2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems最新文献

筛选
英文 中文
A Tunable RF MEMS Transformer on Silicon 硅基可调谐射频MEMS变压器
2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2007-03-05 DOI: 10.1109/SMIC.2007.322788
S. Chang, S. Sivoththaman
{"title":"A Tunable RF MEMS Transformer on Silicon","authors":"S. Chang, S. Sivoththaman","doi":"10.1109/SMIC.2007.322788","DOIUrl":"https://doi.org/10.1109/SMIC.2007.322788","url":null,"abstract":"The authors present a tunable RF MEMS transformer fabricated on silicon based on the bimorph effect of two materials. The suspended coil is composed of an amorphous silicon and aluminum bilayer and due to the stress developed in the layers, outer turns reach hundreds of microns of vertical displacement. The mutual coupling of the transformer is tuned by applying a DC voltage to control the distance between the windings. By applying an actuation voltage of 1.25 V, the mutual inductance can be tuned by 24%. This device is fabricated in a sub-150degC process opening up the possibility of post-CMOS integration of RF MEMS devices on silicon","PeriodicalId":354197,"journal":{"name":"2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125170827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A Concurrent Dual-Band VCO with Dual Resonance in Single Resonator 单腔双共振并发双频压控振荡器
2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2007-03-05 DOI: 10.1109/SMIC.2007.322799
Ja-yol Lee, Sang-Heung Lee, Hyun-Cheol Bae, Sanghoon Kim
{"title":"A Concurrent Dual-Band VCO with Dual Resonance in Single Resonator","authors":"Ja-yol Lee, Sang-Heung Lee, Hyun-Cheol Bae, Sanghoon Kim","doi":"10.1109/SMIC.2007.322799","DOIUrl":"https://doi.org/10.1109/SMIC.2007.322799","url":null,"abstract":"In this paper, we present a new concurrent dual-band VCO with single resonator. The proposed oscillator is a new concurrent dual-band VCO, which does generate two bands of carrier frequencies simultaneously. One band is generated from 5.1 GHz to 5.5 GHz, and the other is from 8.5 GHz to 9.1 GHz. Low phase noises at 100 kHz offset are measured as -111 dBc/Hz from 8.86 GHz and -114 dBc/Hz from 5.132 GHz, respectively. The concurrent dual-band VCO consumes a core current of 4 mA at 4.0 V. The VCO has been fabricated using 0.8mum SiGe BiCMOS process","PeriodicalId":354197,"journal":{"name":"2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126084615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Small-Area CMOS RF Distributed Mixer Using Multi-Port Inductors 采用多端口电感器的小面积CMOS射频分布式混频器
2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2007-03-05 DOI: 10.1109/ASPDAC.2008.4483916
S. Sadoshima, S. Fukuda, T. Yammouch, Hiroyuki Ito, K. Okada, K. Masu
{"title":"Small-Area CMOS RF Distributed Mixer Using Multi-Port Inductors","authors":"S. Sadoshima, S. Fukuda, T. Yammouch, Hiroyuki Ito, K. Okada, K. Masu","doi":"10.1109/ASPDAC.2008.4483916","DOIUrl":"https://doi.org/10.1109/ASPDAC.2008.4483916","url":null,"abstract":"This paper presents a novel small-area distributed mixer for ultrawide-band (UWB) receivers. The proposed mixer uses five 4-port inductors instead of fifteen 2-port inductors to shrink area of the circuit. The proposed mixer achieves conversion gain of -10 dB, noise figure of 15 dB, return loss of less than -10 dB from 2.3 to 6.0 GHz, IIP3 of 13.6 dBm, and the circuit area of 0.51 mm2","PeriodicalId":354197,"journal":{"name":"2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128459216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A 5.8mW Fully Integrated 1.5GHz Synthesizer in 0.13-μm CMOS 基于0.13 μm CMOS的5.8mW全集成1.5GHz合成器
2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2007-03-05 DOI: 10.1109/SMIC.2007.322797
V. Karam, J. Rogers
