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1990 IEEE SOS/SOI Technology Conference. Proceedings最新文献

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Highly selective etch stop by stress compensation for thin-film BESOI 薄膜BESOI的应力补偿高选择性蚀刻停止
1990 IEEE SOS/SOI Technology Conference. Proceedings Pub Date : 1990-10-02 DOI: 10.1109/SOSSOI.1990.145753
C. Hunt, G. Rouse, C. Harendt, M. Green
{"title":"Highly selective etch stop by stress compensation for thin-film BESOI","authors":"C. Hunt, G. Rouse, C. Harendt, M. Green","doi":"10.1109/SOSSOI.1990.145753","DOIUrl":"https://doi.org/10.1109/SOSSOI.1990.145753","url":null,"abstract":"A limiting issue in the application of the BESOI (bond and etchback silicon-on-insulator) technique to whole wafers is the final film thickness nonuniformity, which typically totals approximately 40 nm using the etchback techniques presented to date. Such variation makes BESOI impractical for thin-film SOI (e.g. <or=300 nm) and applications to fully depleted MOS. The etchback process is a major contributor to the final film thickness nonuniformity. The authors demonstrate a highly selective etch stop of 2*10/sup 20/ cm/sup -3/ boron concentration, stress compensated by introducing GE (a high atomic number species). The Si/sub 1-x-y/ Ge/sub x/B/sub gamma / etch stop is selective through the reduction of the passivation potential in KOH to a point where negligible etching occurs. The stress compensation gives the wafer surface an exact Si lattice constant. Epitaxial layers are grown over this etch stop without misfit dislocations.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122134005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Low temperature effective channel mobility in fully depleted and partially depleted SOI MOSFETs 完全耗尽和部分耗尽SOI mosfet的低温有效沟道迁移率
1990 IEEE SOS/SOI Technology Conference. Proceedings Pub Date : 1990-10-02 DOI: 10.1109/SOSSOI.1990.145723
J. Wang, N. Kistler, J. Woo, C. Viswanathan, P. Vasudev
{"title":"Low temperature effective channel mobility in fully depleted and partially depleted SOI MOSFETs","authors":"J. Wang, N. Kistler, J. Woo, C. Viswanathan, P. Vasudev","doi":"10.1109/SOSSOI.1990.145723","DOIUrl":"https://doi.org/10.1109/SOSSOI.1990.145723","url":null,"abstract":"The low-field effective mobility was studied for partially depleted and fully depleted silicon-on-insulator MOSFETs at temperatures from 300 K to 77 K. The transistors used in the study were fabricated on SIMOX wafers with a film thickness of 1800 AA and a buried oxide thickness of 3500 AA. The partially depleted device shows a greater improvement at low temperature. The mobility in both thin-film devices is essentially independent of inversion charge density, indicating a weak dependence on perpendicular electric field.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131803700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Microstructural evolution of oxides during processing of oxygen implanted SOI material 注入氧SOI材料加工过程中氧化物的微观结构演变
1990 IEEE SOS/SOI Technology Conference. Proceedings Pub Date : 1990-10-02 DOI: 10.1109/SOSSOI.1990.145703
S. Krause, S. Visisterngtrakul, B.F. Cordts, P. Roitman
{"title":"Microstructural evolution of oxides during processing of oxygen implanted SOI material","authors":"S. Krause, S. Visisterngtrakul, B.F. Cordts, P. Roitman","doi":"10.1109/SOSSOI.1990.145703","DOIUrl":"https://doi.org/10.1109/SOSSOI.1990.145703","url":null,"abstract":"Silicon-on-insulator (SOI) material fabrication by oxygen implantation (SIMOX) is addressed. Formation and growth of the buried oxide, formation and evolution of oxygen bubbles in the top silicon layer, and precipitate evolution and elimination during ramping and annealing are considered. Recent work is summarized on the effects of processing conditions on oxide evolution. Specifically, effects of implantation conditions on buried oxide formation, effects of ramping conditions on oxygen bubble evolution and defect formation, and effects of annealing conditions on the structure of the buried oxide and its interfaces are discussed.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130548067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Stacked SOI layers obtained by zone melting recrystallization 区熔再结晶得到的SOI层叠层
