Defense, Security, and Sensing最新文献_第8页

Influence of pixel geometry on the 1/f noise coefficient 像素几何形状对1/f噪声系数的影响

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2016250

F. Généreux, J. Paultre, B. Tremblay, F. Provençal, C. Alain

引用次数: 8

OTHELLO: a novel SWIR dual-band detection system and its applications 一种新型SWIR双波段检测系统及其应用

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2019202

Gil A. Tidhar, O. Aphek, E. Cohen

引用次数: 1

Low-frequency noise behavior at reverse bias region in InAs/GaSb superlattice photodiodes on mid-wave infrared 中波红外InAs/GaSb超晶格光电二极管反向偏置区的低频噪声行为

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2016388

T. Tansel, K. Kutluer, A. Muti, O. Salihoglu, A. Aydinli, Rasit Turan

{"title":"Low-frequency noise behavior at reverse bias region in InAs/GaSb superlattice photodiodes on mid-wave infrared","authors":"T. Tansel, K. Kutluer, A. Muti, O. Salihoglu, A. Aydinli, Rasit Turan","doi":"10.1117/12.2016388","DOIUrl":"https://doi.org/10.1117/12.2016388","url":null,"abstract":"We describe a relationship between the noise characterization and activation energy of InAs/GaSb superlattice Mid-Wavelength-Infrared photodiodes for different passivation materials applied to the device. The noise measurements exhibited a frequency dependent plateau (i.e. 1/f-noise characteristic) for unpassivated as well as Si3N4 passivated samples whereas 1/f-type low noise suppression (i.e. frequency independent plateau) with a noise current reduction of more than one order of magnitude was observed for SiO2 passivation. For reverse bias values below -0.15V, the classical Schottky-noise calculation alone did not appear to describe the noise mechanism in a SL noise behavior, which shows a divergence between theoretically and experimentally determined noise values. We identify that, the additional noise appears, with and without passivation, at the surface activation energy of < 60 meV and is inversely proportional to the reverse bias. This is believed to be caused by the surface dangling-bonds (as well as surface states) whose response is controlled by the applied reverse bias. The calculated noise characteristics showed a good agreement with the experimental data.","PeriodicalId":338283,"journal":{"name":"Defense, Security, and Sensing","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131076187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Pyroelectric sensor arrays for detection and thermal imaging 用于探测和热成像的热释电传感器阵列

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2014239

A. Holden

引用次数: 8

Uncooled infrared detector with 12μm pixel pitch video graphics array 带有12μm像素间距视频图形阵列的非冷却红外探测器

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2013690

T. Endoh, S. Tohyama, T. Yamazaki, Yutaka Tanaka, K. Okuyama, Seiji Kurashina, Masaru Miyoshi, Kouji Katoh, Takashi Yamamoto, Y. Okuda, Tokuhito Sasaki, Haruo Ishizaki, T. Nakajima, K. Shinoda, T. Tsuchiya

{"title":"Uncooled infrared detector with 12μm pixel pitch video graphics array","authors":"T. Endoh, S. Tohyama, T. Yamazaki, Yutaka Tanaka, K. Okuyama, Seiji Kurashina, Masaru Miyoshi, Kouji Katoh, Takashi Yamamoto, Y. Okuda, Tokuhito Sasaki, Haruo Ishizaki, T. Nakajima, K. Shinoda, T. Tsuchiya","doi":"10.1117/12.2013690","DOIUrl":"https://doi.org/10.1117/12.2013690","url":null,"abstract":"Uncooled infrared detectors with 12μm pixel pitch video graphics array (VGA) have been developed. To improve the signal to noise ratio (SNR) for 12μm pixel pitch, a highly sensitive bolometer material, an advanced pixel structure for thermal isolation and a newly designed read-out IC (ROIC) have been also developed. The bolometer material has been improved by using vanadium niobate. Over a wide range of temperature, temperature coefficient of resistance (TCR) is achieved higher level than -3.6%/K, which is 2 times higher than that for the conventional bolometer material. For thermal isolation, thermal conductance (Gth) value for the new pixel structure, fabricated by using triple level sacrificial layer process, is estimated to be 5nW/K, which is 1/5 times lower than that for the conventional pixel structure. On the other hand, since the imaging area is reduced by the pixel pitch, the uniformity of pixel can be improved. This enables to remove the non-uniformity correction (NUC) circuit in the ROIC. Removal of this circuit is effective for low power and low noise. This 12μm pixel pitch VGA detector is packaged in a compact (24 × 24 × 6.5 mm) and lightweight (11g) ceramic package. In addition, it has been incorporated in a newly developed prototype miniature imager. The miniature imager has dimension of 25(H) ×25(W) ×28(L) mm and weight of 30g. This imager is compact and small enough to fit in your hand. Hereafter, this imager is greatly expected to be applied to mobile systems.","PeriodicalId":338283,"journal":{"name":"Defense, Security, and Sensing","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126147291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 17

