1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application最新文献_第3页

Performance tests of quasi-CW laser diode pump arrays conducted or sponsored by NASA Goddard Space Flight Center 美国宇航局戈达德航天飞行中心进行或赞助的准连续波激光二极管泵浦阵列性能试验

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application Pub Date : 1997-08-11 DOI: 10.1109/LEOSST.1997.619230

M. Krainak, R. Afzal, M. Stephen, G. Browder, J. Haden, N. Carlson

引用次数: 7

Analysis of three dimensionally confined microcavity surface emitting lasers using vector finite elements 三维受限微腔面发射激光器的矢量有限元分析

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application Pub Date : 1997-08-11 DOI: 10.1109/LEOSST.1997.619108

M. J. Noble, J. Lott, J. Loehr, P. Sotirelis

引用次数: 1

Exotic and mundane substrates for gallium nitride heteroepitaxy 氮化镓异质外延的外来和普通衬底

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application Pub Date : 1997-08-11 DOI: 10.1109/LEOSST.1997.619250

E. Hellman

引用次数: 1

Towards microcavity vertical cavity lasers: aperture and cavity design for high efficiency and low threshold 面向微腔垂直腔激光器:高效低阈值的孔径和腔体设计

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application Pub Date : 1997-08-11 DOI: 10.1109/LEOSST.1997.619080

E. Hegblom, B. Thibeault, L. Coldren

{"title":"Towards microcavity vertical cavity lasers: aperture and cavity design for high efficiency and low threshold","authors":"E. Hegblom, B. Thibeault, L. Coldren","doi":"10.1109/LEOSST.1997.619080","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619080","url":null,"abstract":"We have fabricated /spl lambda/=980 nm vertical cavity lasers with a tapered oxide profile which is produced by placing a 10.5 nm layer of AlAs within the first p-mirror layer which is a 230 nm (3/4 /spl lambda/) thick Al/sub 0.9/Ga/sub 0.1/As layer. We have plotted the scattering loss (as determined from the differential efficiency of tapered and abrupt apertured devices) vs. the radius of the opening in the oxide. Simulations of 980 nm AlAs/GaAs VCLs with quarter-wave thick apertures tapered over more than /spl sim/3 /spl mu/m show they have no excess loss. Although for a given mode size, scattering losses from such a \"long\" tapered aperture are much lower than for an abrupt aperture, the apertures close off before the mode size can shrink below a l/e/sup 2/ radius of /spl sim/1.5 /spl mu/m. Tapering quarter-wave thick apertures over a shorter distance (/spl sim/1 /spl mu/m) not only lowers scattering losses at the small aperture sizes, but also confines the mode to the smallest sizes. Ultimately, the smallest size mode confined by a single aperture (obtained by using a parabolic (ideal lens) profile) is limited by the angular stop-band of the DBR mirror. For 980 nm VCLs with AlAs/GaAs mirrors the smallest mode size has a l/e/sup 2/ radius of /spl sim/0.6 /spl mu/m. To reduce this size further one would need to turn to dielectric mirrors or use multiple apertures which are thin so as not to introduce additional losses.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126754733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Novel mechanism for ultrafast optical nonlinearity in semiconductor laser amplifier using assist light 利用辅助光实现半导体激光放大器超快光学非线性的新机理

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application Pub Date : 1997-08-11 DOI: 10.1109/LEOSST.1997.619225

M. Tsurusawa, M. Usami, Y. Matsushima

引用次数: 2

Are WDM component needs for datacom different than for telecom? 数据通信的WDM组件需求与电信的不同吗?

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application Pub Date : 1997-08-11 DOI: 10.1109/LEOSST.1997.619141

Kai Liu

{"title":"Are WDM component needs for datacom different than for telecom?","authors":"Kai Liu","doi":"10.1109/LEOSST.1997.619141","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619141","url":null,"abstract":"In the last few years, wavelength division multiplexing has successfully penetrated the long-haul telephony infrastructure to the degree that some general agreement exists as to the associated component requirements. Although manufacturers still make primarily custom devices, these custom designs resemble each other more than they differ. As a result, manufacturers have been able to make the commitments that allow their technology to develop which, in turn, enable faster maturing of WDM systems. In this, the work on standardization has been quite helpful even though the stated purpose of ensuring interoperability of systems is far from realized. Now, the research community's attention is beginning to turn to new WDM markets, primarily access telephony, but also high-end datacom. The purpose of this paper is to discuss some early ideas on how component requirements might differ for these new markets. Of course, there has been much discussion about the general trends towards a blurring between datacom and telecom as Internet traffic becomes a significant fraction of the telephony load, and as voice/video real-time applications are of increasing interest for Internet and Web applications. However, these trends are likely to result in changes at higher layers than the physical layer so it is impossible to account for them except to note that perhaps WDM offers some flexibility to meet changing resource allocation needs in the future.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122413979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The origins of quantum noise in photonics 光子学中量子噪声的起源

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application Pub Date : 1997-08-11 DOI: 10.1109/LEOSST.1997.619216

C. Henry, R. Kazarinov

引用次数: 2

Configuration and performance for a WDM NAM network WDM NAM网络的配置和性能

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application Pub Date : 1997-08-11 DOI: 10.1109/LEOSST.1997.619130

A. Grah

引用次数: 1

An integrated optical add/drop multiplexer in InP based on elliptic couplers and Bragg grating reflector 一种基于椭圆耦合器和Bragg光栅反射器的集成InP光学加/降复用器

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application Pub Date : 1997-08-11 DOI: 10.1109/LEOSST.1997.619150

C. Weil, D. van Thourhout, I. Moerman, S. Goeman, K. Vandeputte, R. Baets, F. Groen, Y. Zhu

引用次数: 1

Spectral reflectivity monitoring of GaN growth GaN生长的光谱反射率监测

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application Pub Date : 1997-08-11 DOI: 10.1109/LEOSST.1997.619257

R. Karlicek, C. Tran, M. Schurman, T. Salagaj, I. Ferguson

{"title":"Spectral reflectivity monitoring of GaN growth","authors":"R. Karlicek, C. Tran, M. Schurman, T. Salagaj, I. Ferguson","doi":"10.1109/LEOSST.1997.619257","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619257","url":null,"abstract":"Summary form only given. The use of in situ spectral reflectance for monitoring the growth of GaN is described. By using this method to measure the growth of GaN nucleation layers at several temperatures and reactor pressures, the activation energy for the growth of the GaN nucleation layer versus temperature was determined to be 126 kJ/mole, independent of growth pressure over the range of 55 to 200 torr. During the growth of GaN, the nucleation layer is too thin to be measured using interferometry, but reflectivity measurements during the initial stages of high temperature GaN growth immediately following nucleation layer deposition probe the initial GaN surface morphology. While the final, thick GaN films are specular, the amount of time needed to create a smooth reflective growing surface can range from 100 to 1000 seconds. The required time is inferred from the development of good GaN surface reflectivity with intense interference fringes for the growth of a simple undoped GaN layer.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114535148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0