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1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application最新文献

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Turn-on jitter in zero-biased single-mode vertical cavity surface emitting lasers 零偏单模垂直腔面发射激光器的导通抖动
1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application Pub Date : 1997-08-11 DOI: 10.1109/LEOSST.1997.619102
T. Czogalla, K. Petermann
{"title":"Turn-on jitter in zero-biased single-mode vertical cavity surface emitting lasers","authors":"T. Czogalla, K. Petermann","doi":"10.1109/LEOSST.1997.619102","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619102","url":null,"abstract":"An analytical expression and experimental results for the turn-on delay probability density function (PDF) of single mode vertical cavity surface emitting lasers (SM-VCSELs) are presented.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114239012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Super wide span optical frequency comb generation by nonlinear self-phase-modulation in an optical fiber 光纤中非线性自相位调制产生超宽跨度光频梳
1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application Pub Date : 1997-08-11 DOI: 10.1109/LEOSST.1997.619202
M. Kourogi, K. Imai, B. Widiatmoko, M. Ohtsu
{"title":"Super wide span optical frequency comb generation by nonlinear self-phase-modulation in an optical fiber","authors":"M. Kourogi, K. Imai, B. Widiatmoko, M. Ohtsu","doi":"10.1109/LEOSST.1997.619202","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619202","url":null,"abstract":"In summary, expansion of the optical frequency comb (OFC) span was realized by applying self-phase modulation, and the resulted span of the OFC was 47THz. The OFC is based on an electro-optical modulator enclosed in a high finesse optical cavity driven by microwaves with a constant frequency, generating more than one thousand equally spaced sidebands on large frequency span as wide as several THz from a cw laser light.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126549234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical amplifiers for optical networks 光网络用光放大器
1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application Pub Date : 1997-08-11 DOI: 10.1109/LEOSST.1997.619183
A. Srivastava, Y. Sun
{"title":"Optical amplifiers for optical networks","authors":"A. Srivastava, Y. Sun","doi":"10.1109/LEOSST.1997.619183","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619183","url":null,"abstract":"The erbium doped fiber amplifier (EDFA) is a key enabler of WDM transmission systems and wavelength routed optical networks. EDFAs are well suited to compensate the optical loss of network elements and transmission spans. Although the EDFA's are almost ideal in their characteristics, they are not quite perfect. Two effects which are critical in WDM networks and transmission systems are spectral gain non-uniformity and channel cross saturation in EDFAs.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"2012 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128081318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Monolithic integration of WDM components using QW shape modification 单片集成WDM组件使用QW形状修改
1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application Pub Date : 1997-08-11 DOI: 10.1109/LEOSST.1997.619169
E. Koteles
{"title":"Monolithic integration of WDM components using QW shape modification","authors":"E. Koteles","doi":"10.1109/LEOSST.1997.619169","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619169","url":null,"abstract":"We illustrate the performance of an actual WDM photonic integrated circuit (PIC); a two-wavelength, waveguide demultiplexer, fabricated using QW intermixing. They use the technique of spatially selective quantum well shape modification.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122217833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
850 nm VCSEL's with buried Al/sub x/O/sub y/ current apertures 850 nm的VCSEL具有埋藏Al/sub x/O/sub y/电流孔径
1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application Pub Date : 1997-08-11 DOI: 10.1109/LEOSST.1997.619083
Chao-Kun Lin, J. Geske, A. Bond, Won-Jin Choi, P. Dapkus
{"title":"850 nm VCSEL's with buried Al/sub x/O/sub y/ current apertures","authors":"Chao-Kun Lin, J. Geske, A. Bond, Won-Jin Choi, P. Dapkus","doi":"10.1109/LEOSST.1997.619083","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619083","url":null,"abstract":"Vertical cavity surface emitting lasers (VCSELs) with 850 nm emission wavelength are of great interest for short haul optical interconnections because of the compatibility with standard Si or GaAs based receivers. Low current and high wall plug efficiency VCSELs are needed. In this presentation, 850nm GaAs-AlGaAs DBR QW VCSELs using buried Al/sub x/O/sub y/ current apertures with low threshold current and peak optical output of 1.2 mW are reported.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131376351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monitoring of molecular species using near-infrared extended cavity diode lasers 利用近红外扩展腔二极管激光器监测分子种类
1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application Pub Date : 1997-08-11 DOI: 10.1109/LEOSST.1997.619214