{"title":"A 5.8mW Fully Integrated 1.5GHz Synthesizer in 0.13-μm CMOS","authors":"V. Karam, J. Rogers","doi":"10.1109/SMIC.2007.322797","DOIUrl":"https://doi.org/10.1109/SMIC.2007.322797","url":null,"abstract":"This paper describes the design of a low power 1.5GHz fully integrated PLL based frequency synthesizer. The synthesizer includes a conventional tri-state phase frequency detector, a fully differential charge pump, a 2nd-order on-chip loop filter, a voltage-controlled ring oscillator and a programmable divider. The synthesizer is implemented in a 0.13μm CMOS process, consumes 5.8mW of power at a supply voltage of 1.2V, has a phase noise of -82dBc/Hz at 1MHz offset, and has reference spurs lower than -47dBc. The entire synthesizer is designed using current mode logic and occupies an area of 0.34mm2.","PeriodicalId":354197,"journal":{"name":"2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"385 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126972259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Multi-Radio Platforms in Scaled CMOS Technology 基于CMOS技术的多无线电平台
2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2007-03-05 DOI: 10.1109/SMIC.2007.322793
S. S. Taylor, A. Waltho
{"title":"Multi-Radio Platforms in Scaled CMOS Technology","authors":"S. S. Taylor, A. Waltho","doi":"10.1109/SMIC.2007.322793","DOIUrl":"https://doi.org/10.1109/SMIC.2007.322793","url":null,"abstract":"Notebook computers and handheld devices employ multi-radio platforms to stay connected anywhere, anytime. This presents many challenges in terms of economics and coexistence. This paper reviews some of these challenges, and describes how CMOS technology can be used to implement low-cost radio platforms","PeriodicalId":354197,"journal":{"name":"2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129102153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
High Power Applications of RF-MEMS RF-MEMS的大功率应用
2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2007-03-05 DOI: 10.1109/SMIC.2007.322785
P. Blondy, C. Palego, A. Pothier, A. Crunteanu, T. Gasseling, C. Champeaux, A. Catherinot, P. Tristant
{"title":"High Power Applications of RF-MEMS","authors":"P. Blondy, C. Palego, A. Pothier, A. Crunteanu, T. Gasseling, C. Champeaux, A. Catherinot, P. Tristant","doi":"10.1109/SMIC.2007.322785","DOIUrl":"https://doi.org/10.1109/SMIC.2007.322785","url":null,"abstract":"This paper presents recent results on the development of high power MEMS switched varactors. Design methodology as well as fabrication and measurement results are presented. The MEMS varactors are made of a thick metal gold cantilever, with a reduced contact area, that allows to control high power microwave signals. Operation up to 5 watts CW is demonstrated, with good reliability. First results on applications to phase shifters is presented","PeriodicalId":354197,"journal":{"name":"2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129183274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Cost Effective Parallel-branch Spiral Inductor with Enhanced Quality Factor and Resonance Frequency 具有高质量因数和共振频率的高性价比并联分支螺旋电感
2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2007-03-05 DOI: 10.1109/SMIC.2007.322776
Hyun-Cheol Bae, Sanghoon Kim, Ja-yol Lee, Jin-Young Kang, Sang-Heung Lee, Hyun-Kyu Yu
{"title":"Cost Effective Parallel-branch Spiral Inductor with Enhanced Quality Factor and Resonance Frequency","authors":"Hyun-Cheol Bae, Sanghoon Kim, Ja-yol Lee, Jin-Young Kang, Sang-Heung Lee, Hyun-Kyu Yu","doi":"10.1109/SMIC.2007.322776","DOIUrl":"https://doi.org/10.1109/SMIC.2007.322776","url":null,"abstract":"In this paper, we present a cost effective parallel-branch spiral inductor with enhanced quality factor and resonance frequency. This structure is designed to improve the quality factor, but different from other fully stacked spiral inductors. The parallel-branch effect is increased by overlapping the first metal below the second metal with same direction. Measurement result shows an increased quality factor of 12% improvement. Also, we show an octagonal parallel-branch inductor which reduces parasitic capacitances for higher frequency applications","PeriodicalId":354197,"journal":{"name":"2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131959530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
