发布求助
文献互助 智能选刊 最新文献

Recent Advances in PMOS Negative Bias Temperature Instability最新文献

筛选
英文 中文
BAT Framework Modeling of RMG HKMG GAA-SNS FETs
Recent Advances in PMOS Negative Bias Temperature Instability Pub Date : 2021-11-26 DOI: 10.1007/978-981-16-6120-4_12
N. Choudhury, Tarun Samadder, R. Southwick, Huimei Zhou, Miaomiao Wang, Souvik Mahapatra
{"title":"BAT Framework Modeling of RMG HKMG GAA-SNS FETs","authors":"N. Choudhury, Tarun Samadder, R. Southwick, Huimei Zhou, Miaomiao Wang, Souvik Mahapatra","doi":"10.1007/978-981-16-6120-4_12","DOIUrl":"https://doi.org/10.1007/978-981-16-6120-4_12","url":null,"abstract":"","PeriodicalId":356407,"journal":{"name":"Recent Advances in PMOS Negative Bias Temperature Instability","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115043247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
BAT Framework Modeling of AC NBTI: Stress Mode, Duty Cycle and Frequency 交流NBTI的BAT框架建模:应力模态、占空比和频率
Recent Advances in PMOS Negative Bias Temperature Instability Pub Date : 2021-11-26 DOI: 10.1007/978-981-16-6120-4_14
S. Mahapatra, N. Parihar, N. Goel, N. Choudhury, Tarun Samadder, Uma Sharma
{"title":"BAT Framework Modeling of AC NBTI: Stress Mode, Duty Cycle and Frequency","authors":"S. Mahapatra, N. Parihar, N. Goel, N. Choudhury, Tarun Samadder, Uma Sharma","doi":"10.1007/978-981-16-6120-4_14","DOIUrl":"https://doi.org/10.1007/978-981-16-6120-4_14","url":null,"abstract":"","PeriodicalId":356407,"journal":{"name":"Recent Advances in PMOS Negative Bias Temperature Instability","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126510281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
BAT Framework Modeling of Gate First HKMG Si Channel MOSFETs 栅极优先HKMG硅沟道mosfet的BAT框架建模
Recent Advances in PMOS Negative Bias Temperature Instability Pub Date : 2021-11-26 DOI: 10.1007/978-981-16-6120-4_7
S. Mahapatra, N. Parihar, N. Goel, N. Choudhury, Tarun Samadder
{"title":"BAT Framework Modeling of Gate First HKMG Si Channel MOSFETs","authors":"S. Mahapatra, N. Parihar, N. Goel, N. Choudhury, Tarun Samadder","doi":"10.1007/978-981-16-6120-4_7","DOIUrl":"https://doi.org/10.1007/978-981-16-6120-4_7","url":null,"abstract":"","PeriodicalId":356407,"journal":{"name":"Recent Advances in PMOS Negative Bias Temperature Instability","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114258850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
BTI Analysis Tool (BAT) Model Framework—Interface Trap Occupancy and Hole Trapping BTI分析工具(BAT)模型框架-接口陷阱占用和漏洞陷阱
Recent Advances in PMOS Negative Bias Temperature Instability Pub Date : 2021-11-26 DOI: 10.1007/978-981-16-6120-4_5
S. Mahapatra, N. Parihar, N. Choudhury, N. Goel
{"title":"BTI Analysis Tool (BAT) Model Framework—Interface Trap Occupancy and Hole Trapping","authors":"S. Mahapatra, N. Parihar, N. Choudhury, N. Goel","doi":"10.1007/978-981-16-6120-4_5","DOIUrl":"https://doi.org/10.1007/978-981-16-6120-4_5","url":null,"abstract":"","PeriodicalId":356407,"journal":{"name":"Recent Advances in PMOS Negative Bias Temperature Instability","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125535395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
BAT Framework Modeling of Dimension Scaling in FinFETs and GAA-SNS FETs finfet和GAA-SNS fet尺寸缩放的BAT框架建模
Recent Advances in PMOS Negative Bias Temperature Instability Pub Date : 2021-11-26 DOI: 10.1007/978-981-16-6120-4_13
Souvik Mahapatra, N. Parihar, N. Choudhury, R. Tiwari, Tarun Samadder
{"title":"BAT Framework Modeling of Dimension Scaling in FinFETs and GAA-SNS FETs","authors":"Souvik Mahapatra, N. Parihar, N. Choudhury, R. Tiwari, Tarun Samadder","doi":"10.1007/978-981-16-6120-4_13","DOIUrl":"https://doi.org/10.1007/978-981-16-6120-4_13","url":null,"abstract":"","PeriodicalId":356407,"journal":{"name":"Recent Advances in PMOS Negative Bias Temperature Instability","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122369630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
