电压调制扫描探针氧化

J. Dagata, T. Inoue, J. Itoh, K. Matsumoto, H. Yokoyama
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引用次数: 74

摘要

电压调制扫描探针显微镜(SPM)氧化可以显著提高氧化物的生长速度,改善氧化物特征的长径比,并控制SPM氧化物的结构和电学性能。电压脉冲参数的变化证实了氧化物的尺寸可以在很宽的脉冲参数范围内进行灵敏的控制,电压调制通过减少生长过程中氧化物内部空间电荷的积累来克服SPM氧化的自限性。这种增强可以用来提高写入速度或降低电压,这对实际的纳米电子制造都是有益的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Voltage Modulation Scanned Probe Oxidation
Scanned probe microscope (SPM) oxidation with voltage modulation leads to a significant enhancement of the oxide growth rate, improvement of the aspect ratio of oxide features, and control of the structural and electrical properties of the SPM oxide. Variation of the voltage-pulse parameters confirms that the oxide dimensions can be controlled sensitively over a wide range of pulse parameters and that voltage modulation overcomes the self-limiting character of SPM oxidation by reducing the buildup of space charge within the oxide during growth. The enhancement can be used to increase the writing speed or lower the voltage, both beneficial for practical nanoelectronics fabrication.
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