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Elevated temperature plasma doping technology for sub-50 nm SOI n-MOSFETs 50nm以下SOI n- mosfet的高温等离子体掺杂技术
The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI: 10.1109/IWJT.2004.1306759
W. Cho, C. Ahn, K. Im, Jong-Heon Yang, Jihun Oh, I. Baek, Seongjae Lee
{"title":"Elevated temperature plasma doping technology for sub-50 nm SOI n-MOSFETs","authors":"W. Cho, C. Ahn, K. Im, Jong-Heon Yang, Jihun Oh, I. Baek, Seongjae Lee","doi":"10.1109/IWJT.2004.1306759","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306759","url":null,"abstract":"A novel plasma doping technique for fabricating a nano-scale silicon-on-insulator (SOI) MOSFETs have been investigated. The S/D extensions of the tri-gate structure. SOI n-MOSFETs were formed by using elevated temperature plasma doping method. The activation annealing after plasma doping was excluded to minimize the diffusion of dopants, which resulted in laterally abrupt S/D junction. We obtained low damage shallow junctions and sheet resistance of 920 /spl Omega/ //spl square/ by the elevated temperature plasma doping of 527/spl deg/C. A tri-gate structure SOT n-MOSFET with a gate length of Sub-50 nm was successfully fabricated and revealed suppressed short channel effects.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122360557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low energy implantation technology with decaborane molecular ion beam 十硼烷分子离子束低能注入技术
The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI: 10.1109/IWJT.2004.1306750
S. Umisedo, N. Hamamoto, S. Sakai, M. Tanjyo, N. Nagai, M. Naito
{"title":"Low energy implantation technology with decaborane molecular ion beam","authors":"S. Umisedo, N. Hamamoto, S. Sakai, M. Tanjyo, N. Nagai, M. Naito","doi":"10.1109/IWJT.2004.1306750","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306750","url":null,"abstract":"Advanced sub-micron device fabrication with the Ultra Shallow Junction requires below 1 keV Boron doping. Modem ion implanters which have a capability of ion mass analysis, energy contaminants elimination, and implant angle control have been developed for precisely controlled ion implantation. However, it is well known that as the energy goes down the beam diverges due to the space charge effect, which results in the loss of the beam current and the angle deviation of each ion. It is expected to overcome this effect by using a molecular ion beam, such as decaborane (B/sub 10/H/sub 14/). This paper presents Nissin's latest low energy Boron implantation technology using decaborane molecule, which is developed vigorously as a promising future implantation technology.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122381896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ge quantum dot infrared photo-detector Ge量子点红外探测器
The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI: 10.1109/IWJT.2004.1306847
Wang Minsheng, Wei Rongshan, Deng Ning, C. Peiyi
{"title":"Ge quantum dot infrared photo-detector","authors":"Wang Minsheng, Wei Rongshan, Deng Ning, C. Peiyi","doi":"10.1109/IWJT.2004.1306847","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306847","url":null,"abstract":"In our experiments, vertical aligned superlattices of multiple self-assembled Ge island layers separated by Si spacer layers on Si(100) substrates have been grown by ultra high vacuum chemical vapor deposition system (UHV/CVD). The photoluminescence of material was excited with 500nm laser and measured at 10 K, the PL peaks representing Ge islands and Si wetting layers were observed at 825 and 1010 mev respectively. Based on this material, samples of quantum dot infrared photo-detectors (QDIP), with p-i-n junctions, were fabricated. The responsivity of the detectors was measured with various semiconductor light-emitting diodes and semiconductor lasers. At room temperature and at -3V applied bias, for samples with 245 /spl times/ 245 /spl mu/m/sup 2/ large window and dark current I/sub d//spl sim/10/sup -9/A, the maximum photocurrent responsivity of 0.52 A/W at 774 nm was found, and 0.043mA/W at 1.31 /spl mu/m. Higher responsivities can be obtained with a waveguide geometry and optimization of the whole structure, such as thickness of layers and type of doping.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114904481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Surface control of interstitial behavior for improved ultrashallow junction formation 改善超浅结形成的间隙行为的表面控制
The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI: 10.1109/IWJT.2004.1306764
E. Seebauer
