IET Nanodielectrics最新文献_第3页

Improving the dielectric properties of polypropylene for metallised film capacitors based on cyclic olefin copolymer blending 基于环状烯烃共聚物混合物改善金属化薄膜电容器用聚丙烯的介电性能

IF 3.8

IET Nanodielectrics Pub Date : 2024-03-11 DOI: 10.1049/nde2.12072

Meng Xiao, Mengdie Zhang, Boxue Du, Kailun Fan

引用次数: 0

Data sonification of film capacitors 薄膜电容器的数据超声处理

IF 2.7

IET Nanodielectrics Pub Date : 2024-03-07 DOI: 10.1049/nde2.12078

Yong-Xin Zhang, Di-Fan Liu, Xin-Yi Wei, Xin-Jie Wang, Fang-Yi Chen, Qi-Kun Feng, Wen-Yuan Cao, Wen-Zhuo Dong, Faisal Mehmood Shah, Yu-Xiao Liu, Zhi-Yuan Wu, Jian-Tao Wang, Shao-Long Zhong, Zhi-Min Dang

{"title":"Data sonification of film capacitors","authors":"Yong-Xin Zhang, Di-Fan Liu, Xin-Yi Wei, Xin-Jie Wang, Fang-Yi Chen, Qi-Kun Feng, Wen-Yuan Cao, Wen-Zhuo Dong, Faisal Mehmood Shah, Yu-Xiao Liu, Zhi-Yuan Wu, Jian-Tao Wang, Shao-Long Zhong, Zhi-Min Dang","doi":"10.1049/nde2.12078","DOIUrl":"10.1049/nde2.12078","url":null,"abstract":"Film capacitors are playing an increasingly important role in power-related fields, driven by the continuous development of dielectric materials and practical needs. Long-term accumulation has also led to an increasing wealth of data related to film capacitors. Sonification opens up a new way for people to make good use of data from film capacitors. A framework for sonifying film capacitors data based on TwoTone is presented. Based on the analysis and discussion, it is clear that the sonification results can easily represent the monotonic variation pattern of film capacitors data. What's more, the sonification results increase the possibility that people pay attention to the changing trend of film capacitors data when there is no significant difference in the visual perception of the data. In addition to providing a new way of music generation of electrical equipment, the method proposed is expected to contribute to theory reference in typical scenarios, such as factory calibration of film capacitors, monitoring of film capacitor operation status, and presentation of statistical data of film capacitors' dielectric materials, which will help us to better understand the distribution characteristics of polymer films.","PeriodicalId":36855,"journal":{"name":"IET Nanodielectrics","volume":"7 2","pages":"88-95"},"PeriodicalIF":2.7,"publicationDate":"2024-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/nde2.12078","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140077412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electromagnetic optimization of piezoelectric ceramic and its application in mechanical antenna 压电陶瓷的电磁优化及其在机械天线中的应用

IF 2.7

IET Nanodielectrics Pub Date : 2024-01-18 DOI: 10.1049/nde2.12077

Song Gao, Liwei Wang, Jingtong Lu, Shuai Zhang, Hongyu Sun, Kai Huang, Jianchun Xu, Yanan Hao

{"title":"Electromagnetic optimization of piezoelectric ceramic and its application in mechanical antenna","authors":"Song Gao, Liwei Wang, Jingtong Lu, Shuai Zhang, Hongyu Sun, Kai Huang, Jianchun Xu, Yanan Hao","doi":"10.1049/nde2.12077","DOIUrl":"10.1049/nde2.12077","url":null,"abstract":"Mechanical antennas have garnered considerable attention due to their ability to address the challenges posed by the significant size and high energy consumption associated with traditional electric antennas when operating at low frequencies. Here, a compact and structurally stable mechanical antenna design is presented. The proposed antenna is constructed using cylindrical piezoelectric ceramics, which have dimensions smaller than 1/1000 of the wavelength. The scrutiny of the influence exerted by the antenna feed area and material thickness on the radiation performance was undertaken, followed by an exhaustive discourse on these effects. Experimental measurements demonstrate the practical functionalities of signal coding, transmission, and reception in the low-frequency communication system. Notably, at a frequency of 288 kHz, a single proposed antenna achieves an effective information transmission distance of 60 m using binary information coding. This remarkable outcome underscores the potential of this design in facilitating the development of portable and cost-effective wireless communication equipment for low-frequency applications.","PeriodicalId":36855,"journal":{"name":"IET Nanodielectrics","volume":"7 1","pages":"1-6"},"PeriodicalIF":2.7,"publicationDate":"2024-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/nde2.12077","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139615665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A strong dependence of sputtering power on c-axis oriented aluminium nitride on Si (111): A structural and electrical study 溅射功率对 Si (111) 上 c 轴取向氮化铝的强烈依赖性：结构和电学研究

