Improved speed and accuracy for optical reflectance profiling of SIMOX wafers

Abstract

An ongoing program to develop manufacturing technology which will improve the availability and reduce the cost of SIMOX wafers is reported. A major thrust of this program is the identification of characterization and measurement techniques for in-process monitoring of SIMOX wafers. An improved method is developed for using optical reflectance to measure oxygen concentration versus depth in as-implanted and as-annealed SIMOX wafers. This method improves the speed of the fitting calculation by more than a factor of 2000 while improving the accuracy by more than an order of magnitude.<>