{"title":"Surface control of interstitial behavior for improved ultrashallow junction formation","authors":"E. Seebauer","doi":"10.1109/IWJT.2004.1306764","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306764","url":null,"abstract":"There is increasing evidence that surface proximity effects must be incorporated into models for transient enhanced diffusion (TED). The present work examines the previously unrecognized influence that near-surface band bending can have on dopant profiles. Experiments employ the optical technique of photoreflectance to show that band bending exists at the Si-SiO/sub 2/ interface just after implantation. The effects of such band bending are investigated numerically using a simulator whose rate parameters have been developed from literature data using Maximum Likelihood (ML) estimation together with multivariate statistics to quantify accuracy. The resulting simulator yields excellent fits of SIMS profiles with no freely adjustable parameters, and shows that band bending transforms interfaces into reflectors of charged interstitials (i.e., no flux), even if the interface would otherwise serve as a good sink for these defects. This transformation deepens the junction significantly and also induces the pileup of dopant very close to the interface.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130316305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Overview of the prospects of ultra-rapid thermal process for advanced CMOSFETs 先进cmosfet超快速热工艺发展前景综述
The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI: 10.1109/IWJT.2004.1306748
K. Suguro, T. Ito, K. Matsuo, T. Iinuma, K. Nishinohara
{"title":"Overview of the prospects of ultra-rapid thermal process for advanced CMOSFETs","authors":"K. Suguro, T. Ito, K. Matsuo, T. Iinuma, K. Nishinohara","doi":"10.1109/IWJT.2004.1306748","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306748","url":null,"abstract":"This paper presents ultra shallow junction with low resistance in 45-65nm technology node. Rapid thermal annealing is required to form ultra-shallow, low sheet resistance and lower dislocation density for satisfying the pn junction leakage specification of mobile LSIs. In order to minimize the annealing time at high temperatures, various kinds of ultra-rapid thermal annealing technology such as advanced spike RTA, laser annealing, SPE, flash lamp annealing are compared. Issues of this technology are simultaneously accomplishing ultrashallow Xj, lower sheet resistance and lower crystal damage density for fabricating advanced MOSFETs. By optimizing various process conditions, we can successfully obtain ultra shallow p+/n and n+/p junction of less than 10 nm. In this paper, we overview the prospects for ultra-rapid thermal process for advanced CMOSFETs.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123515496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A novel SiGe/Si hetero-junction power diode utilizing an ideal ohmic contact 一种利用理想欧姆接触的新型SiGe/Si异质结功率二极管
The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI: 10.1109/IWJT.2004.1306851
Ma Li, G. Yong
{"title":"A novel SiGe/Si hetero-junction power diode utilizing an ideal ohmic contact","authors":"Ma Li, G. Yong","doi":"10.1109/IWJT.2004.1306851","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306851","url":null,"abstract":"Novel structure to realize an ideal ohmic contact with the n/sup +/ region substituted by p/sup +/-n/sup +/ mosaic structure for the p/sup +/(SiGe)-n/sup -/-n/sup +/ hetero-junction switching power diodes is proposed. The reverse recovery characteristics of p/sup +/(SiGe)-n/sup -/-n/sup +/ diodes utilizing an ideal ohmic contact are much more improved but not notably sacrificing the forward voltage drop. there are about two thirds shorter in the reverse recovery time and a half shorter in peak reverse current than conventional p/sup +/(SiGe)-n/sup -/-n/sup +/ diodes, furthermore, far lower leakage current is exhibited. The new kind of high-speed and soft p/sup +/(SiGe)-n/sup -/-n/sup +/ diode is easily incorporated into monolithic combination with transistors, and is useful for various power applications. These improvements are achieved without resorting lifetime killing and thus the devices can be easily integrated into power ICs.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114793407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A study of antimony or arsenic implanted extensions with or without xenon pre-amorphization 有或没有氙预非晶化的锑或砷植入延伸的研究
The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI: 10.1109/IWJT.2004.1306751
A. Pouydebasque, B. Dumont, R. El Farhanel, F. Boeuf, A. Muller, A. Hafimaoui, T. Skotnicki
{"title":"A study of antimony or arsenic implanted extensions with or without xenon pre-amorphization","authors":"A. Pouydebasque, B. Dumont, R. El Farhanel, F. Boeuf, A. Muller, A. Hafimaoui, T. Skotnicki","doi":"10.1109/IWJT.2004.1306751","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306751","url":null,"abstract":"We present in this paper a detailed analysis of the electrical behavior of NMOS transistors where the source/drain extensions (SDE) were doped either by As, Xe pre-amorphizing implant (PAI) + As, Sb or Xe PAI + Sb. The Sb splits show better threshold voltage characteristics in comparison with As: delayed Vt rolldown, reduced Short Channel Effect (SCE) and Drain Induced Barrier Lowering (DIBL). Moreover, the I/sub on//I/sub off/ trade-off analysis reveals that more than 10% improvement in the performance can be obtained with Sb compared to the As reference that is due to a reduction in the access resistance R/sub access/. This makes Sb a very promising candidate for N-type Ultra-Shallow Junctions (USJ) for future CMOS generations. Xe PAI induces excellent sub-threshold characteristics due to the lowering of the junction depth Xj; however the I/sub on/ is dramatically reduced in this case because of much higher R/sub access/.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133282291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Simulation of a near infrared light-activated 4H-SiC Darlington transistor switches 近红外光激活4H-SiC达林顿晶体管开关的仿真
