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The Fourth International Workshop on Junction Technology, 2004. IWJT '04.最新文献

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The inhomogeneity of Co/p-poly-Si/sub 0.84/Ge/sub 0.16/ Schottky contact Co/p- si /sub 0.84/Ge/sub 0.16/ Schottky接触的非均匀性
The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI: 10.1109/IWJT.2004.1306784
Guang-Wei Wang, G. Ru, X. Qu, Bingzong Li
{"title":"The inhomogeneity of Co/p-poly-Si/sub 0.84/Ge/sub 0.16/ Schottky contact","authors":"Guang-Wei Wang, G. Ru, X. Qu, Bingzong Li","doi":"10.1109/IWJT.2004.1306784","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306784","url":null,"abstract":"The Schottky junction Co/p-poly-SiGe was formed by deposition of Co on p-poly-SiGe thin film through ion beam sputtering (IBS) technique. Inhomogeneity of the Co/p-poly-SiGe contact was studied by I-V-T method in a wide temperature range. The parameters of the Schottky structure can be extracted from the thermionic emission model precisely. Our results show that both the Schottky barrier height and ideality factor are strongly temperature dependent and weakly bias dependent. It is ascribed to the spatial inhomogeneity of the Co/p-poly-SiGe interface. And it may be helpful to can explain some observed deviations from the ideal metal-semiconductor contact mode.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122944659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of thin layers in shallow junction technology by quadrupole SIMS 用四极SIMS表征浅结技术中的薄层
The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI: 10.1109/IWJT.2004.1306767
J. Maul, U. Ehrke
{"title":"Characterization of thin layers in shallow junction technology by quadrupole SIMS","authors":"J. Maul, U. Ehrke","doi":"10.1109/IWJT.2004.1306767","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306767","url":null,"abstract":"This paper reports on routine SIMS applications in SiGe EPI and on Oxynitride process control including the quality control of the SIMS data itself. As an example an advanced SIMS protocol will be discussed for nm-thin high-k layer metrology. This protocol is based on low energy oxygen beam analysis, which provides improved quantification of the N distribution. We will present a new method, which allows accurate location of the interface position and measurement of the SiON layer thickness under this protocol. SiON production process variations have been investigated and will be reported as well.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132649138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Self-consistent numerical model and optimization of two-dimensional electron gases for AlGaN/GaN HEMT AlGaN/GaN HEMT二维电子气体自洽数值模型及优化
The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI: 10.1109/IWJT.2004.1306791
Ma Long, Wang Yan, Yu Zhiping, Tian Li-lin
{"title":"Self-consistent numerical model and optimization of two-dimensional electron gases for AlGaN/GaN HEMT","authors":"Ma Long, Wang Yan, Yu Zhiping, Tian Li-lin","doi":"10.1109/IWJT.2004.1306791","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306791","url":null,"abstract":"AlGaN/GaN HEMTs, also referred to MODFETs, have been a subject of intense recent investigation and have emerged as attractive candidates for high voltage, high-power operation at microwave frequencies for its high peak electron velocity, saturation velocity, saturation velocity, thermal stability and breakdown fields properties. In this paper, we take account of spontaneous and piezoelectric polarization effect at the hetero-interface in AlGaN/GaN HEMT device and one-dimensional Poisson-Schrodinger equations using nonuniform mesh are solved self-consistently, from which the AlGaN/GaN heterostructure conduction band and the 2DEG density are investigated. The dependences of 2DEG characteristics on the Al mole fraction, the thickness of each layer, the donor concentration and the gate voltage are investigated through simulation, respectively. The influence of spacer layer width on the 2DEG density is calculated for the first time.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"48 8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116374392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Monte Carlo amorphous ion implantation possibility algorithm 蒙特卡罗非晶离子注入可能性算法
