Defense, Security, and Sensing最新文献_第10页

Low-dark current structures for long-wavelength Type-II strained layer superlattice photodiodes 长波长ii型应变层超晶格光电二极管的低暗电流结构

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2015489

Z. Tian, E. Decuir, P. Wijewarnasuriya, J. Pattison, N. Gautam, S. Krishna, N. Dhar, R. Welser, A. Sood

引用次数: 5

Vertically integrated pixel microbolometers for IR imaging using high-resistivity VOx 用于高电阻率VOx红外成像的垂直集成像素微辐射热计

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2016292

Hitesh A. Basantani, Hang-Beum Shin, T. Jackson, M. Horn

{"title":"Vertically integrated pixel microbolometers for IR imaging using high-resistivity VOx","authors":"Hitesh A. Basantani, Hang-Beum Shin, T. Jackson, M. Horn","doi":"10.1117/12.2016292","DOIUrl":"https://doi.org/10.1117/12.2016292","url":null,"abstract":"Uncooled IR bolometers form an integral part of thermal imaging cameras. Vanadium oxide material currently used for IR imaging has a resistivity between 0.1 and 1 ohm-cm and a temperature coefficient of resistance (TCR) between -1.4%K-1 to -2.4%K-1. Higher TCR materials are desired, however, such materials inevitably have higher resistivity and therefore higher electrical resistance in a lateral resistor configuration. A high resistance leads to an increase in the Johnson-Nyquist noise of the bias-induced current, thereby limiting the performance of bolometers using high resistivity material. In this work, we demonstrate high resistivity, high TCR VOx and propose the use of a vertically integrated resistor configuration an alternate pixel structure design with lower Johnson noise when compared with the conventional lateral pixel design. Biased Target Ion Beam Deposition was used to deposit high resistivity vanadium oxide thin-films (~85 nm thick). Electrical characterization of lateral resistor structures showed resistivities ranging from 2 ⨯ 103 ohm-cm to 2.1 ⨯ 104 ohm-cm, TCR varying from -2.6%K-1 to -5%K-1, Johnson noise (pixel resistance of 1.3GΩ) of 4.7 to 6μV/√Hz and 1/f noise (normalized Hooge’s parameter (α/n)) of 5 ⨯ 10-21 to 5 ⨯ 10-18 cm-3. In contrast, the through-film resistor structures showed significantly higher resistivities at 3 ⨯ 104 Ohm-cm to 1.55 ⨯ 105 Ohm-cm, TCR similar to lateral resistive structure between -2.6%K-1 to -5.1%K-1, immeasurably low Johnson noise (pixel resistance of 48KΩ) and normalized Hooge’s parameter ranging from to 5⨯10-21 to 1⨯10-18 cm-3. These results indicate the possible use of through-film resistors as an alternative to the conventional lateral-resistor design currently used in uncooled imaging microbolometers.","PeriodicalId":338283,"journal":{"name":"Defense, Security, and Sensing","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131277652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Exploring optimum growth window for high quality InAs/GaInSb superlattice materials 探索高质量InAs/GaInSb超晶格材料的最佳生长窗口

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2015314

H. Haugan, G. Brown, M. Kim, K. Mahalingam, S. Elhamri, W. Mitchel, L. Grazulis

{"title":"Exploring optimum growth window for high quality InAs/GaInSb superlattice materials","authors":"H. Haugan, G. Brown, M. Kim, K. Mahalingam, S. Elhamri, W. Mitchel, L. Grazulis","doi":"10.1117/12.2015314","DOIUrl":"https://doi.org/10.1117/12.2015314","url":null,"abstract":"We report ternary growth studies to develop a largely strained InAs/InGaSb superlattice (SL) material for very long wavelength infrared (VLWIR) detection. We select a SL structure of 47.0 Å InAs/21.5 Å In0.25Ga0.75Sb that theoretically designed for the greatest possible detectivity, and tune growth conditions for the best possible material quality. Since material quality of grown SLs is largely influenced by extrinsic defects such as nonradiative recombination centers and residual background dopings in the grown layers, we investigate the effect of growth temperature (Tg) on the spectral responses and charge carrier transports using photoconductivity and temperature-dependent Hall effect measurements. Results indicate that molecular beam epitaxy (MBE) growth process we developed produces a consistent gap near 50 meV within a range of few meV, but SL spectral sensing determined by photoresponse (PR) intensity is very sensitive to the minor changes in Tg. For the SLs grown from 390 to 470 °C, a PR signal gradually increases as Tg increases from 400 to 440 °C by reaching a maximum at 440 °C. Outside this growth window, the SL quality deteriorates very rapidly. All SLs grown for this study were n-type, but the mobility varied in a variety of range between 11,300 and 21 cm2/Vs. The mobility of the SL grown at 440 °C was approximately 10,000 V/cm2 with a sheet carrier concentration of 5 × 1011 cm-2, but the mobility precipitously dropped to 21 cm2/Vs at higher temperatures. Using the knowledge we learned from this growth set, other growth parameters for the MBE ternary SL growth should be further adjusted in order to achieve high performance of InAs/InGaSb materials suitable for VLWIR detection.","PeriodicalId":338283,"journal":{"name":"Defense, Security, and Sensing","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114942781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Crosstalk analysis in large-area low-capacitance InGaAs quad photodiodes 大面积低电容InGaAs四极光电二极管串扰分析

