J. Wang, N. Kistler, J. Woo, C. Viswanathan, P. Vasudev
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Low temperature effective channel mobility in fully depleted and partially depleted SOI MOSFETs
The low-field effective mobility was studied for partially depleted and fully depleted silicon-on-insulator MOSFETs at temperatures from 300 K to 77 K. The transistors used in the study were fabricated on SIMOX wafers with a film thickness of 1800 AA and a buried oxide thickness of 3500 AA. The partially depleted device shows a greater improvement at low temperature. The mobility in both thin-film devices is essentially independent of inversion charge density, indicating a weak dependence on perpendicular electric field.<>
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