2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO)最新文献_第10页

A better TID hardened Dopingless Lateral Bipolar Transitor on SiGe-OI design 基于SiGe-OI设计的更好的TID硬化无掺杂侧双极晶体管

2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2019-07-01 DOI: 10.1109/NANO46743.2019.8993919

L. B. Devi, Jitendra Kumar, A. Srivastava

引用次数: 0

Large-area, fully conformable, μm-thick e-tattoo for high-fidelity in situ personal health monitoring 大面积、全贴合、μm厚的电子纹身，用于高保真的现场个人健康监测

2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2019-07-01 DOI: 10.1109/NANO46743.2019.8993887

Lang Yin, Pengfei Deng, Jiaji Ma, Yaoxin Shen, Junhui Ren, Shuchang Zhang, Yongan Huang

引用次数: 1

A silk fibroin and ultra-long silver nanowires based transparent conductive composite film for nanosensor devices 一种用于纳米传感器器件的丝素和超长银纳米线透明导电复合薄膜

2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2019-07-01 DOI: 10.1109/NANO46743.2019.8993899

K. Cheng, Jinbo Chen, Tao Wang, Mei Liu, Xiangzheng Qin, Zhenzhong Wei, Yu Peng, Piaopiao Li, Ping Liu, Ning Cao, Junyi Huang, Jinjun Rao

引用次数: 5

Tamper Evidence of SEM Imaging Attack in Phase Change Memory Nanodevices 相变存储纳米器件中扫描电镜成像攻击的篡改证据

2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2019-07-01 DOI: 10.1109/NANO46743.2019.8993903

Nafisa Noor, R. S. Khan, Sadid Muneer, H. Silva

{"title":"Tamper Evidence of SEM Imaging Attack in Phase Change Memory Nanodevices","authors":"Nafisa Noor, R. S. Khan, Sadid Muneer, H. Silva","doi":"10.1109/NANO46743.2019.8993903","DOIUrl":"https://doi.org/10.1109/NANO46743.2019.8993903","url":null,"abstract":"Breach of security due to unauthorized access to electronic hardware devices or chips has recently become a serious concern for the internet-connected daily activities. Imaging with electron microscopy is one of the invasive techniques used to gain knowledge about a chip layout and extract secret information by the attackers. Automatic destruction or disturbance of the secret key during such invasive attacks are required to ensure protection against these attacks. We have characterized the disturbance caused to programmed phase change memory (PCM) cells by the imaging electron beam during scanning electron microscopy (SEM) in terms of the measured cell resistance. A sudden increase of resistance is observed on all imaged amorphous cells while the cells programmed to intermediate states show either abrupt increase or erratic decrease. These erratic disturbances of state are promising to mislead an attacker that is trying to acquire a stored key and leave indelible marks of tampering. Since PCM is recently being considered for implementation of various hardware security primitives, these beam-induced state change and tamper-evidence features enhance security of PCM devices against physical attacks.","PeriodicalId":365399,"journal":{"name":"2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122005127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

SPICE compact model of IGZO memristor based on non-quasi statically updated Schottky barrier height 基于非准静态更新肖特基势垒高度的IGZO忆阻器SPICE紧凑模型

2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2019-07-01 DOI: 10.1109/NANO46743.2019.8993957

J. Jang, Jungi Min, Donguk Kim, Jingyu Park, Sung-Jin Choi, D. M. Kim, Dae Hwan Kim

引用次数: 1

Prediction of Strain Effect on Hydrogen Evolution Reaction on VMO-SLMOS2* 应变对VMO-SLMOS2析氢反应影响的预测*

2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2019-07-01 DOI: 10.1109/NANO46743.2019.8993908

Lianfeng Lai, K. Ye, Minglin Li, Jing Luo, Bo Wu, Zhiying Ren

引用次数: 0

Exploiting Lithography Limits for Hardware Security Applications 利用光刻技术限制硬件安全应用

2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2019-07-01 DOI: 10.1109/NANO46743.2019.8993902

R. S. Khan, H. Silva, Nafisa Noor, Chenglu Jin, Sadid Muneer, F. Dirisaglik, A. Cywar, Phuong Ha Nguyen, M. Van Dijk, A. Gokirmak