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2015609

S. Datta, A. Joshi, J. Rue

引用次数: 3

High quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layers 具有薄本征层的高量子效率ii型超晶格n结构光电探测器

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2016133

Y. Ergun, M. Hoştut, T. Tansel, A. Muti, A. Kılıç, R. Turan, A. Aydinli

引用次数: 0

A low-noise silicon-based 20μm*20μm uncooled thermoelectric infrared detector 低噪声硅基20μm*20μm非制冷热电红外探测器

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2016283

M. Modarres-Zadeh, R. Abdolvand

{"title":"A low-noise silicon-based 20μm*20μm uncooled thermoelectric infrared detector","authors":"M. Modarres-Zadeh, R. Abdolvand","doi":"10.1117/12.2016283","DOIUrl":"https://doi.org/10.1117/12.2016283","url":null,"abstract":"Presented is an uncooled surface-micromachined thermoelectric (TE) infrared detector that features P-doped and N-doped polysilicon wires as the thermocouple pair and an umbrella like optical cavity as the absorber to achieve a high fill factor. A responsivity as high as1800V/W @5Hz and a response time of smaller than ~10ms are measured in vacuum when viewing a 500K blackbody with no concentrating optics at room temperature. The reported responsivity is more than 10 times higher than the value reported earlier [1] from similar structures due to the improvement in the thermoelectric coefficient and the thermal isolation of the cell. Finite Element Analysis is used to predict the detector’s performance and the results are in a good agreement with the measurements. The dominant source of noise is also investigated in these thermoelectric IR detectors and it is believed to be Johnson noise when they are operated under an open circuit condition. The fabricated detectors have resistances in the range of 20 to 70KOhm resulting in a Johnson noise of about 20 to 36 nV/Hz^0.5. The specific detectivity (D*) is calculated to be higher than 10^8cmHz^0.5/W. To the best of our knowledge, this is the highest reported D* for such small thermoelectric IR sensors. The measured NETD is 120mK with an f/1.5 lens.","PeriodicalId":338283,"journal":{"name":"Defense, Security, and Sensing","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132511610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Overview of benefits, challenges, and requirements of wheeled-vehicle mounted infrared sensors 轮式车载红外传感器的优势、挑战和要求概述

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2018866

J. L. Miller, P. Clayton, Stefan Olsson

引用次数: 1

BAE Systems' 17μm LWIR camera core for civil, commercial, and military applications BAE系统公司用于民用、商业和军事应用的17μm LWIR相机核心

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2018090

Jeffrey Lee, Christian Rodriguez, R. Blackwell

引用次数: 6

Large-format 17μm high-end VOx μ-bolometer infrared detector 大画幅17μm高端VOx μ-测热红外探测器

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2015653

U. Mizrahi, N. Argaman, S. Elkind, A. Giladi, Y. Hirsh, M. Labilov, I. Pivnik, N. Shiloah, M. Singer, A. Tuito, M. Ben-Ezra, I. Shtrichman

引用次数: 17

A low-noise, extended dynamic range 1.3 megapixel InGaAs array 低噪声，扩展动态范围130万像素InGaAs阵列

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2019030

W. Vereecken, Urbain Van Bogget, T. Colin, R. Vinella, J. Das, P. Merken, J. Vermeiren

{"title":"A low-noise, extended dynamic range 1.3 megapixel InGaAs array","authors":"W. Vereecken, Urbain Van Bogget, T. Colin, R. Vinella, J. Das, P. Merken, J. Vermeiren","doi":"10.1117/12.2019030","DOIUrl":"https://doi.org/10.1117/12.2019030","url":null,"abstract":"Xenics has designed and manufactured a 1280*1024 pixel, 17 µm pitch InGaAs array for SWIR imaging in the [0.9 - 1.7 µm] range. It will report on the first characterization results of the device. As usual for this type of room temperature operated SWIR image sensors, the detector interface is based on a CTIA stage, yielding excellent linearity, a low detector bias and hence a low and stable dark current combined with low image lag. The charge to voltage conversion factor is 40 µV/e-. The pixel interface scheme contains a CDS circuit in order to reduce the kTC noise and common mode effects. The noise is expected to be below 30 e-rms in linear mode, resulting in a dynamic range < 60 dB. Additionally the linear dynamic range is complemented with a high dynamic range logarithmic response with a saturation level < 5 nA/pixel. The information in the pixel matrix can be read via 2, 4 or 8 outputs, yielding a maximum full frame rate between 50 and 200 Hz. Each output is operating at 40 MHz pixel rate. The outputs are differential with a common mode voltage of 0.9 V and an adjustable output swing of 2 Vptp. Nevertheless the power dissipation shall be below 330 mW.","PeriodicalId":338283,"journal":{"name":"Defense, Security, and Sensing","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123968474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4