1990 IEEE SOS/SOI Technology Conference. Proceedings Pub Date : 1990-10-02 DOI: 10.1109/SOSSOI.1990.145707
P. Mertens, H. Maes
{"title":"Stacked SOI layers obtained by zone melting recrystallization","authors":"P. Mertens, H. Maes","doi":"10.1109/SOSSOI.1990.145707","DOIUrl":"https://doi.org/10.1109/SOSSOI.1990.145707","url":null,"abstract":"The authors report on lamp heated ZMR (zone melting recrystallization) of two silicon layers, stacked on top of each other and separated by an oxide layer in between. A 1.5- mu m thermal oxide was grown on","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129886982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Recombination lifetime measurements in SOI materials using a depletion-mode MOSFET 用耗尽型MOSFET测量SOI材料的复合寿命
1990 IEEE SOS/SOI Technology Conference. Proceedings Pub Date : 1990-10-02 DOI: 10.1109/SOSSOI.1990.145712
D. Vu, W. Henderson, P. Zavracky, N. Cheong
{"title":"Recombination lifetime measurements in SOI materials using a depletion-mode MOSFET","authors":"D. Vu, W. Henderson, P. Zavracky, N. Cheong","doi":"10.1109/SOSSOI.1990.145712","DOIUrl":"https://doi.org/10.1109/SOSSOI.1990.145712","url":null,"abstract":"The authors measured recombination lifetime in SOI by using a depletion-mode MOSFET. The drain-source current transient of depletion-mode MOSFETs when a reversed step bias is applied to the gate is studied at elevated temperatures. A theoretical analysis is performed by considering the different generation processes as functions of temperature. At high temperature, the minority carriers required for the inversion charge come mainly from the quasi-neutral region beneath the depletion region and from the nearby Si film-buried oxide interface through a generation-diffusion process; generation from the depletion region is neglected as well as the generation from the front gate interface. This analysis leads to a determination of a function containing the drain-source current varying linearly with time.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129419671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of gamma irradiation on ESR active defects in SIMOX structures 辐照对SIMOX结构中ESR活性缺陷的影响
1990 IEEE SOS/SOI Technology Conference. Proceedings Pub Date : 1990-10-02 DOI: 10.1109/SOSSOI.1990.145762
A. Stesmans, A. Revesz, H. Hughes
{"title":"Influence of gamma irradiation on ESR active defects in SIMOX structures","authors":"A. Stesmans, A. Revesz, H. Hughes","doi":"10.1109/SOSSOI.1990.145762","DOIUrl":"https://doi.org/10.1109/SOSSOI.1990.145762","url":null,"abstract":"Silicon-on-insulator (SOI) structures formed on","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131964792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Improved speed and accuracy for optical reflectance profiling of SIMOX wafers 提高了SIMOX晶圆的光学反射轮廓的速度和准确性
1990 IEEE SOS/SOI Technology Conference. Proceedings Pub Date : 1990-10-02 DOI: 10.1109/SOSSOI.1990.145713
E. A. Johnson, A. Dudkin
{"title":"Improved speed and accuracy for optical reflectance profiling of SIMOX wafers","authors":"E. A. Johnson, A. Dudkin","doi":"10.1109/SOSSOI.1990.145713","DOIUrl":"https://doi.org/10.1109/SOSSOI.1990.145713","url":null,"abstract":"An ongoing program to develop manufacturing technology which will improve the availability and reduce the cost of SIMOX wafers is reported. A major thrust of this program is the identification of characterization and measurement techniques for in-process monitoring of SIMOX wafers. An improved method is developed for using optical reflectance to measure oxygen concentration versus depth in as-implanted and as-annealed SIMOX wafers. This method improves the speed of the fitting calculation by more than a factor of 2000 while improving the accuracy by more than an order of magnitude.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132137392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling of thin film depletion-mode SOI MOSFETs 薄膜耗尽型SOI mosfet的建模