H. Simonsen, J. Henningsen, T. Møgelberg
{"title":"Monitoring of molecular species using near-infrared extended cavity diode lasers","authors":"H. Simonsen, J. Henningsen, T. Møgelberg","doi":"10.1109/LEOSST.1997.619214","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619214","url":null,"abstract":"Near infrared diode lasers are attractive for spectroscopic applications due to their good spectral purity and low amplitude noise. They operate at room temperature with single-mode output power of milliwatts, and are adapted to fibre optic technology. Wavelength tunability is achieved using an extended cavity configuration. We report on a system based on high resolution infrared spectrometry in the 1.5-1.6 /spl mu/m region where several gases have overtone or combination absorption bands. In monitoring applications toxic and flammable gases like CO and H/sub 2/S are of particular interest. CO detection is aimed at detecting fires with special reference to smouldering combustion within the insulating layers of equipment, whereas H/sub 2/S is a major health hazard on oil rigs producing sour oil.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131938962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Long wavelength VCSELs with monolithic integrated GaInAsP/lnP mirror 带有单片集成GaInAsP/lnP反射镜的长波vcsel
1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application Pub Date : 1997-08-11 DOI: 10.1109/LEOSST.1997.619099
K. Streubel
{"title":"Long wavelength VCSELs with monolithic integrated GaInAsP/lnP mirror","authors":"K. Streubel","doi":"10.1109/LEOSST.1997.619099","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619099","url":null,"abstract":"A promising VCSEL structure for 1.55 /spl mu/m operation is a monolithic GaInAsP-InP structure for n-side mirror and active layer together with a dielectric p-side DBR. The conductive mirror helps to flatten the carrier profile and to dissipate the generated heat. Mesas can be etched either above or through the active region for electrical and optical confinement. The first VCSEL with a monolithic GaInAsP-InP mirror operated pulsed at 77K with a threshold current of 120mA.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132111201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
120/spl deg/C pulsed operation from a 1.55 /spl mu/m vertical-cavity laser 120/spl度/C脉冲操作从1.55 /spl μ m垂直腔激光器
1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application Pub Date : 1997-08-11 DOI: 10.1109/LEOSST.1997.619097
N. Margalit, Yiljen Chiu, E. Hegblom, P. Abraham, A. Black, J. Wesselmann, J. Bowers, E. Hu, K. Streubel
{"title":"120/spl deg/C pulsed operation from a 1.55 /spl mu/m vertical-cavity laser","authors":"N. Margalit, Yiljen Chiu, E. Hegblom, P. Abraham, A. Black, J. Wesselmann, J. Bowers, E. Hu, K. Streubel","doi":"10.1109/LEOSST.1997.619097","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619097","url":null,"abstract":"Summary form only given. In this presentation we will focus on the design of InP-InGaAsP MQW vertical cavity lasers to achieve high temperature operation. We have concluded that the key to such design is the reduction of round trip cavity loss. We show the low loss double-fused laterally oxidized structure used in our work. This structure allows for high mirror reflectivities using GaAs based mirrors reducing the necessary gain at threshold.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134361302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microwave generation with monolithic dual-wavelength DFB lasers 用单片双波长DFB激光器产生微波
1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application Pub Date : 1997-08-11 DOI: 10.1109/LEOSST.1997.619199
C. Laperle, M. Svilans, M. Poirier, M. Tetu
{"title":"Microwave generation with monolithic dual-wavelength DFB lasers","authors":"C. Laperle, M. Svilans, M. Poirier, M. Tetu","doi":"10.1109/LEOSST.1997.619199","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619199","url":null,"abstract":"Microwave beat signals were generated from a novel dual-wavelength DFB laser integrated with an active Y-junction coupler. This compact laser device is highly manufacturable due to its simple design which uses only the standard DFB process.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131794216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Vertical cavity lasers for printing 用于打印的垂直腔激光器
1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application Pub Date : 1997-08-11 DOI: 10.1109/LEOSST.1997.619110
R. Thornton
{"title":"Vertical cavity lasers for printing","authors":"R. Thornton","doi":"10.1109/LEOSST.1997.619110","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619110","url":null,"abstract":"The laser printer uses a rotating polygon mirror to scan a modulated laser beam across a photoconductive material, writing a latent image as an electrostatic charge pattern. This electrostatic charge pattern attracts toner particles which are then transferred to paper. Semiconductor lasers have been a key enabler in the development of small and low cost desktop laser printers.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114453256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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