Frequency-selective surface coupled metal-oxide-metal diodes 频率选择表面耦合金属-氧化物-金属二极管

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2014777

E. Kinzel, Robert L. Brown, J. Ginn, B. Lail, B. Slovick, G. Boreman

{"title":"Frequency-selective surface coupled metal-oxide-metal diodes","authors":"E. Kinzel, Robert L. Brown, J. Ginn, B. Lail, B. Slovick, G. Boreman","doi":"10.1117/12.2014777","DOIUrl":"https://doi.org/10.1117/12.2014777","url":null,"abstract":"Metal-Oxide-Metal diodes offer the possibility of directly rectifying infrared radiation. To be effective for sensing or energy harvesting they must be coupled to an antenna which produces intense fields at the diode. While antennas significantly increase the effective capture area of the MOM diode, it is still limited and maximizing the captured energy is still a challenging goal. In this work we investigate integrating MOM diodes with a slot antenna Frequency Selective Surface (FSS). This maximizes the electromagnetic capture area while minimizing the transmission line length which helps reduce losses because metal losses are much lower at DC than at infrared frequencies. Our design takes advantage of a single self-aligned patterning step using shadow evaporation. The structure is optimized at 10.6 µm to have less than 2% reflection (polarization sensitive) and simulations predict that 70% of the incident energy is dissipated into the oxide layer. Initial experimental results fabricated with e-beam lithography are presented and the diode coupled FSS is shown to produce a polarization sensitive unbiased DC short circuit current. This work is promising for both infrared sensing and imaging as well as direct conversion of thermal energy.","PeriodicalId":338283,"journal":{"name":"Defense, Security, and Sensing","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130068508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A miniature ruggedized fast frame rate infrared sensor module for hostile fire detection and industrial applications 用于敌方火力探测和工业应用的微型加固快速帧速率红外传感器模块

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2015861

A. Ashcroft, L. Richardson, R. Ash, P. Thorne, David Isgar, D. Jeckells, Martin Stevens, Tim Davey, Asim Malik

引用次数: 3

Time-resolved photoluminescence study of carrier recombination and transport in type-II superlattice infrared detector materials ⅱ型超晶格红外探测器材料中载流子复合和输运的时间分辨光致发光研究

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2016202

B. Connelly, G. Metcalfe, H. Shen, M. Wraback

{"title":"Time-resolved photoluminescence study of carrier recombination and transport in type-II superlattice infrared detector materials","authors":"B. Connelly, G. Metcalfe, H. Shen, M. Wraback","doi":"10.1117/12.2016202","DOIUrl":"https://doi.org/10.1117/12.2016202","url":null,"abstract":"Time-resolved photoluminescence (TRPL) is used to study the minority carrier lifetime in type-II superlattice (T2SL) infrared detector materials to investigate the recombination mechanisms, trap states and transport properties that currently limit their performance. Measurements of carrier lifetime have shown that InAs/Ga1-xInxSb T2SLs are dominated by non-radiative Shockley-Read-Hall (SRH) recombination, resulting in short minority carrier lifetimes (10’s of nanoseconds at 77 K). A trap energy of ~60 meV above the valence band is identified in mid-wavelength infrared n-type InAs/Ga1-xInxSb T2SLs, where trap saturation (non-exponential decay) is observed under high injection levels due to a significantly faster hole capture rate than electron capture rate. Lifetime measurements in “Ga-free” InAs/InAs1-xSbx T2SLs exhibit an order-of-magnitude increase in lifetime (100’s of nanoseconds at 77 K) with contributions from both radiative and non-radiative recombination. This improvement is attributed to the reduction of non-radiative recombination centers from the superlattice with the elimination of Ga and suggests that the SRH trap(s) limiting the carrier lifetime of InAs/Ga1-xInxSb T2SLs is native to the Ga1-xInxSb layer. Additionally, radiative recombination is observed in an InAs/GaSb T2SL using a sub-bandgap CW laser to saturate the SRH recombination centers, yielding a radiative lifetime of ~140 ns at 77 K. Since carrier transport is a concern in Ga-free T2SLs, it is investigated by studying samples grown with and without barriers (to contain injected carriers to the absorber region). It is determined that carrier transport is poor in InAs/InAs1-xSbx T2SLs because negligible differences are observed in the carrier lifetime.","PeriodicalId":338283,"journal":{"name":"Defense, Security, and Sensing","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131882392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 10