The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI: 10.1109/IWJT.2004.1306863
Jinyu Zhang, Shi Xiaokang, K. Suzuki, H. Oka
{"title":"Monte Carlo amorphous ion implantation possibility algorithm","authors":"Jinyu Zhang, Shi Xiaokang, K. Suzuki, H. Oka","doi":"10.1109/IWJT.2004.1306863","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306863","url":null,"abstract":"A novel splitting algorithm called MC-AIPA is proposed for MC (Monte Carlo) ion implantation simulation into amorphous Silicon material. The injection ion is split two virtual ions during each nuclear scattering with target atom. The virtual ions have different energy and weight which is different from other splitting scheme. The high energy virtual ion still runs but the rest position of the low energy virtual ion can be acquired by a pre-calculated database called LERPD (Low Energy Rest Position Database). About 3 orders statistic enhancement can be acquired compared with that of no splitting algorithm in almost the same CPU time.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121132436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Recent development of nitride semiconductor electronic devices for next generation wireless communications 下一代无线通信用氮化半导体电子器件的最新发展
The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI: 10.1109/IWJT.2004.1306747
Y. Nanishi
{"title":"Recent development of nitride semiconductor electronic devices for next generation wireless communications","authors":"Y. Nanishi","doi":"10.1109/IWJT.2004.1306747","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306747","url":null,"abstract":"This paper reviews potential and present status of AlGaN/GaN HFETs. High potential of these devices for high-power and high-frequency operation are explained from the physical properties of GaN and AlGaN/GaN hetero-structures. Present status of theses device performances are briefly introduced. Over 150 W operation at 2 GHz and 3.2 W operation at 30 GHz has been already achieved so far, verifying high-potential of this :material system. Issues for further improvements of these device performances as well as issues for production level technology are discussed.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126822807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Device linearity enhancement of InGaP/InGaAs/GaAs camel-gate p-channel pseudomorphic high electron mobility transistor InGaP/InGaAs/GaAs骆驼栅p沟道伪晶高电子迁移率晶体管器件线性度的增强
The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI: 10.1109/IWJT.2004.1306798
J. Tsai, S. Chiu, Ying-Cheng Chu, King-Poul Zhu
{"title":"Device linearity enhancement of InGaP/InGaAs/GaAs camel-gate p-channel pseudomorphic high electron mobility transistor","authors":"J. Tsai, S. Chiu, Ying-Cheng Chu, King-Poul Zhu","doi":"10.1109/IWJT.2004.1306798","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306798","url":null,"abstract":"A high-performance InGaP/InGaAs/GaAs p-channel pseudomorphic modulation-doped field effect transistor based on p/sup +/-GaAs/n/sup +/-InGaP/p-InGaP camel-like gate structure is demonstrated. Due to the p-n depletion of the camel-like gate and the presence of relatively large /spl Delta/Ev at InGaP/InGaAs heterostructure, an extremely large gate turn-on voltage than 2 V is measured. For a 1/spl times/100 /spl mu/m/sup 2/ device, the experimental results show a maximum saturation current density of -345 mA/mm and a widely broad gate voltage swing than 4 V with 80 % maximum transconductance. Furthermore, the f/sub T/ and f/sub max/ values are 3.1 and 4.8 GHz, respectively.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122325955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Research for SiGe HBT
The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI: 10.1109/IWJT.2004.1306846
Rongkan Liu, D. Liu, U. Koenig, A. Gruhle, Jing Zhang, Kaicheng Li, Luncai Liu, H. Kibbel, U. Zeiler, Yukui Liu, Shiliu Xu, G. Hu
{"title":"Research for SiGe HBT","authors":"Rongkan Liu, D. Liu, U. Koenig, A. Gruhle, Jing Zhang, Kaicheng Li, Luncai Liu, H. Kibbel, U. Zeiler, Yukui Liu, Shiliu Xu, G. Hu","doi":"10.1109/IWJT.2004.1306846","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306846","url":null,"abstract":"In this paper, a SiGe HBT was described, which was based on a unique process technology. To characterize the SiGe HBT, HP8510C network analyzer, HP83650A synthetic signal sources, HP8517b S parameter measuring systems etc. have been used for radio frequency performances. The measurements showed the satisfactory results. The SiGe HBT cutoff frequency f/sub T/ is 108GHz, and the maximum oscillation frequency f/sub Max/ is 157GHz.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133051967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
