N. Margalit, Yiljen Chiu, E. Hegblom, P. Abraham, A. Black, J. Wesselmann, J. Bowers, E. Hu, K. Streubel
{"title":"120/spl deg/C pulsed operation from a 1.55 /spl mu/m vertical-cavity laser","authors":"N. Margalit, Yiljen Chiu, E. Hegblom, P. Abraham, A. Black, J. Wesselmann, J. Bowers, E. Hu, K. Streubel","doi":"10.1109/LEOSST.1997.619097","DOIUrl":null,"url":null,"abstract":"Summary form only given. In this presentation we will focus on the design of InP-InGaAsP MQW vertical cavity lasers to achieve high temperature operation. We have concluded that the key to such design is the reduction of round trip cavity loss. We show the low loss double-fused laterally oxidized structure used in our work. This structure allows for high mirror reflectivities using GaAs based mirrors reducing the necessary gain at threshold.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOSST.1997.619097","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Summary form only given. In this presentation we will focus on the design of InP-InGaAsP MQW vertical cavity lasers to achieve high temperature operation. We have concluded that the key to such design is the reduction of round trip cavity loss. We show the low loss double-fused laterally oxidized structure used in our work. This structure allows for high mirror reflectivities using GaAs based mirrors reducing the necessary gain at threshold.