Crystal Growth & Design最新文献

{"title":"Development of a Dual-State Emissive Naphthalimide-Based Organic Probe: Interesting Synergistic Effects from the Solid State to the Solution Phase","authors":"Aditi Garg, Umesh R. Pratap, Abhishek Banerjee, Sujit Kumar Ghosh","doi":"10.1021/acs.cgd.4c00867","DOIUrl":"https://doi.org/10.1021/acs.cgd.4c00867","url":null,"abstract":"Luminescent compounds have garnered significant interest for their wide range of applications in light harvesting, cell imagining, LASERs, light-emitting diodes, etc. Conventional luminescent organic molecules show their emissive properties in the solution phase; however, in the solid state, a quenching of the fluorescence intensity occurs. Researchers have been able to overcome such challenges using the phenomenon of aggregation-induced emission (AIE), which enhances the solid-state emissive properties through close packing aided by nonbonded interactions. Such molecules, conventionally referred to as AIE luminogens, are observed to show phase-exclusive emissive properties, i.e., emissive in the solid state but nonemissive in the solution phase. Such drawbacks have prompted us to investigate molecules having emissive properties in both solution and solid phase, viz., dual-state emissive molecules [dual-state emission (DSE) luminogens]. Among these, naphthalimides, owing to their versatile conformational arrangements, are of prime interest. In this article, we present the design, synthesis, structural characterization, and detailed spectroscopic studies of a naphthalimide-based luminogen molecule, 6-(4-(2-hydroxyethyl)piperazin-1-yl)-2-(6-methoxybenzothiazol-2-yl)-1<i>H</i>-benzoisoquinoline-1,3(2<i>H</i>)-dione (<b>HPMTB</b>). Single-crystal X-ray diffraction studies in the solid state have provided detailed structural information as well as the molecular packing arrangement of the molecule <b>HPMTB</b> along three dimensions. Solution-phase and solid-state fluorescence studies have revealed the existence of aggregation-induced emissive and mechanofluorochromic properties within the molecule. Detailed solution-phase photophysical investigations of <b>HPMTB</b> have revealed the existence of aggregates in a protic polar solvent (water) via the accumulation of flakes. Solid-state emission also shows the existence of reversible mechanofluorochromism in <b>HPMTB</b>. The current work develops materials that can attain DSE and mechanofluorochromism and sets up the foundation for the development of naphthalimide-based organic molecules for use as luminescent smart materials.","PeriodicalId":34,"journal":{"name":"Crystal Growth & Design","volume":null,"pages":null},"PeriodicalIF":3.8,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142194777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dual-Defect Modified 2D/2D TiO2/g-C3N4 Heterojunction for Photocatalytic H2 Production","authors":"Jiahui Wang,&nbsp;Li Li,&nbsp;Xiangju Ye,&nbsp;Yang Yang*,&nbsp;Wei Ren,&nbsp;Jingbiao Ge,&nbsp;Sujuan Zhang,&nbsp;Xiuzhen Zheng* and Shifu Chen,&nbsp;","doi":"10.1021/acs.cgd.4c0082610.1021/acs.cgd.4c00826","DOIUrl":"https://doi.org/10.1021/acs.cgd.4c00826https://doi.org/10.1021/acs.cgd.4c00826","url":null,"abstract":"<p >In order to solve the current energy and environmental crisis, the design of efficient catalyst materials is a highly effective solution. In this paper, the photocatalytic performance of TiO₂/g-C₃N₄ composites was improved by regulating their microstructure, such as by constructing nanosheet structures, defect sites, and contact interfaces. Although TiO₂ had limited activity in H₂ production under visible light irradiation, it could serve as an electron acceptor of g-C₃N₄, and it greatly increased the photocatalytic activity of g-C₃N₄. The optimal TiO₂/g-C₃N₄ composite showed good photocatalytic performance (436.3 μmol h^–1 g^–1), which was 23.8 and 3 times that of T400 and g-C₃N₄, respectively. The increased photocatalytic activity of the TiO₂/g-C₃N₄ composite could be attributed to the higher separation rate of the photogenerated charge carriers (PCCs), more active sites for the reaction, and a lower energy barrier than that of g-C₃N₄. Through many characterization and testing technologies, this work deeply studies the relationship between the fine structure and reaction mechanism of 2<i>D</i>/2D TiO₂/g-C₃N₄, providing a new direction and understanding for the design and development of 2D materials with highly efficient activity.