IF 2.7

IET Nanodielectrics Pub Date : 2024-01-03 DOI: 10.1049/nde2.12076

Sandeep Sanjeeva, Jyothilakshmi Rudresh, K. B. Vinayakumar, K. K. Nagaraja

{"title":"A strong dependence of sputtering power on c-axis oriented aluminium nitride on Si (111): A structural and electrical study","authors":"Sandeep Sanjeeva, Jyothilakshmi Rudresh, K. B. Vinayakumar, K. K. Nagaraja","doi":"10.1049/nde2.12076","DOIUrl":"10.1049/nde2.12076","url":null,"abstract":"Growing and controlling the c-axis orientation of the aluminium nitride (AlN) thin film on unheated Si (111) substrates using reactive magnetron sputtering are challenging. Sputtering parameters such as nitrogen concentration and sputtering power were effectively tuned to grow the c-axis oriented AlN thin film. The results show that a low concentration of (25%) N2 is enough for forming AlN at a reduced flow rate, whereas a higher flow rate requires a higher concentration of N2. Low concentration with a low flow rate is preferred to grow AlN at low temperature and power. The poor crystallinity of AlN with (100) orientation was improved by varying the power from 75 to 175 W. The X-ray diffraction results confirmed the improvisation of crystallinity of grown AlN films and indicated the strong dependence of preferred c-axis orientation on sputtering power. Also, the dependence of sputtering power on microstrain and stress was analysed. The surface morphology study by field emission scanning electron microscopy and topography measured by an atomic force microscope shows a dependence on sputtering power. The high c-axis orientation was observed at 175 W with low surface roughness, low leakage current density (2 × 10−9 A/cm2) and low dielectric constant (6.8).","PeriodicalId":36855,"journal":{"name":"IET Nanodielectrics","volume":"7 1","pages":"7-17"},"PeriodicalIF":2.7,"publicationDate":"2024-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/nde2.12076","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139387905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The effects of chlorotriﬂuoroethylene (CTFE) units on the dielectric and energy storage properties of P(VDF-CTFE) 三氟氯乙烯 (CTFE) 单元对 P(VDF-CTFE) 介电和储能特性的影响

IF 2.7

IET Nanodielectrics Pub Date : 2024-01-03 DOI: 10.1049/nde2.12075

Haoran Xie, Xi Yuan, Hang Luo, Dou Zhang

{"title":"The effects of chlorotriﬂuoroethylene (CTFE) units on the dielectric and energy storage properties of P(VDF-CTFE)","authors":"Haoran Xie, Xi Yuan, Hang Luo, Dou Zhang","doi":"10.1049/nde2.12075","DOIUrl":"10.1049/nde2.12075","url":null,"abstract":"Polyvinylidene fluoride-based ferroelectric polymers are favoured in the field of advanced high-energy-storage dielectric capacitors due to their strong spontaneous polarisation and high dielectric constant (εr). It has been confirmed that the ferroelectric behaviour and energy storage performance can be regulated by copolymerising polyvinylidene fluoride with bulky monomers such as chlorotriﬂuoroethylene, and hexaﬂuoropropylene. Past research based on these copolymers mostly focused on the preparation of composites, yet with limited discussion on the effect of copolymer composition. In this work, a series of P(VDF-CTFE) films with different chlorotriﬂuoroethylene contents were fabricated through a solution-casting method. The introduction of bulky chlorotriﬂuoroethylene units can tune the polymer crystal structure and crystallinity, alter the state of polymer chains and the response of dipoles to electric fields, and lead to dramatic changes in dielectric properties, breakdown strength (Eb), and energy storage density (Ue). As a result, the copolymer with a chlorotriﬂuoroethylene content of 15 wt% obtained the best overall performance, and the Ue reached 16.73 J/cm3 at 650 kV/mm. This work provides a basis for the optimisation of the properties of polyvinylidene fluoride-based ferroelectric polymers and the development of high Ue dielectric.","PeriodicalId":36855,"journal":{"name":"IET Nanodielectrics","volume":"7 1","pages":"18-25"},"PeriodicalIF":2.7,"publicationDate":"2024-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/nde2.12075","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139389034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Flexible smart surface coating for GIS/GIL epoxy insulators 用于 GIS/GIL 环氧绝缘子的柔性智能表面涂层