Defects and noise in Type-II superlattice infrared detectors ii型超晶格红外探测器的缺陷和噪声

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2015926

M. Walther, A. Wörl, V. Daumer, R. Rehm, L. Kirste, F. Rutz, J. Schmitz

{"title":"Defects and noise in Type-II superlattice infrared detectors","authors":"M. Walther, A. Wörl, V. Daumer, R. Rehm, L. Kirste, F. Rutz, J. Schmitz","doi":"10.1117/12.2015926","DOIUrl":"https://doi.org/10.1117/12.2015926","url":null,"abstract":"To examine defects in InAs/GaSb type-II superlattices we investigated GaSb substrates and epitaxial InAs/GaSb layers by synchrotron white beam X-ray topography to characterize the distribution of threading dislocations. Those measurements are compared with wet chemical etch pit density measurements on GaSb substrates and InAs/GaSb type-II superlattices epitaxial layer structures. The technique uses a wet chemical etch process to decorate threading dislocations and an automated optical analyzing system for mapping the defect distribution. Dark current and noise measurements on processed InAs/GaSb type-II superlattice single element photo diodes reveal a generation-recombination limited dark current behavior without contributions by surface leakage currents for midwavelength infrared detectors. In the white noise part of the noise spectrum, the extracted diode noise closely matches the theoretically expected shot noise behavior. For diodes with an increased dark current in comparison to the dark current of generation-recombination limited material, the standard shot-noise model fails to describe the noise experimentally observed in the white part of the spectrum. Instead, we find that McIntyre’s noise model for avalanche multiplication processes fits the data quite well. We suggest that within high electric field domains localized around crystallographic defects, electrons initiate avalanche multiplication processes leading to increased dark current and excess noise.","PeriodicalId":338283,"journal":{"name":"Defense, Security, and Sensing","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121113770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Next generation cooled long range thermal sights with minimum size, weight, and power 下一代冷却远程热瞄准具最小的尺寸，重量和功率

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2015516

R. Breiter, T. Ihle, J. Wendler, I. Rühlich, J. Ziegler

{"title":"Next generation cooled long range thermal sights with minimum size, weight, and power","authors":"R. Breiter, T. Ihle, J. Wendler, I. Rühlich, J. Ziegler","doi":"10.1117/12.2015516","DOIUrl":"https://doi.org/10.1117/12.2015516","url":null,"abstract":"Situational awareness and precise targeting at day, night and severe weather conditions are key elements for mission success in asymmetric warfare. To support these capabilities for the dismounted soldier, AIM has developed a family of stand-alone thermal weapon sights based on high performance cooled IR-modules which are used e.g. in the infantryman of the future program of the German army (IdZ). The design driver for these sights is a long ID range <1500m for the NATO standard target to cover the operational range of a platoon with the engagement range of .50 cal rifles, 40mm AGLs or for reconnaissance tasks. The most recent sight WBZG has just entered into serial production for the IdZ enhanced system of the German army with additional capabilities like a wireless data link to the soldier backbone computer. Minimum size, weight and power (SWaP) are most critical requirements for the dismounted soldiers’ equipment and sometimes push a decision towards uncooled equipment with marginal performance referring to the outstanding challenges in current asymmetric warfare, e.g. the capability to distinguish between combatants and non-combatants in adequate ranges. To provide the uncompromised e/o performance with SWaP parameters close to uncooled, AIM has developed a new thermal weapon sight based on high operating temperature (HOT) MCT MWIR FPAs together with a new low power single piston stirling cooler. In basic operation the sight is used as a clip-on in front of the rifle scope. An additional eyepiece for stand-alone targeting with e.g. AGLs or a biocular version for relaxed surveillance will be available. The paper will present details of the technologies applied for such long range cooled sights with size, weight and power close to uncooled.","PeriodicalId":338283,"journal":{"name":"Defense, Security, and Sensing","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124195471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7