基于SiGe-OI设计的更好的TID硬化无掺杂侧双极晶体管

2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2019-07-01 DOI:10.1109/NANO46743.2019.8993919

L. B. Devi, Jitendra Kumar, A. Srivastava

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引用次数: 0

摘要

研究了总电离度(TID)对SiGe-OI上电荷等离子体诱导的无掺杂侧双极晶体管的影响。本文提出了一种新的TID强化电荷等离子体诱导无掺杂双极设计——SiGe-OI上的三侧电荷等离子体对称侧双极晶体管(SLBT)。通过我们提出的3SCP设计，我们能够证明与已经报道的带电等离子体无掺杂设计相比，TID对电流增益的影响是硬化的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A better TID hardened Dopingless Lateral Bipolar Transitor on SiGe-OI design

Impact of Total Ionization Doze (TID) on the charge plasma induced dopingless lateral bipolar transistor on SiGe-OI is studied. This paper proposes a new TID hardened charge plasma induced dopingless bipolar design – Triple Sided Charge Plasma (3SCP) Symmetric Lateral Bipolar Transistor (SLBT) on SiGe-OI. With our proposed 3SCP design we were able to show that the TID impact on the current gain is hardened as compared to the already reported charged plasma dopingless design.

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2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO)

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