IF 2.7

IET Nanodielectrics Pub Date : 2024-01-02 DOI: 10.1049/nde2.12074

Yu-Huai Wang, Zhuo Chen, Jin Li, Zhi-Xiang Liu, Rong Chen, Hein Htet Aung, Hu-Cheng Liang, Bo-Xue Du

引用次数: 0

Enhanced electrocaloric effect over a broad temperature range in lead-free Na0.5Bi0.5TiO3-based relaxor ferroelectrics via doping with Bi(Mg0.5Zr0.5)O3 通过掺杂 Bi(Mg0.5Zr0.5)O3，在无铅 Na0.5Bi0.5TiO3 基弛豫铁电体中增强宽温度范围内的电致发光效应

IF 2.7

IET Nanodielectrics Pub Date : 2023-12-06 DOI: 10.1049/nde2.12069

Xiang Niu, Yuleng Jiang, Junying Lai, Wei Liang, Huanwei Liu, Xiaodong Jian, Xiaobo Zhao, Yingbang Yao, Bo Liang, Tao Tao, Sheng-Guo Lu

{"title":"Enhanced electrocaloric effect over a broad temperature range in lead-free Na0.5Bi0.5TiO3-based relaxor ferroelectrics via doping with Bi(Mg0.5Zr0.5)O3","authors":"Xiang Niu, Yuleng Jiang, Junying Lai, Wei Liang, Huanwei Liu, Xiaodong Jian, Xiaobo Zhao, Yingbang Yao, Bo Liang, Tao Tao, Sheng-Guo Lu","doi":"10.1049/nde2.12069","DOIUrl":"10.1049/nde2.12069","url":null,"abstract":"With an increasing demand for environmentally friendly refrigeration, the solid-state refrigeration based on the electrocaloric effect (ECE) has been drawn extensive attention. It is a challenge to maintain a large adiabatic temperature change (∆T) over a broad temperature span. Herein, the authors designed and synthesised (0.74-x) Na0.5Bi0.5TiO3-0.06BaTiO3-0.2SrTiO3-xBi(Mg0.5Zr0.5)O3 (abbreviated as NBT-xBMZ) (x = 0, 0.02, 0.04, 0.06 and 0.08) lead-free relaxor ferroelectrics. Their microstructures, dielectric properties, ferroelectric properties, ECEs and the structure-property relationships were investigated. Via doping with BMZ, an enhanced relaxor feature and a wider temperature range where multi-phases coexist were achieved. The relaxor ferroelectric characteristics were illustrated using the Vogel-Fulcher relation. The indirectly calculated ECE results showed that the optimal ΔT of 1.11 K was obtained for the x = 0.02 sample at 90°C and 70 kV/cm over a wide Tspan of 120°C, providing a potential ECE material. The direct ECE results procured using thermocouple indicated that the maximal ∆T of 2.14 K and ∆T/∆E of 0.31 K m/MV were achieved in the same sample at 70°C and 7 MV/m and the variation trend of ECE results was consistent with the indirect results. Moreover, the multi-phases coexistent strategy can be extended to other materials system to generate a large ΔT over a wide temperature range.","PeriodicalId":36855,"journal":{"name":"IET Nanodielectrics","volume":"7 2","pages":"59-67"},"PeriodicalIF":2.7,"publicationDate":"2023-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/nde2.12069","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138595188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Research progress in insulating and thermal conductivity of fluorinated graphene and its polyimide composites 氟化石墨烯及其聚酰亚胺复合材料的绝缘性和导热性研究进展

