1997 IEEE International SOI Conference Proceedings最新文献_第2页

Behavior of indium in thin SOI films 铟在SOI薄膜中的行为

1997 IEEE International SOI Conference Proceedings Pub Date : 1997-10-06 DOI: 10.1109/SOI.1997.634936

J. Jacobs, R. Schiebel, K. Joyner, T. Houston

引用次数: 0

Dynamic effects in BTG/SOI MOSFETs and circuits due to distributed body resistance 分布体电阻对BTG/SOI mosfet和电路的动态影响

1997 IEEE International SOI Conference Proceedings Pub Date : 1997-10-06 DOI: 10.1109/SOI.1997.634916

G. Workman, J. Fossum

引用次数: 4

A model for SIMOX buried-oxide low-field conduction and trapping SIMOX埋地氧化物低场传导和捕集模型

1997 IEEE International SOI Conference Proceedings Pub Date : 1997-10-06 DOI: 10.1109/SOI.1997.634927

J. Krska, J. Yoon, J. E. Chung

引用次数: 0

The HgFET: a new characterization tool for SOI silicon film properties HgFET:一种新的SOI硅膜性能表征工具

1997 IEEE International SOI Conference Proceedings Pub Date : 1997-10-06 DOI: 10.1109/SOI.1997.634992

H. Hovel

{"title":"The HgFET: a new characterization tool for SOI silicon film properties","authors":"H. Hovel","doi":"10.1109/SOI.1997.634992","DOIUrl":"https://doi.org/10.1109/SOI.1997.634992","url":null,"abstract":"Summary form only given. SOI starting wafer characterization relies heavily on non-destructive measurements such as thickness, uniformity, and lifetime. Leakage current through the BOX is sometimes measured and used to determine an electrical defect density. The electrical quality of the Si film is less well known. One device that can be used to assess Si film properties is the \"pseudo-FET\" in which point contacts made to the film act as the source and drain while the substrate and BOX act as the gate electrode and oxide. However, the point contacts act as Schottky barriers and the characteristics are pressure sensitive, somewhat limiting the properties that can be measured. A new version of the pseudo-FET called the HgFET is described here, in which a combination of broad area Hg electrodes coupled with special surface treatment are used to overcome the limitations of point contacts. The HgFET can be used for quality control of the starting Si film, yielding the electron and hole mobilities, the BOX charge, the interface state density, the doping level, the hole and electron transconductances, the flatband voltage, the linear and saturated threshold voltages, and the mobility versus field.","PeriodicalId":344728,"journal":{"name":"1997 IEEE International SOI Conference Proceedings","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126343363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 11

High-sensitivity measurement of particles on SOI wafers SOI晶圆上颗粒的高灵敏度测量

1997 IEEE International SOI Conference Proceedings Pub Date : 1997-10-06 DOI: 10.1109/SOI.1997.634993

H. Naruoka, Y. Yoshida, T. Iwamatsu, Y. Yamaguchi, T. Ipposhi, H. Yamamoto

引用次数: 2

Carrier recombination lifetime measurement of bonded SOI wafers by microwave photoconductivity decay method 微波光导衰减法测定键合SOI晶圆载流子复合寿命

1997 IEEE International SOI Conference Proceedings Pub Date : 1997-10-06 DOI: 10.1109/SOI.1997.634962

S. Ahmed, B. Catarini, S. Lizotte, K. Iba, H. Hashizume, S. Sumie

{"title":"Carrier recombination lifetime measurement of bonded SOI wafers by microwave photoconductivity decay method","authors":"S. Ahmed, B. Catarini, S. Lizotte, K. Iba, H. Hashizume, S. Sumie","doi":"10.1109/SOI.1997.634962","DOIUrl":"https://doi.org/10.1109/SOI.1997.634962","url":null,"abstract":"Microwave photoconductivity decay (/spl mu/PCD) method was used for the measurement of bulk carrier recombination lifetime of bonded silicon-on-insulator (SOI) wafers in order to evaluate the quality of the starting material from different vendors and to monitor the degradation of lifetime during processing of the wafers. The goal of the investigation was to determine a correlation between the carrier lifetime of the SOI layer of the starting material and the output of the devices fabricated on the same wafer. Bonded SOI wafers from three different vendors were evaluated by a KOBELCO LTA-1000EP semiconductor wafer lifetime measuring system in order to investigate the quality of device layer silicon for the fabrication of optoelectronic devices where carrier lifetime plays a dominant role. The salient feature of the measuring system is the availability of three lasers with different depth of penetration where one of the lasers penetrates only 1 /spl mu/m which is suitable for lifetime measurement of SOI layer. The wavelength of the three lasers were 523 nm, 904 nm and 1047 mn with penetration depths of about 1 /spl mu/m, 30 /spl mu/m and 500 /spl mu/m respectively. Measurements were conducted on both front and backside of the SOI wafers with three lasers to ensure the accuracy of the lifetime of the layer of interest. The repeatability of the measurement was excellent and was within 3%. Based on the measured carrier lifetime of the starting materials, SOI wafers from two vendors were selected for optoelectronic device fabrication. The lifetime map of each processed wafers was obtained and the measured short circuit current of the devices were found to correlate with the average carrier lifetime of the same wafers.","PeriodicalId":344728,"journal":{"name":"1997 IEEE International SOI Conference Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132940803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

3-D numerical simulation of the pseudo-MOS transistor 伪mos晶体管的三维数值模拟

1997 IEEE International SOI Conference Proceedings Pub Date : 1997-10-06 DOI: 10.1109/SOI.1997.634949

D. Munteanu, S. Cristoloveanu, E. Guichard

引用次数: 0

Transient response after pulsed ionizing excitation of several buried oxides in fully-depleted SOI NMOS transistors 几种埋藏氧化物在全耗尽SOI NMOS晶体管中脉冲电离激发后的瞬态响应

1997 IEEE International SOI Conference Proceedings Pub Date : 1997-10-06 DOI: 10.1109/SOI.1997.634925

Y. Rebours, V. Ferlet-Cavrois, O. Gruber, C. Raynaud, J. Pelloie

引用次数: 0

Characterization of interface traps in SOI material SOI材料中界面陷阱的表征

1997 IEEE International SOI Conference Proceedings Pub Date : 1997-10-06 DOI: 10.1109/SOI.1997.634934

K. Vanheusden, W. L. Warren, W. Shedd, R. Pugh, D. Fleetwood, J. Schwank, R. Devine

引用次数: 3

Analysis of thin film SOI material defect requirements for advanced circuit applications [DRAMs] 先进电路应用[dram]中薄膜SOI材料缺陷要求分析

1997 IEEE International SOI Conference Proceedings Pub Date : 1997-10-06 DOI: 10.1109/SOI.1997.634966

M. Alles, S. Wilson, H. Hovel, W. Maszara, R. Dolan

引用次数: 0