I-V-T studies on ternary silicide Co/sub 1-x/Ni/sub x/Si/sub 2//n-Si Schottky contacts 三元硅化物Co/sub - 1-x/Ni/sub -x/ Si/sub - 2/ n-Si肖特基触点的I-V-T研究
The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI: 10.1109/IWJT.2004.1306782
Shiyang Zhu, G. Ru, X. Qu, R. Van Meirhaeghe, S. Forment, Bingzong Li
{"title":"I-V-T studies on ternary silicide Co/sub 1-x/Ni/sub x/Si/sub 2//n-Si Schottky contacts","authors":"Shiyang Zhu, G. Ru, X. Qu, R. Van Meirhaeghe, S. Forment, Bingzong Li","doi":"10.1109/IWJT.2004.1306782","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306782","url":null,"abstract":"Ternary silicide Co/sub 1-x/Ni/sub x/Si/sub 2//n-Si(100) contacts with different x value were formed by solid phase reaction of Co/Ni bilayer and substrate Si. Their Schottky barrier properties were studied using the current voltage-temperature (I-V-T) measurements range from 100 to 300K. The I-V-T curves show three typical types, which can be related to the barrier height inhomogeneity. A clean trend is found that the barrier height inhomogeneity increases with increasing the annealing temperature. Ni incorporation reduces not only the silicidation temperature, but also the temperature at which the contact becomes inhomogeneity.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131837585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multiple-pulse laser annealing of boron-implanted preamorphized silicon and the process optimization 硼注入预非晶硅的多脉冲激光退火及工艺优化
The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI: 10.1109/IWJT.2004.1306749
B. Cho, D. Poon, L. Tan, M. Bhat, A. See
{"title":"Multiple-pulse laser annealing of boron-implanted preamorphized silicon and the process optimization","authors":"B. Cho, D. Poon, L. Tan, M. Bhat, A. See","doi":"10.1109/IWJT.2004.1306749","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306749","url":null,"abstract":"Advantages of multiple-pulse Laser Thermal Annealing (LTA) with a moderate energy fluence on preamorphized silicon are described. Re-distribution of laser annealed boron junction during subsequent RTA is also studied. A method to optimize the multiple-pulse LTA condition is proposed. It is also demonstrated that Hall analysis can be used as a quick evaluation tool of the integrity of the junctions.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134205953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Infusion doping for USJ formation 输注兴奋剂用于USJ的形成
The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI: 10.1109/IWJT.2004.1306756
J. Hautala, J. Borland, M. Tabat, W. Skinner
{"title":"Infusion doping for USJ formation","authors":"J. Hautala, J. Borland, M. Tabat, W. Skinner","doi":"10.1109/IWJT.2004.1306756","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306756","url":null,"abstract":"We report for the first time results on infusion doping of boron for ultra shallow junctions (USJ). Using B/sub 2/H/sub 6/ or BF/sub 3/ source gas, the resulting USJ boron dopant profile measured by SIMS shows no evidence of channeling with extreme abruptness of <2.5nm/decade for a 12 nm shallow junction. Infusion doping shows a power log to the 1/3 relationship between energy to junction depth in contrast to the traditional linear fit observed with ion implantation due to nuclear stopping power effects. Boron surface doping levels of 1-2E22/cm/sup 3/ for 2E16/cm/sup 2/ doses were achieved. Dopant activation using low temperature furnace annealing from 450/spl deg/C to 950/spl deg/C were compared using standard 4PP and non-penetrating elastic material 4PP for sheet resistance measurements,on these USJ structures. Also, electrically active dopant profiling was conducted using spreading resistance profile (SRP) for USJ junction depth (Xj) comparison to SIMS. Use of amorphizing implantation resulted in lower Rs values after low temperature SPE annealing.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123715552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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