{"title":"Novel mechanism for ultrafast optical nonlinearity in semiconductor laser amplifier using assist light","authors":"M. Tsurusawa, M. Usami, Y. Matsushima","doi":"10.1109/LEOSST.1997.619225","DOIUrl":null,"url":null,"abstract":"We have proposed and first demonstrated a novel mechanism for ultrafast optical nonlinearity in semiconductor laser amplifiers as saturable absorbers. We have obtained the reduced carrier lifetime of less than 70 ps by stimulated recombination due to a novel assist light. The further reduction of lifetime can be expected for shorter devices. This novel mechanism is promising for ultra-high repetition-rate gate function and noise reduction function, because there is little heat generation process through this fast stimulated emission.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOSST.1997.619225","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We have proposed and first demonstrated a novel mechanism for ultrafast optical nonlinearity in semiconductor laser amplifiers as saturable absorbers. We have obtained the reduced carrier lifetime of less than 70 ps by stimulated recombination due to a novel assist light. The further reduction of lifetime can be expected for shorter devices. This novel mechanism is promising for ultra-high repetition-rate gate function and noise reduction function, because there is little heat generation process through this fast stimulated emission.