</p>","PeriodicalId":34,"journal":{"name":"Crystal Growth & Design","volume":null,"pages":null},"PeriodicalIF":3.2,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142246331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ni(111) Substrate Engineering for the Epitaxial Chemical Vapor Deposition Growth of Wrinkle-Free Multilayer Rhombohedral Boron Nitride Films","authors":"Laure Tailpied,&nbsp;Amandine Andrieux-Ledier*,&nbsp;Frédéric Fossard,&nbsp;Jean-Sébastien Mérot,&nbsp;Jean-Manuel Decams and Annick Loiseau,&nbsp;","doi":"10.1021/acs.cgd.4c0047810.1021/acs.cgd.4c00478","DOIUrl":"https://doi.org/10.1021/acs.cgd.4c00478https://doi.org/10.1021/acs.cgd.4c00478","url":null,"abstract":"<p >Here, we report on the low-pressure chemical vapor deposition synthesis of multilayer BN films on single crystalline Ni(111) films. We highlight the crucial role of substrate pretreatment to stabilize the Ni(111) thin film on YSZ/Si(111) prior to BN precursor exposure at high temperature. We show that an in situ double-step thermal process under primary vacuum allows us to obtain clean and flat nickel surfaces suitable for homogeneous BN growth. Scanning and transmission electron microscopies, Raman spectroscopy, and atomic force microscopy have been used to characterize statistically the BN film from the atomic to the millimeter scale. We show that we obtain a sp²-hybridized BN film with a rhombohedral ABC stacking sequence. The 3 nm-thick film is continuous at the millimeter scale, with a mean roughness of 0.9 nm and no wrinkles.</p>","PeriodicalId":34,"journal":{"name":"Crystal Growth & Design","volume":null,"pages":null},"PeriodicalIF":3.2,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142237776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Growth, Structure, Optical, and Thermal Properties of EuCa4O(BO3)3 Single Crystals","authors":"Chen Yang,&nbsp;Tuanjie Liang,&nbsp;Zhigang Sun,&nbsp;Linwen Jiang,&nbsp;Lirong Wang,&nbsp;Huiyu Qian and Yanqing Zheng*,&nbsp;","doi":"10.1021/acs.cgd.4c0077210.1021/acs.cgd.4c00772","DOIUrl":"https://doi.org/10.1021/acs.cgd.4c00772https://doi.org/10.1021/acs.cgd.4c00772","url":null,"abstract":"<p >EuCa₄O(BO₃)₃ (EuCOB) crystals were grown by the Bridgman method for the first time. The purpose of this work is to evaluate the visible laser application prospect of EuCOB single crystal. The phase structure, thermal properties, and optical properties of EuCOB were studied, and the density of states was calculated by the first principles. The cell parameters of the EuCOB crystal are <i>a</i> = 8.0966 Å, <i>b</i> = 16.0309 Å, <i>c</i> = 3.5670 Å, and β = 101.29°, respectively. The thermal conductivity of the EuCOB crystal is 2.98 W m^–1K^–1, which has a significant advantage in RCOB series crystals. The melting point of EuCOB crystal is 1480 °C. The maximum absorption cross-section of the EuCOB crystal is 1.0123 × 10^–21 cm² (@393 nm), the maximum emission cross-section along the <i>Y</i> direction is 2.644 × 10^–21 cm² (@610 nm), and the fluorescence decay time τ is 1.04 ms. A series of data and analyses prove that the EuCOB crystal is a potential red laser gain material and has great potential in the field of subsequent lasers.