内部和外部桥,导致扣除差压和相对介质压力(相对于atm)。压力),并显著提高了差压传感器的精度。两座桥的输出与差压和绝对介质压力呈线性关系。此外,所涉及的传感器应力分布进行了研究和广泛的三维有限元应力分析的支持。