BTI Analysis Tool (BAT) Model Framework—Generation of Bulk Traps BTI分析工具(BAT)模型框架-批量陷阱生成
Recent Advances in PMOS Negative Bias Temperature Instability Pub Date : 2021-11-26 DOI: 10.1007/978-981-16-6120-4_6
S. Mahapatra, N. Parihar, Tarun Samadder, N. Choudhury, Akshay Raj
{"title":"BTI Analysis Tool (BAT) Model Framework—Generation of Bulk Traps","authors":"S. Mahapatra, N. Parihar, Tarun Samadder, N. Choudhury, Akshay Raj","doi":"10.1007/978-981-16-6120-4_6","DOIUrl":"https://doi.org/10.1007/978-981-16-6120-4_6","url":null,"abstract":"","PeriodicalId":356407,"journal":{"name":"Recent Advances in PMOS Negative Bias Temperature Instability","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128792870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
BAT Framework Modeling of Gate First HKMG Si-Capped SiGe Channel MOSFETs 栅极第一HKMG硅帽SiGe沟道mosfet的BAT框架建模
Recent Advances in PMOS Negative Bias Temperature Instability Pub Date : 2021-11-26 DOI: 10.1007/978-981-16-6120-4_8
N. Parihar, Tarun Samadder, S. Mahapatra
{"title":"BAT Framework Modeling of Gate First HKMG Si-Capped SiGe Channel MOSFETs","authors":"N. Parihar, Tarun Samadder, S. Mahapatra","doi":"10.1007/978-981-16-6120-4_8","DOIUrl":"https://doi.org/10.1007/978-981-16-6120-4_8","url":null,"abstract":"","PeriodicalId":356407,"journal":{"name":"Recent Advances in PMOS Negative Bias Temperature Instability","volume":"90 8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128310256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
BTI Analysis Tool (BAT) Model Framework—Generation of Interface Traps BTI分析工具(BAT)模型框架-生成接口陷阱
Recent Advances in PMOS Negative Bias Temperature Instability Pub Date : 2021-11-26 DOI: 10.1007/978-981-16-6120-4_4
S. Mahapatra, N. Parihar, S. Mukhopadhyay, N. Goel
{"title":"BTI Analysis Tool (BAT) Model Framework—Generation of Interface Traps","authors":"S. Mahapatra, N. Parihar, S. Mukhopadhyay, N. Goel","doi":"10.1007/978-981-16-6120-4_4","DOIUrl":"https://doi.org/10.1007/978-981-16-6120-4_4","url":null,"abstract":"","PeriodicalId":356407,"journal":{"name":"Recent Advances in PMOS Negative Bias Temperature Instability","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126922385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
BAT Framework Modeling of RMG HKMG SOI FinFETs RMG HKMG SOI FinFETs的BAT框架建模
Recent Advances in PMOS Negative Bias Temperature Instability Pub Date : 2021-11-26 DOI: 10.1007/978-981-16-6120-4_10
N. Parihar, N. Choudhury, Tarun Samadder, Uma Sharma, R. Southwick, Miaomiao Wang, J. Stathis, Souvik Mahapatra
{"title":"BAT Framework Modeling of RMG HKMG SOI FinFETs","authors":"N. Parihar, N. Choudhury, Tarun Samadder, Uma Sharma, R. Southwick, Miaomiao Wang, J. Stathis, Souvik Mahapatra","doi":"10.1007/978-981-16-6120-4_10","DOIUrl":"https://doi.org/10.1007/978-981-16-6120-4_10","url":null,"abstract":"","PeriodicalId":356407,"journal":{"name":"Recent Advances in PMOS Negative Bias Temperature Instability","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115010004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
BAT Framework Modeling of RMG HKMG Si and SiGe Channel FinFETs RMG HKMG Si和SiGe通道finfet的BAT框架建模
Recent Advances in PMOS Negative Bias Temperature Instability Pub Date : 2021-11-26 DOI: 10.1007/978-981-16-6120-4_11
N. Parihar, N. Choudhury, Tarun Samadder, R. Southwick, Miaomiao Wang, J. Stathis, Souvik Mahapatra
{"title":"BAT Framework Modeling of RMG HKMG Si and SiGe Channel FinFETs","authors":"N. Parihar, N. Choudhury, Tarun Samadder, R. Southwick, Miaomiao Wang, J. Stathis, Souvik Mahapatra","doi":"10.1007/978-981-16-6120-4_11","DOIUrl":"https://doi.org/10.1007/978-981-16-6120-4_11","url":null,"abstract":"","PeriodicalId":356407,"journal":{"name":"Recent Advances in PMOS Negative Bias Temperature Instability","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121177278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信