</p>","PeriodicalId":34,"journal":{"name":"Crystal Growth & Design","volume":null,"pages":null},"PeriodicalIF":3.2,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142237868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Differences in Performance among ECPs with Different Metal Centers Based on Highly Stable TzTO","authors":"Jinhao Zhang, Zhiyuan Jin, Taichuan Li, Zhicheng Guo, Rufang Peng, Bo Jin","doi":"10.1021/acs.cgd.4c00341","DOIUrl":"https://doi.org/10.1021/acs.cgd.4c00341","url":null,"abstract":"The stability and detonation properties of energetic coordination polymers (ECPs) are usually directly related to the selection of ligands. However, different metals and ligands may form different structures, which will greatly affect the stability and detonation performance of ECPs. Three-dimensional (3D) energetic metal–organic frameworks (EMOFs) usually exhibit enhanced energetic performances and modest stability compared with one-dimensional (1D) and two-dimensional (2D) ECPs. In this work, an energetic internal salt H₂TzTO (5-(1<i>H</i>-1,2,4-triazol-4-ium-3-yl)-1<i>H</i>-tetrazol-1-olate) with high stability was selected as the ligand and coordinated with four metal centers, Na(I), K(I), Co(II), and Ni(II), to form three ECPs, named [Na(HTzTO)(H₂O)]_<i>n</i>·0.5H₂O, Co(HTzTO)₂(H₂O)₂, and Ni(HTzTO)₂(H₂O)₂·2H₂O, and one EMOF [K(HTzTO)]_<i>n</i>, respectively. The four compounds showed excellent thermal stability [decomposition temperature (<i>T</i>_d) ≥ 263 °C] and detonation properties [detonation velocity (<i>D</i>) ≥ 8587 m·s–¹ and detonation pressure (<i>P</i>) ≥ 33.8 GPa], but their properties are different due to the influence of the metal center and structure. Among them, [K(HTzTO)]_<i>n</i> and Co(HTzTO)₂(H₂O)₂ exhibit surprising thermal stability (<i>T</i>_d = 344 and 347 °C, respectively) due to the formation of face-to-face π–π stacking in their structures, which greatly enhances the stability of the molecules.","PeriodicalId":34,"journal":{"name":"Crystal Growth & Design","volume":null,"pages":null},"PeriodicalIF":3.8,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142194582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of Isomerization of Diphenothiazine Derivatives on Photophysical Properties, Crystal Structure, and Force-Stimulus Response","authors":"He Zhao,&nbsp;Xiuguang Wang,&nbsp;Siwen Hu,&nbsp;Meng Liang and Pengchong Xue*,&nbsp;","doi":"10.1021/acs.cgd.4c0068710.1021/acs.cgd.4c00687","DOIUrl":"https://doi.org/10.1021/acs.cgd.4c00687https://doi.org/10.1021/acs.cgd.4c00687","url":null,"abstract":"<p >Two D-A-D diphenothiazine derivatives, 24DPTCN and 26DPTCN, were prepared to investigate the impact of molecular isomerization on the luminescent behaviors in solution and crystalline states and the response to the external force stimuli. It was found that the two compounds had two emission bands in solutions. The quantum chemical calculations suggest that the coexistence of two configurations results in two emission bands, the short-wavelength bands are from the axial–equatorial (<i>ax-eq</i>) form for 24DPTCN and 26DPTCN, and the long-wavelength emission bands are ascribed to those molecules in equatorial–equatorial (<i>eq-eq</i>) form. In the crystalline phase, 24DPTCN adopts an <i>ax-eq</i> form and emits very weak blue fluorescence, and 26DPTCN has an <i>eq-eq</i> conformation and emits green fluorescence. More importantly, they also possess distinct response to force stimulus. 24DPTCN had a large redshift of 85 nm in the emission band under mild force stimulus, accompanied by an enhancement in the emission intensity because of the configuration conversion from <i>ax-eq</i> to <i>eq-eq</i>. On the other hand, only a shift of 28 nm was observed, and the fluorescence weakened after 26DPTCN crystals were ground because a small number of <i>eq-eq</i> 26DPTCN transferred into <i>ax-eq</i> ones.