{"title":"带有单片集成GaInAsP/lnP反射镜的长波vcsel","authors":"K. Streubel","doi":"10.1109/LEOSST.1997.619099","DOIUrl":null,"url":null,"abstract":"A promising VCSEL structure for 1.55 /spl mu/m operation is a monolithic GaInAsP-InP structure for n-side mirror and active layer together with a dielectric p-side DBR. The conductive mirror helps to flatten the carrier profile and to dissipate the generated heat. Mesas can be etched either above or through the active region for electrical and optical confinement. The first VCSEL with a monolithic GaInAsP-InP mirror operated pulsed at 77K with a threshold current of 120mA.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Long wavelength VCSELs with monolithic integrated GaInAsP/lnP mirror\",\"authors\":\"K. Streubel\",\"doi\":\"10.1109/LEOSST.1997.619099\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A promising VCSEL structure for 1.55 /spl mu/m operation is a monolithic GaInAsP-InP structure for n-side mirror and active layer together with a dielectric p-side DBR. The conductive mirror helps to flatten the carrier profile and to dissipate the generated heat. Mesas can be etched either above or through the active region for electrical and optical confinement. The first VCSEL with a monolithic GaInAsP-InP mirror operated pulsed at 77K with a threshold current of 120mA.\",\"PeriodicalId\":344325,\"journal\":{\"name\":\"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-08-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LEOSST.1997.619099\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOSST.1997.619099","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Long wavelength VCSELs with monolithic integrated GaInAsP/lnP mirror
A promising VCSEL structure for 1.55 /spl mu/m operation is a monolithic GaInAsP-InP structure for n-side mirror and active layer together with a dielectric p-side DBR. The conductive mirror helps to flatten the carrier profile and to dissipate the generated heat. Mesas can be etched either above or through the active region for electrical and optical confinement. The first VCSEL with a monolithic GaInAsP-InP mirror operated pulsed at 77K with a threshold current of 120mA.
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