1990 IEEE SOS/SOI Technology Conference. Proceedings Pub Date : 1990-10-02 DOI: 10.1109/SOSSOI.1990.145732
F. Balestra, M. Benachir, G. Ghibaudo, J. Brini
{"title":"Modeling of thin film depletion-mode SOI MOSFETs","authors":"F. Balestra, M. Benachir, G. Ghibaudo, J. Brini","doi":"10.1109/SOSSOI.1990.145732","DOIUrl":"https://doi.org/10.1109/SOSSOI.1990.145732","url":null,"abstract":"No reliable analytical model exists for the case of fully depleted thin film depletion-mode (DM) SOI MOSFETs. The coupling between the front and back interfaces is particularly important in the weak accumulation regime. The authors propose analytical models for fully depleted DM SOI MOSFETs, by taking into consideration all the parameters of the SOI structure. The case of two or three interfaces (with a Si substrate) can be modeled.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"44 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134029514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Consideration of the structure design for thin SOI/MOSFET under and beyond the half micron regime 半微米及以上SOI/MOSFET薄层结构设计的思考
1990 IEEE SOS/SOI Technology Conference. Proceedings Pub Date : 1990-10-02 DOI: 10.1109/SOSSOI.1990.145690
Y. Yamaguchi, T. Iwamatsu, T. Nishimura, Y. Akasaka
{"title":"Consideration of the structure design for thin SOI/MOSFET under and beyond the half micron regime","authors":"Y. Yamaguchi, T. Iwamatsu, T. Nishimura, Y. Akasaka","doi":"10.1109/SOSSOI.1990.145690","DOIUrl":"https://doi.org/10.1109/SOSSOI.1990.145690","url":null,"abstract":"A salicide process for thin SIMOX MOSFETs was developed, and the prospect of device application in the submicron regime was examined by evaluating the current drivability of MOSFETs and analyzing its limiting factors in both short and long channel regions. One problem in the scaling of thin-SOI MOSFETs (especially for NMOS) was the lowered drain breakdown voltage caused by parasitic bipolar operation due to a floating body structure. Latch-up phenomena in a unit NMOS diminishes the reliable operation of the CMOS circuit. The problem can be solved by lowering the drain electric field to reduce generated holes from impact ionization which reinforces parasitic bipolar operation. The authors studied the LDD (lightly doped drain) structure and an advanced gate overlapped LDD structure for device application of the thin-SOI/MOSFET under and beyond the half-micron regime.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133490946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Single event charge enhancement in SOI devices SOI器件中的单事件电荷增强
1990 IEEE SOS/SOI Technology Conference. Proceedings Pub Date : 1990-10-02 DOI: 10.1109/SOSSOI.1990.145692
H. Belhaddad, R. Gaillard, G. Poirault, A. Poncet
{"title":"Single event charge enhancement in SOI devices","authors":"H. Belhaddad, R. Gaillard, G. Poirault, A. Poncet","doi":"10.1109/SOSSOI.1990.145692","DOIUrl":"https://doi.org/10.1109/SOSSOI.1990.145692","url":null,"abstract":"Studies of single-particle ion effects in SOI (silicon-on-insulator) devices show that a new mechanism can contribute to soft error rates: the electron-hole pairs generated in the silicon substrate can charge the back Si-SiO/sub 2/-Si capacitor. An analysis with the 2-D device simulator JUPIN shows that the bulk Si substrate current contribution to the charging current is greater than the normal photocurrent created in the drain-body junction. This current is important in the inversion mode and is still present but reduced in the accumulation mode. An analytical model has been developed to relate the current characteristics to physical parameters of the SOI structure.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127392560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
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