</p>","PeriodicalId":34,"journal":{"name":"Crystal Growth & Design","volume":null,"pages":null},"PeriodicalIF":3.2,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142237778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Growth, Structure, Optical, and Thermal Properties of EuCa4O(BO3)3 Single Crystals","authors":"Chen Yang, Tuanjie Liang, Zhigang Sun, Linwen Jiang, Lirong Wang, Huiyu Qian, Yanqing Zheng","doi":"10.1021/acs.cgd.4c00772","DOIUrl":"https://doi.org/10.1021/acs.cgd.4c00772","url":null,"abstract":"EuCa₄O(BO₃)₃ (EuCOB) crystals were grown by the Bridgman method for the first time. The purpose of this work is to evaluate the visible laser application prospect of EuCOB single crystal. The phase structure, thermal properties, and optical properties of EuCOB were studied, and the density of states was calculated by the first principles. The cell parameters of the EuCOB crystal are <i>a</i> = 8.0966 Å, <i>b</i> = 16.0309 Å, <i>c</i> = 3.5670 Å, and β = 101.29°, respectively. The thermal conductivity of the EuCOB crystal is 2.98 W m^–1K^–1, which has a significant advantage in RCOB series crystals. The melting point of EuCOB crystal is 1480 °C. The maximum absorption cross-section of the EuCOB crystal is 1.0123 × 10^–21 cm² (@393 nm), the maximum emission cross-section along the <i>Y</i> direction is 2.644 × 10^–21 cm² (@610 nm), and the fluorescence decay time τ is 1.04 ms. A series of data and analyses prove that the EuCOB crystal is a potential red laser gain material and has great potential in the field of subsequent lasers.","PeriodicalId":34,"journal":{"name":"Crystal Growth & Design","volume":null,"pages":null},"PeriodicalIF":3.8,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142194583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Pulsed Laser Deposition of Epitaxial SrTiO3/Sr3Al2O6 Templates as a Water-Soluble Sacrificial Layer for GaAs Growth and Lift-Off","authors":"Imran S. Khan,&nbsp;William E. McMahon,&nbsp;Chun-Sheng Jiang,&nbsp;Patrick Walker,&nbsp;Andriy Zakutayev and Andrew G. Norman*,&nbsp;","doi":"10.1021/acs.cgd.3c0153110.1021/acs.cgd.3c01531","DOIUrl":"https://doi.org/10.1021/acs.cgd.3c01531https://doi.org/10.1021/acs.cgd.3c01531","url":null,"abstract":"<p >Despite the record-high efficiency of GaAs solar cells, their terrestrial application is limited due to both the particularly high costs related to the required single-crystal substrates and epitaxial growth. A water-soluble lift-off layer could reduce costs by avoiding the need for toxic and dangerous etchants, substrate repolishing, and expensive process steps. Sr₃Al₂O₆ (SAO) is a water-soluble cubic oxide, and SrTiO₃ (STO) is a perovskite oxide, where <i>a</i>_SAO ≈ 4 × <i>a</i>_STO ≈ (2√2)<i>a</i>_GaAs. Here, the pulsed laser-deposited epitaxial growth of SrTiO₃/Sr₃Al₂O₆ templates on STO and Ge substrates for epitaxial GaAs growth was investigated, where SAO works as a sacrificial layer and STO protects the hygroscopic SAO during substrate transfer between deposition chambers. We identified that the SAO film quality is strongly dependent on the growth temperature and the O₂ partial pressure, where either a high <i>T</i> or a high <i>P</i>(O₂) improves the quality. XRD spectra of the films with optimized deposition parameters showed an epitaxial STO/SAO stack aligned to the STO (100) substrate, and TEM analysis revealed that the grown films were epitaxially crystalline throughout the thickness. The STO/SAO growth on Ge substrates at a high <i>T</i> with no intentional O₂ flow resulted in some nonepitaxial grains and surface pits, likely due to partial Ge oxidation. GaAs was grown by metalorganic vapor-phase epitaxy (MOVPE) on STO/SAO/STO templates. Lift-off after dissolving the sacrificial SAO in water resulted in free-standing ⟨001⟩ preferentially oriented polycrystalline GaAs.</p><p >GaAs was epitaxially lifted off from a SrTiO₃ substrate using Sr₃Al₂O₆ as a water-soluble sacrificial layer, resulting in ⟨001⟩ preferentially oriented polycrystalline free-standing GaAs films.