单腔双共振并发双频压控振荡器

2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2007-03-05 DOI:10.1109/SMIC.2007.322799

Ja-yol Lee, Sang-Heung Lee, Hyun-Cheol Bae, Sanghoon Kim

{"title":"单腔双共振并发双频压控振荡器","authors":"Ja-yol Lee, Sang-Heung Lee, Hyun-Cheol Bae, Sanghoon Kim","doi":"10.1109/SMIC.2007.322799","DOIUrl":null,"url":null,"abstract":"In this paper, we present a new concurrent dual-band VCO with single resonator. The proposed oscillator is a new concurrent dual-band VCO, which does generate two bands of carrier frequencies simultaneously. One band is generated from 5.1 GHz to 5.5 GHz, and the other is from 8.5 GHz to 9.1 GHz. Low phase noises at 100 kHz offset are measured as -111 dBc/Hz from 8.86 GHz and -114 dBc/Hz from 5.132 GHz, respectively. The concurrent dual-band VCO consumes a core current of 4 mA at 4.0 V. The VCO has been fabricated using 0.8mum SiGe BiCMOS process","PeriodicalId":354197,"journal":{"name":"2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A Concurrent Dual-Band VCO with Dual Resonance in Single Resonator\",\"authors\":\"Ja-yol Lee, Sang-Heung Lee, Hyun-Cheol Bae, Sanghoon Kim\",\"doi\":\"10.1109/SMIC.2007.322799\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we present a new concurrent dual-band VCO with single resonator. The proposed oscillator is a new concurrent dual-band VCO, which does generate two bands of carrier frequencies simultaneously. One band is generated from 5.1 GHz to 5.5 GHz, and the other is from 8.5 GHz to 9.1 GHz. Low phase noises at 100 kHz offset are measured as -111 dBc/Hz from 8.86 GHz and -114 dBc/Hz from 5.132 GHz, respectively. The concurrent dual-band VCO consumes a core current of 4 mA at 4.0 V. The VCO has been fabricated using 0.8mum SiGe BiCMOS process\",\"PeriodicalId\":354197,\"journal\":{\"name\":\"2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-03-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMIC.2007.322799\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2007.322799","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

本文提出了一种新型的单腔双频并发压控振荡器。该振荡器是一种新型的并发双频压控振荡器，可以同时产生两个频带的载波频率。一个频段产生于5.1 GHz ~ 5.5 GHz，另一个频段产生于8.5 GHz ~ 9.1 GHz。在8.86 GHz和5.132 GHz测量到的100khz偏置低相位噪声分别为-111 dBc/Hz和-114 dBc/Hz。并发双频VCO在4.0 V时消耗4ma的核心电流。采用0.8 μ SiGe BiCMOS工艺制备了VCO

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A Concurrent Dual-Band VCO with Dual Resonance in Single Resonator

In this paper, we present a new concurrent dual-band VCO with single resonator. The proposed oscillator is a new concurrent dual-band VCO, which does generate two bands of carrier frequencies simultaneously. One band is generated from 5.1 GHz to 5.5 GHz, and the other is from 8.5 GHz to 9.1 GHz. Low phase noises at 100 kHz offset are measured as -111 dBc/Hz from 8.86 GHz and -114 dBc/Hz from 5.132 GHz, respectively. The concurrent dual-band VCO consumes a core current of 4 mA at 4.0 V. The VCO has been fabricated using 0.8mum SiGe BiCMOS process

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

自引率

0.00%

发文量