Small-Area CMOS RF Distributed Mixer Using Multi-Port Inductors

S. Sadoshima, S. Fukuda, T. Yammouch, Hiroyuki Ito, K. Okada, K. Masu
{"title":"Small-Area CMOS RF Distributed Mixer Using Multi-Port Inductors","authors":"S. Sadoshima, S. Fukuda, T. Yammouch, Hiroyuki Ito, K. Okada, K. Masu","doi":"10.1109/ASPDAC.2008.4483916","DOIUrl":null,"url":null,"abstract":"This paper presents a novel small-area distributed mixer for ultrawide-band (UWB) receivers. The proposed mixer uses five 4-port inductors instead of fifteen 2-port inductors to shrink area of the circuit. The proposed mixer achieves conversion gain of -10 dB, noise figure of 15 dB, return loss of less than -10 dB from 2.3 to 6.0 GHz, IIP3 of 13.6 dBm, and the circuit area of 0.51 mm2","PeriodicalId":354197,"journal":{"name":"2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASPDAC.2008.4483916","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

This paper presents a novel small-area distributed mixer for ultrawide-band (UWB) receivers. The proposed mixer uses five 4-port inductors instead of fifteen 2-port inductors to shrink area of the circuit. The proposed mixer achieves conversion gain of -10 dB, noise figure of 15 dB, return loss of less than -10 dB from 2.3 to 6.0 GHz, IIP3 of 13.6 dBm, and the circuit area of 0.51 mm2
采用多端口电感器的小面积CMOS射频分布式混频器
提出了一种新型的小面积分布式超宽带(UWB)接收机混频器。提出的混频器使用5个4端口电感器而不是15个2端口电感器来缩小电路的面积。该混频器的转换增益为-10 dB,噪声系数为15 dB,在2.3 ~ 6.0 GHz范围内回波损耗小于-10 dB, IIP3为13.6 dBm,电路面积为0.51 mm2
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信