</p>","PeriodicalId":34,"journal":{"name":"Crystal Growth & Design","volume":null,"pages":null},"PeriodicalIF":3.2,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acs.cgd.3c01531","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142237857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Pulsed Laser Deposition of Epitaxial SrTiO3/Sr3Al2O6 Templates as a Water-Soluble Sacrificial Layer for GaAs Growth and Lift-Off","authors":"Imran S. Khan, William E. McMahon, Chun-Sheng Jiang, Patrick Walker, Andriy Zakutayev, Andrew G. Norman","doi":"10.1021/acs.cgd.3c01531","DOIUrl":"https://doi.org/10.1021/acs.cgd.3c01531","url":null,"abstract":"Despite the record-high efficiency of GaAs solar cells, their terrestrial application is limited due to both the particularly high costs related to the required single-crystal substrates and epitaxial growth. A water-soluble lift-off layer could reduce costs by avoiding the need for toxic and dangerous etchants, substrate repolishing, and expensive process steps. Sr₃Al₂O₆ (SAO) is a water-soluble cubic oxide, and SrTiO₃ (STO) is a perovskite oxide, where <i>a</i>_SAO ≈ 4 × <i>a</i>_STO ≈ (2√2)<i>a</i>_GaAs. Here, the pulsed laser-deposited epitaxial growth of SrTiO₃/Sr₃Al₂O₆ templates on STO and Ge substrates for epitaxial GaAs growth was investigated, where SAO works as a sacrificial layer and STO protects the hygroscopic SAO during substrate transfer between deposition chambers. We identified that the SAO film quality is strongly dependent on the growth temperature and the O₂ partial pressure, where either a high <i>T</i> or a high <i>P</i>(O₂) improves the quality. XRD spectra of the films with optimized deposition parameters showed an epitaxial STO/SAO stack aligned to the STO (100) substrate, and TEM analysis revealed that the grown films were epitaxially crystalline throughout the thickness. The STO/SAO growth on Ge substrates at a high <i>T</i> with no intentional O₂ flow resulted in some nonepitaxial grains and surface pits, likely due to partial Ge oxidation. GaAs was grown by metalorganic vapor-phase epitaxy (MOVPE) on STO/SAO/STO templates. Lift-off after dissolving the sacrificial SAO in water resulted in free-standing ⟨001⟩ preferentially oriented polycrystalline GaAs.","PeriodicalId":34,"journal":{"name":"Crystal Growth & Design","volume":null,"pages":null},"PeriodicalIF":3.8,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142194584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ni(111) Substrate Engineering for the Epitaxial Chemical Vapor Deposition Growth of Wrinkle-Free Multilayer Rhombohedral Boron Nitride Films","authors":"Laure Tailpied, Amandine Andrieux-Ledier, Frédéric Fossard, Jean-Sébastien Mérot, Jean-Manuel Decams, Annick Loiseau","doi":"10.1021/acs.cgd.4c00478","DOIUrl":"https://doi.org/10.1021/acs.cgd.4c00478","url":null,"abstract":"Here, we report on the low-pressure chemical vapor deposition synthesis of multilayer BN films on single crystalline Ni(111) films. We highlight the crucial role of substrate pretreatment to stabilize the Ni(111) thin film on YSZ/Si(111) prior to BN precursor exposure at high temperature. We show that an in situ double-step thermal process under primary vacuum allows us to obtain clean and flat nickel surfaces suitable for homogeneous BN growth. Scanning and transmission electron microscopies, Raman spectroscopy, and atomic force microscopy have been used to characterize statistically the BN film from the atomic to the millimeter scale. We show that we obtain a sp²-hybridized BN film with a rhombohedral ABC stacking sequence. The 3 nm-thick film is continuous at the millimeter scale, with a mean roughness of 0.9 nm and no wrinkles.","PeriodicalId":34,"journal":{"name":"Crystal Growth & Design","volume":null,"pages":null},"PeriodicalIF":3.8,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142194585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}