A Tunable RF MEMS Transformer on Silicon

S. Chang, S. Sivoththaman
{"title":"A Tunable RF MEMS Transformer on Silicon","authors":"S. Chang, S. Sivoththaman","doi":"10.1109/SMIC.2007.322788","DOIUrl":null,"url":null,"abstract":"The authors present a tunable RF MEMS transformer fabricated on silicon based on the bimorph effect of two materials. The suspended coil is composed of an amorphous silicon and aluminum bilayer and due to the stress developed in the layers, outer turns reach hundreds of microns of vertical displacement. The mutual coupling of the transformer is tuned by applying a DC voltage to control the distance between the windings. By applying an actuation voltage of 1.25 V, the mutual inductance can be tuned by 24%. This device is fabricated in a sub-150degC process opening up the possibility of post-CMOS integration of RF MEMS devices on silicon","PeriodicalId":354197,"journal":{"name":"2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2007.322788","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

The authors present a tunable RF MEMS transformer fabricated on silicon based on the bimorph effect of two materials. The suspended coil is composed of an amorphous silicon and aluminum bilayer and due to the stress developed in the layers, outer turns reach hundreds of microns of vertical displacement. The mutual coupling of the transformer is tuned by applying a DC voltage to control the distance between the windings. By applying an actuation voltage of 1.25 V, the mutual inductance can be tuned by 24%. This device is fabricated in a sub-150degC process opening up the possibility of post-CMOS integration of RF MEMS devices on silicon
硅基可调谐射频MEMS变压器
基于两种材料的双晶型效应,提出了一种可调谐的硅基射频MEMS变压器。悬浮线圈由非晶硅和铝双分子层组成,由于层内产生的应力,外匝可达到数百微米的垂直位移。变压器的相互耦合是通过施加直流电压来控制绕组之间的距离来调节的。通过施加1.25 V的驱动电压,互感可调谐24%。该器件是在低于150摄氏度的工艺中制造的,开辟了在后cmos集成RF MEMS器件在硅上的可能性
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