The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI: 10.1109/IWJT.2004.1306836
H. Pu, Zhiming Chen, Xianfeng Feng, B. Ma, Liucheng Li
{"title":"Simulation of a near infrared light-activated 4H-SiC Darlington transistor switches","authors":"H. Pu, Zhiming Chen, Xianfeng Feng, B. Ma, Liucheng Li","doi":"10.1109/IWJT.2004.1306836","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306836","url":null,"abstract":"The novel near infrared light-activated Darlington heterojunction transistor power switch made of SiC has been proposed, in which SiCGe/SiC pn is employed to produce a base current by means of optical illumination. By using two-dimensional numerical simulation MEDICI, the SiCGe/SiC photodetector can be triggered by a near infer-red laser beam if the composition parameters of the Sil-x-yCxGey have been chosen properly. Performance of the near Infrared light-activated power switch was simulated, which has shown that the light-activated device has very good switching characteristics at 0.85/spl mu/m for optical intensity of 1.0 Watt/cm2. Based on our simulation results, the distribution of current density predicts that the auxiliary transistor is turned on at first by a low density of photocurrent and then the main transistor is turned on. The collector current of the device in the on-state is concentrated in a region underneath the main emitter.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114299560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ti/Al/Ni/Au and Ti/Al/Pt/Au multi-layer ohmic contacts on Al/sub x/Ga/sub 1-x/N/GaN heterostructures Al/sub x/Ga/sub 1-x/N/GaN异质结构的Ti/Al/Ni/Au和Ti/Al/Pt/Au多层欧姆接触
The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI: 10.1109/IWJT.2004.1306788
H.M. Zhou, B. Shen, D.J. Chen, N. Tang, T.S. Chen, G. Jiao, L. Ru, R. Zhang, Y. Shi, Y.D. Zheng
{"title":"Ti/Al/Ni/Au and Ti/Al/Pt/Au multi-layer ohmic contacts on Al/sub x/Ga/sub 1-x/N/GaN heterostructures","authors":"H.M. Zhou, B. Shen, D.J. Chen, N. Tang, T.S. Chen, G. Jiao, L. Ru, R. Zhang, Y. Shi, Y.D. Zheng","doi":"10.1109/IWJT.2004.1306788","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306788","url":null,"abstract":"The ohmic contacts of Ti/Al/Ni/Au and Ti/Al/Pt/Au multi-layer on unintentionally-doped Al/sub 0.22/Ga/sub 0.78/N/GaN heterostructures have been investigated. The specific contact resistivities of 1.26/spl times/10/sup -6/ /spl Omega//spl middot/cm/sup 2/ for Ti/Al/Ni/Au contact and 1.97 /spl times/ 10/sup -5/ /spl Omega//spl middot/cm/sup 2/ for Ti/Al/Pt/Au contact were obtained. It is found that the Pt element in Ti/Al/Pt/Au multi-layer influent the diffusion of Al atom into the Au layer, which results in the higher contact resistivity of Ti/Al/Pt/Au contact than that of Ti/Al/Ni/Au one. The formation of excellent ohmic contact on the Al/sub 0.22/Ga/sub 0.78/N/GaN heterostructures is attributed to the existing of a compatible barrier between the metal electrode and the carrier channel at the Al/sub 0.22/Ga/sub 0.78/N/GaN hetero-interface. The width of the barrier depends on the annealing temperature and duration.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125285068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Anti-weak localization of the two dimensional electron gas in modulation-doped Al/sub x/Ga/sub 1-x/N/GaN single quantum well 调制掺杂Al/sub x/Ga/sub 1-x/N/GaN单量子阱中二维电子气体的反弱局域化
The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI: 10.1109/IWJT.2004.1306794
J. Lu, B. Shen, N. Tang, D.J. Chen, R. Zhang, Y. Shi, Y.D. Zheng
{"title":"Anti-weak localization of the two dimensional electron gas in modulation-doped Al/sub x/Ga/sub 1-x/N/GaN single quantum well","authors":"J. Lu, B. Shen, N. Tang, D.J. Chen, R. Zhang, Y. Shi, Y.D. Zheng","doi":"10.1109/IWJT.2004.1306794","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306794","url":null,"abstract":"The weak-localization of the two-dimensional electron gas (2DEG) in a modulation-doped Al/sub 0.22/Ga/sub 0.78/N/GaN single quantum well has been investigated through the magnetoresistance measurements. The elastic scattering time /spl tau//sub e/, dephasing time /spl tau//sub /spl phi// and spin-orbit(s-o) scattering time /spl tau//sub so/ at various temperatures are obtained. When the second subband in the triangular quantum well at the heterointerface is occupied by the 2DEG, the anti-weak localization is observed clearly, which is due to the strong spin-orbit interaction. The spin-orbit effect dominates the quantum correction of the conductivity in the upper subband. The intersubband scattering becomes stronger with increasing temperature.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127263385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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