引用次数: 2

Fabrication of Metallic Nano-Ring Arrays by Imprinting- Sputtering- Self Uplifting Methods with Localized Surface Plasmon Resonance Effect 基于局部表面等离子体共振效应的印迹-溅射-自提升方法制备金属纳米环阵列

2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2019-07-01 DOI: 10.1109/NANO46743.2019.8993873

P. Potejana

{"title":"Fabrication of Metallic Nano-Ring Arrays by Imprinting- Sputtering- Self Uplifting Methods with Localized Surface Plasmon Resonance Effect","authors":"P. Potejana","doi":"10.1109/NANO46743.2019.8993873","DOIUrl":"https://doi.org/10.1109/NANO46743.2019.8993873","url":null,"abstract":"This study proposed the efficient nanofabrication methods involve imprinting process with the non-hazardous chemical as well as Argon gas sputtering deposition process to fabricate metallic nanostructures on a substrate for optical sensing application. This manufacturing method is developing an efficient nanofabrication process of metallic nanostructures of the same size as the wavelength of visible light, such as a metallic nano-ring array on a quartz glass substrate. In this process, a polymer film mold is made by hot stamp method from a silicon wafer mother mold, and the polymer film mold is used to \"chemical imprint\" onto substrates. The polymer mold are very low cost and reusable. Then, a metal thin film is deposited on the stamped substrate by Argon gas spattering deposition. Finally, the nano-ring arrays are appeared on the substrate by a self-uplifting method using the vibration hot water dipping process. The optical properties of the nano-ring arrays are investigated. Most important advantages of this nanofabrication technology are \"high throughput, low cost, and without the hazardous chemical in the process\". Therefore, this new fabrication method is ready to transfer to the optical plasmonic bio-sensing application.","PeriodicalId":365399,"journal":{"name":"2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129569864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Resistance Drift and Crystallization in Suspended and On-oxide Phase Change Memory Line Cells 悬浮型和上氧化物型相变记忆线电池的电阻漂移和结晶

2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2019-07-01 DOI: 10.1109/NANO46743.2019.8993884

A. Gorbenko, A. Gokirmak, H. Silva, Nafisa Noor, Sadid Muneer, R. S. Khan, F. Dirisaglik, A. Cywar, Bicky Shakya, Domenic Forte, Marten van Dijk

{"title":"Resistance Drift and Crystallization in Suspended and On-oxide Phase Change Memory Line Cells","authors":"A. Gorbenko, A. Gokirmak, H. Silva, Nafisa Noor, Sadid Muneer, R. S. Khan, F. Dirisaglik, A. Cywar, Bicky Shakya, Domenic Forte, Marten van Dijk","doi":"10.1109/NANO46743.2019.8993884","DOIUrl":"https://doi.org/10.1109/NANO46743.2019.8993884","url":null,"abstract":"Resistance drift and crystallization are critical concerns for accurate distinction between different states and for data retention in phase change memory (PCM), but their underlying physical mechanisms are still not fully understood. In this work, we compared the resistance drift and crystallization of suspended and on-oxide amorphous Ge2Sb2Te5 PCM line cells. We programmed 15 cells of each type at room temperature to a resistance level of ~10 MΩ and monitored their resistance over ~3 months. The initial upward resistance drift trends were very similar for both cell types, but the later behaviour was noticeably different. The suspended cells exhibited increased variability in the upward drift after ~103 s, and at ~35-80 days some cells experienced an abrupt crystallization, some showed a saturation in the upward resistance drift, and others continued the upward resistance drift with fluctuations, possibly due to the imminent saturation. The on-oxide cells, on the other hand, demonstrated very consistent upward resistance drift during the entire measurement period. Temperature-accelerated measurements at 400 K on both type of cells also showed the early and abrupt data loss in suspended cells. The abrupt crystallization in suspended PCM cells can potentially be useful for self-destructive hardware security primitives based on the loss of the stored data after a certain time.","PeriodicalId":365399,"journal":{"name":"2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115253658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3