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Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)最新文献

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Hydrogen Effects On Heteroepitaxial Growth Of Ge Films On Si 氢对Si上Ge薄膜异质外延生长的影响
Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) Pub Date : 1998-07-13 DOI: 10.1109/IMNC.1998.729936
H. Ikeda, A. Muto, M. Okada, I. Suzumura, S. Zaima, Y. Yasuda
{"title":"Hydrogen Effects On Heteroepitaxial Growth Of Ge Films On Si","authors":"H. Ikeda, A. Muto, M. Okada, I. Suzumura, S. Zaima, Y. Yasuda","doi":"10.1109/IMNC.1998.729936","DOIUrl":"https://doi.org/10.1109/IMNC.1998.729936","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131196437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of a Novel InAs Multiple Quantum Wire Transistor 一种新型InAs多量子线晶体管的制备
Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) Pub Date : 1998-07-13 DOI: 10.1109/IMNC.1998.730020
H. Yamamoto, T. Maemoto, M. Ichiu, S. Sasa, M. Inoue
{"title":"Fabrication of a Novel InAs Multiple Quantum Wire Transistor","authors":"H. Yamamoto, T. Maemoto, M. Ichiu, S. Sasa, M. Inoue","doi":"10.1109/IMNC.1998.730020","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730020","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125370901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sub-10-nm EB Lithography Using Poly(/spl alpha/-methylstyrene) Resist of Molecular Weight 650 分子量650的聚(/spl α /-甲基苯乙烯)抗蚀剂的亚10nm EB光刻技术
Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) Pub Date : 1998-07-13 DOI: 10.1109/IMNC.1998.730104
S. Manako, J. Fujita, K. Tanigaki, Y. Ochiai, E. Nomura
{"title":"Sub-10-nm EB Lithography Using Poly(/spl alpha/-methylstyrene) Resist of Molecular Weight 650","authors":"S. Manako, J. Fujita, K. Tanigaki, Y. Ochiai, E. Nomura","doi":"10.1109/IMNC.1998.730104","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730104","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"468 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114585620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
0.12 /spl mu/m Optical Lithography Performance Using an Alternating DUV Phase Shift Mask 使用交变DUV相移掩模的0.12 /spl mu/m光刻性能
Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) Pub Date : 1998-07-13 DOI: 10.1109/IMNC.1998.729976
Y. Trouiller, N. Buffet, T. Mourier, P. Schiavone, Y. Quéré
{"title":"0.12 /spl mu/m Optical Lithography Performance Using an Alternating DUV Phase Shift Mask","authors":"Y. Trouiller, N. Buffet, T. Mourier, P. Schiavone, Y. Quéré","doi":"10.1109/IMNC.1998.729976","DOIUrl":"https://doi.org/10.1109/IMNC.1998.729976","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124434866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Ring-Field EUV Exposure System Using Aspheric Mirrors 利用非球面反射镜的环场EUV曝光系统
Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) Pub Date : 1998-07-13 DOI: 10.1109/IMNC.1998.729974
K. Murakarni, T. Oshino, H. Kinoshita, T. Watanabe, M. Niibe, M. Itou, H. Oizumi, H. Yamanashi
{"title":"Ring-Field EUV Exposure System Using Aspheric Mirrors","authors":"K. Murakarni, T. Oshino, H. Kinoshita, T. Watanabe, M. Niibe, M. Itou, H. Oizumi, H. Yamanashi","doi":"10.1109/IMNC.1998.729974","DOIUrl":"https://doi.org/10.1109/IMNC.1998.729974","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"12 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123703558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Deposition And Patterning Technique For Realization Of PZT Thick Film Micro Actuator 实现PZT厚膜微驱动器的沉积和图像化技术
Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) Pub Date : 1998-07-13 DOI: 10.1109/IMNC.1998.730068
R. Maeda, J. Chu, A. Schroth, J. Akedo, M. Ichiki, Z. Wang, S. Yonekubo
{"title":"Deposition And Patterning Technique For Realization Of PZT Thick Film Micro Actuator","authors":"R. Maeda, J. Chu, A. Schroth, J. Akedo, M. Ichiki, Z. Wang, S. Yonekubo","doi":"10.1109/IMNC.1998.730068","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730068","url":null,"abstract":"Introduction: Deposition technology of thin PZT layer has reached an advanced state in the application area of memory fabrication. On the other hand, the application of PZT layer for actuation of micro electromechanical system (MEMS) is not well established. Relatively thicker film is necessary in this application. Conventional preparation techniques provide poor deposition rates and the accumulated residual stress during deposition results in peal off of the deposited layered structure. Another difficulty lies in the low etching rate of the multilayered structure of Si02/Ti/Pt/PZT/Ti/Pt.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129115031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Boron-Implantation on the Strain-Relaxation of Pseudomorphic Metastable Ge/sub 0.06/Si/sub 0.94/ Alloy Layers 硼注入对伪晶亚稳态Ge/sub 0.06/Si/sub 0.94合金层应变弛豫的影响
Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) Pub Date : 1998-07-13 DOI: 10.1109/IMNC.1998.730044
M. Oh, S. Im, H.B. Kim, J. Song
{"title":"Effect of Boron-Implantation on the Strain-Relaxation of Pseudomorphic Metastable Ge/sub 0.06/Si/sub 0.94/ Alloy Layers","authors":"M. Oh, S. Im, H.B. Kim, J. Song","doi":"10.1109/IMNC.1998.730044","DOIUrl":"https://doi.org/10.1109/IMNC.1998.730044","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124538656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication Of Self-Assembled GaAs/AIGaAs Quantum Dots By Low-Temperature Droplet Epitaxy 低温液滴外延法制备自组装GaAs/AIGaAs量子点
Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) Pub Date : 1998-07-13 DOI: 10.1143/JJAP.37.7158
Chae-Deok Lee, Chanro Park, Hwack-Joo Lee, S. Park, Kyu‐Seok Lee, C. Park, S. Noh, N. Koguchi
{"title":"Fabrication Of Self-Assembled GaAs/AIGaAs Quantum Dots By Low-Temperature Droplet Epitaxy","authors":"Chae-Deok Lee, Chanro Park, Hwack-Joo Lee, S. Park, Kyu‐Seok Lee, C. Park, S. Noh, N. Koguchi","doi":"10.1143/JJAP.37.7158","DOIUrl":"https://doi.org/10.1143/JJAP.37.7158","url":null,"abstract":"The fabrication of nanometer-scale GaAs dots on AlGaAs layer by molecular beam epitaxy was demonstrated. Unlike the stress-driven transition of the three-dimensional growth mode in the lattice-mismatched system, the limited migration of Ga droplets on the AlGaAs layer grown at low substrate temperature was exploited to give rise to the formation of three-dimensional GaAs islands. The resulting GaAs dots show crater-like features having {111} facets. In micro-photoluminescence measurements of the buried structures, the emission spectra were clearly observed, and the sharp lines of the spectra might be considered as the exciton emissions from individual dots with various sizes.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122476223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Lithography CAD Technology For Embedded Memory In Logic 嵌入式逻辑存储器的光刻CAD技术
Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) Pub Date : 1998-07-13 DOI: 10.1109/IMNC.1998.729963
H. Ohnuma, K. Tsudaka, H. Kawahira, S. Nozawa
{"title":"Lithography CAD Technology For Embedded Memory In Logic","authors":"H. Ohnuma, K. Tsudaka, H. Kawahira, S. Nozawa","doi":"10.1109/IMNC.1998.729963","DOIUrl":"https://doi.org/10.1109/IMNC.1998.729963","url":null,"abstract":"","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126609042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Voltage Modulation Scanned Probe Oxidation 电压调制扫描探针氧化
Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) Pub Date : 1998-07-13 DOI: 10.1063/1.124318
J. Dagata, T. Inoue, J. Itoh, K. Matsumoto, H. Yokoyama
{"title":"Voltage Modulation Scanned Probe Oxidation","authors":"J. Dagata, T. Inoue, J. Itoh, K. Matsumoto, H. Yokoyama","doi":"10.1063/1.124318","DOIUrl":"https://doi.org/10.1063/1.124318","url":null,"abstract":"Scanned probe microscope (SPM) oxidation with voltage modulation leads to a significant enhancement of the oxide growth rate, improvement of the aspect ratio of oxide features, and control of the structural and electrical properties of the SPM oxide. Variation of the voltage-pulse parameters confirms that the oxide dimensions can be controlled sensitively over a wide range of pulse parameters and that voltage modulation overcomes the self-limiting character of SPM oxidation by reducing the buildup of space charge within the oxide during growth. The enhancement can be used to increase the writing speed or lower the voltage, both beneficial for practical nanoelectronics fabrication.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131713208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 74
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