An Integrated 50-GHz SiGe Sub-Harmonic Mixer/Downconverter with a Quadrature Ring VCO 带正交环压控振荡器的集成50 ghz SiGe次谐波混频器/下变频器
2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2007-03-05 DOI: 10.1109/SMIC.2007.322825
R. Kodkani, L. Larson
{"title":"An Integrated 50-GHz SiGe Sub-Harmonic Mixer/Downconverter with a Quadrature Ring VCO","authors":"R. Kodkani, L. Larson","doi":"10.1109/SMIC.2007.322825","DOIUrl":"https://doi.org/10.1109/SMIC.2007.322825","url":null,"abstract":"A 50 GHz sub-harmonic mixer based on multiple LO phases integrated with a 24 GHz quadrature ring VCO is fabricated in a 0.12mum SiGe BiCMOS process. The mixer core consumes 7 mA from a 3.3V supply. The mixer has a conversion gain of 9 dB and an SSB noise figure of 11.8 dB","PeriodicalId":354197,"journal":{"name":"2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"147 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132602523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
High Quality Passive Devices Fabricated Inexpensively in Advanced RF-CMOS Technologies with Copper BEOL 采用先进RF-CMOS技术制备低成本高质量无源器件
2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2007-03-05 DOI: 10.1109/SMIC.2007.322791
Z. He, M. Erturk, H. Ding, Matthew D. Moon, E. Gordon, D. Daley, A. Stamper, D. Coolbaugh, E. Eshun, M. Gordon, A. Joseph, S. St. Onge, J. Dunn
{"title":"High Quality Passive Devices Fabricated Inexpensively in Advanced RF-CMOS Technologies with Copper BEOL","authors":"Z. He, M. Erturk, H. Ding, Matthew D. Moon, E. Gordon, D. Daley, A. Stamper, D. Coolbaugh, E. Eshun, M. Gordon, A. Joseph, S. St. Onge, J. Dunn","doi":"10.1109/SMIC.2007.322791","DOIUrl":"https://doi.org/10.1109/SMIC.2007.322791","url":null,"abstract":"High quality factor inductors and highly matched low capacitance density horizontal parallel plate metal-insulator-metal capacitors were fabricated in 130nm RF-CMOS technology with minimal or zero processing step addition. The high quality factor inductors were made using a novel triple damascene integration technique. Peak quality factor of 26 was demonstrated for a 0.3nH inductor. The low capacitance density MIM capacitors were fabricated using standard BEOL copper planes with zero addition of processing steps. Capacitance density value of 0.66 fF/mum 2 was achieved for a six level copper wiring BEOL. Impact of copper plane was characterized to ensure optimal manufacturing production","PeriodicalId":354197,"journal":{"name":"2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131151122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ground-Semiconductor-Ground Guiding Phenomena of Noise Coupling in CMOS Substrate CMOS衬底中噪声耦合的地-半导体-地引导现象
2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2007-03-05 DOI: 10.1109/SMIC.2007.322775
Hsien-Hung Wu, Ching-Kuang C. Tzuang
{"title":"Ground-Semiconductor-Ground Guiding Phenomena of Noise Coupling in CMOS Substrate","authors":"Hsien-Hung Wu, Ching-Kuang C. Tzuang","doi":"10.1109/SMIC.2007.322775","DOIUrl":"https://doi.org/10.1109/SMIC.2007.322775","url":null,"abstract":"Ground-semiconductor-ground (GSG) transmission line (TL) is proposed and investigated thoroughly for the assessment of CMOS signal integrity problem at multi-GHz frequency regime. The GSG TL models the practical implementation of CMOS logic layout, which consists of power line, Nwell line (semiconductor), Pwell line (semiconductor), and ground line. Rigorous field-theory analyses and experiments show that GSG TL supports the CPW (coplanar waveguide) mode for the particular case study, which also demonstrate the slow-wave factor can be as high as 50 at 1 GHz and decrease to 10 at 10 GHz, pointing to the fact that the slow-wave phenomena will be more pronounced for CMOS electronics operated beyond tens of GHz","PeriodicalId":354197,"journal":{"name":"2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114898384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信