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BAT Framework Modeling of Gate First HKMG Si Channel MOSFETs

Recent Advances in PMOS Negative Bias Temperature Instability Pub Date : 2021-11-26 DOI:10.1007/978-981-16-6120-4_7
S. Mahapatra, N. Parihar, N. Goel, N. Choudhury, Tarun Samadder
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栅极优先HKMG硅沟道mosfet的BAT框架建模
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Recent Advances in PMOS Negative Bias Temperature Instability
Recent Advances in PMOS Negative Bias Temperature Instability
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