IF 2.7

IET Nanodielectrics Pub Date : 2023-12-04 DOI: 10.1049/nde2.12068

Xin Wang, Shuyan Liu, Haoyu Han, Xiangyang Liu, Xu Wang

{"title":"Research progress in insulating and thermal conductivity of fluorinated graphene and its polyimide composites","authors":"Xin Wang, Shuyan Liu, Haoyu Han, Xiangyang Liu, Xu Wang","doi":"10.1049/nde2.12068","DOIUrl":"10.1049/nde2.12068","url":null,"abstract":"The demand for innovative thermal management materials with superior thermal conductivity and electrical insulating properties has significantly increased with the development of portable and flexible electronic gadgets. Fluorinated graphene (FG) has recently attracted the attention of the scientific community because of its exceptional thermal conductivity and electrical insulating qualities. This work aims to provide a detailed analysis of the structure-property relationships inherent in FG, including both chemical and physical properties, and to explain the FG manufacturing process. Special attention should be paid to a thorough analysis of the thermodynamic conduction mechanism exhibited by FG, including the effects of corrugation size, fluorine coverage, and fluorine atom distribution on its thermal conductivity. The essay also examines in-depth the most current and cutting-edge developments addressing the utilisation of FG as a functional filler in composite-modified polyimide (PI) materials. Furthermore, it has been noted as a crucial component in answering the needs for possible applications by maximising thermal conductivity and mechanical qualities in FG/PI composites through particular FG structural engineering and increased FG-PI interaction. As a result, these elements serve as the main focus of ongoing research projects, highlighting important directions for development and investigation.","PeriodicalId":36855,"journal":{"name":"IET Nanodielectrics","volume":"7 2","pages":"47-58"},"PeriodicalIF":2.7,"publicationDate":"2023-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/nde2.12068","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138604618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Siloxane-containing polyimide films with high heat resistance and low dielectric constant 具有高耐热性和低介电常数的含硅氧烷聚酰亚胺薄膜

IF 2.7

IET Nanodielectrics Pub Date : 2023-11-23 DOI: 10.1049/nde2.12064

Song Mo, Lei Zhai, Yi Liu, Gang Han, Yan Jia, Min-Hui He, Lin Fan

{"title":"Siloxane-containing polyimide films with high heat resistance and low dielectric constant","authors":"Song Mo, Lei Zhai, Yi Liu, Gang Han, Yan Jia, Min-Hui He, Lin Fan","doi":"10.1049/nde2.12064","DOIUrl":"10.1049/nde2.12064","url":null,"abstract":"A series of siloxane-containing polyimide films (PIS) were prepared by copolymerising with rigid aromatic dianhydride, siloxane diamines and six different aromatic diamines. The effects of siloxane structures, fluorine and imide content, rigid or flexible segment on the heat resistance, moisture absorption, dielectric performance, mechanical and bonding properties were systematically studied. The results show that PIS films maintain good heat resistance with Tg between 292 and 420°C and 5% weight loss temperature higher than 500°C. The moisture absorption and dielectric constant can be significantly reduced due to the presence of siloxanes and fluorinated groups, with the absorption rate as low as 1.2% and dielectric constant of 2.85 at 1 MHz. When measured at 10 GHz, the dielectric constant ranges from 3.10 to 3.50, and dielectric loss varies from 0.0059 to 0.0098. The PIS-6 film has the best comprehensive performance due to the low imide content, introduction of trifluoromethyl and ether bonds. The peeling strength of bonding PIS-6 film with a copper foil can reach 9.2 N/cm. It is proven that siloxane-containing PIS films with high heat resistance, low dielectric and outstanding adhesion are achieved, which can be applied for flexible integrated circuit boards, high-frequency electronics and microelectronics fields.","PeriodicalId":36855,"journal":{"name":"IET Nanodielectrics","volume":"7 1","pages":"33-45"},"PeriodicalIF":2.7,"publicationDate":"2023-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/nde2.12064","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139242785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

AI safety of film capacitors 薄膜电容器的 AI 安全性

IF 3.8

IET Nanodielectrics Pub Date : 2023-11-16 DOI: 10.1049/nde2.12071

Yong-Xin Zhang, Fang-Yi Chen, Di-Fan Liu, Jian-Xiao Wang, Qi-Kun Feng, Hai-Yang Jiang, Xin-Jie Wang, Hong-Bo Zhao, Shao-Long Zhong, Faisal Mehmood Shah, Zhi-Min Dang

引用次数: 0