Modeling of thin film depletion-mode SOI MOSFETs

Abstract

No reliable analytical model exists for the case of fully depleted thin film depletion-mode (DM) SOI MOSFETs. The coupling between the front and back interfaces is particularly important in the weak accumulation regime. The authors propose analytical models for fully depleted DM SOI MOSFETs, by taking into consideration all the parameters of the SOI structure. The case of two or three interfaces (with a Si substrate) can be modeled.<>