Defense, Security, and Sensing最新文献_第9页

Infrared signature reduction of military and law enforcement uniforms 减少军队和执法制服的红外信号

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2018077

Than Emery, René Schwarz

引用次数: 2

Low-cost uncooled VOx infrared camera development 低成本非制冷VOx红外摄像机的研制

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2019653

Chuan C. Li, C. J. Han, G. Skidmore, G. Cook, K. Kubala, Rob Bates, D. Temple, J. Lannon, A. Hilton, K. Glukh, Busbee Hardy

{"title":"Low-cost uncooled VOx infrared camera development","authors":"Chuan C. Li, C. J. Han, G. Skidmore, G. Cook, K. Kubala, Rob Bates, D. Temple, J. Lannon, A. Hilton, K. Glukh, Busbee Hardy","doi":"10.1117/12.2019653","DOIUrl":"https://doi.org/10.1117/12.2019653","url":null,"abstract":"The DRS Tamarisk® 320 camera, introduced in 2011, is a low cost commercial camera based on the 17 µm pixel pitch 320×240 VOx microbolometer technology. A higher resolution 17 µm pixel pitch 640×480 Tamarisk®640 has also been developed and is now in production serving the commercial markets. Recently, under the DARPA sponsored Low Cost Thermal Imager-Manufacturing (LCTI-M) program and internal project, DRS is leading a team of industrial experts from FiveFocal, RTI International and MEMSCAP to develop a small form factor uncooled infrared camera for the military and commercial markets. The objective of the DARPA LCTI-M program is to develop a low SWaP camera (<3.5 cm3 in volume and <500 mW in power consumption) that costs less than US $500 based on a 10,000 units per month production rate. To meet this challenge, DRS is developing several innovative technologies including a small pixel pitch 640×512 VOx uncooled detector, an advanced digital ROIC and low power miniature camera electronics. In addition, DRS and its partners are developing innovative manufacturing processes to reduce production cycle time and costs including wafer scale optic and vacuum packaging manufacturing and a 3-dimensional integrated camera assembly. This paper provides an overview of the DRS Tamarisk® project and LCTI-M related uncooled technology development activities. Highlights of recent progress and challenges will also be discussed. It should be noted that BAE Systems and Raytheon Vision Systems are also participants of the DARPA LCTI-M program.","PeriodicalId":338283,"journal":{"name":"Defense, Security, and Sensing","volume":"408 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115933492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 12

Infrared emitters and photodetectors with InAsSb bulk active regions 红外发射体和具有红外assb活性区的光电探测器

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2016082

Ding Wang, YouXi Lin, D. Donetsky, G. Kipshidze, L. Shterengas, G. Belenky, S. Svensson, W. Sarney, H. Hier

引用次数: 4

IR CMOS: infrared enhanced silicon imaging IR CMOS:红外增强硅成像

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2015959

M. Pralle, J. Carey, H. Haddad, C. Vineis, J. Sickler, X. Li, J. Jiang, F. Sahebi, C. Palsule, J. McKee

引用次数: 5

MBE growth of Sb-based nBn photodetectors on large diameter GaAs substrates sb基nBn光电探测器在大直径GaAs衬底上的MBE生长

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2019039

D. Lubyshev, J. Fastenau, Y. Qiu, A. Liu, E. Koerperick, J. Olesberg, Dennis T. Norton, N. Faleev, C. Honsberg

{"title":"MBE growth of Sb-based nBn photodetectors on large diameter GaAs substrates","authors":"D. Lubyshev, J. Fastenau, Y. Qiu, A. Liu, E. Koerperick, J. Olesberg, Dennis T. Norton, N. Faleev, C. Honsberg","doi":"10.1117/12.2019039","DOIUrl":"https://doi.org/10.1117/12.2019039","url":null,"abstract":"The GaSb-based family of materials and heterostructures provides rich bandgap engineering possibilities for a variety of infrared (IR) applications. Mid-wave and long-wave IR photodetectors are progressing toward commercial manufacturing applications, but to succeed they must move from research laboratory settings to general semiconductor production and they require larger diameter substrates than the current standard 2-inch and 3-inch GaSb. Substrate vendors are beginning production of 4-inch GaSb, but another alternative is growth on 6-inch GaAs substrates with appropriate metamorphic buffer layers. We have grown generic MWIR nBn photodetectors on large diameter, 6-inch GaAs substrates by molecular beam epitaxy. Multiple metamorphic buffer architectures, including bulk GaSb nucleation, AlAsSb superlattices, and graded GaAsSb and InAlSb ternary alloys, were employed to bridge the 7.8% mismatch gap from the GaAs substrates to the GaSb-based epilayers at 6.1 Å lattice-constant and beyond. Reaching ~6.2 Å extends the nBn cutoff wavelength from 4.2 to <5 µm, thus broadening the application space. The metamorphic nBn epiwafers demonstrated unique surface morphologies and crystal properties, as revealed by AFM, high-resolution XRD, and cross-section TEM. GaSb nucleation resulted in island-like surface morphology while graded ternary buffers resulted in cross-hatched surface morphology, with low root-mean-square roughness values of ~10 Å obtained. XRD determined dislocation densities as low as 2 × 107 cm-2. Device mesas were fabricated and dark currents of 1 × 10-6 A/cm2 at 150K were measured. This work demonstrates a promising path to satisfy the increasing demand for even larger area focal plane array detectors in a commercial production environment.","PeriodicalId":338283,"journal":{"name":"Defense, Security, and Sensing","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125818285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Hyperspectral reconnaissance in urban environment 城市环境中的高光谱侦察

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2019348

I. Renhorn, V. Achard, Maria Axelsson, K. Benoist, D. Borghys, X. Briottet, R. Dekker, A. Dimmeler, O. Friman, I. Kåsen, S. Matteoli, M. Lo Moro, Thomas Olsvik Opsahl, M. van Persie, Salvatore Resta, H. Schilling, P. Schwering, M. Shimoni, T. Haavardsholm, F. Viallefont

引用次数: 9

Multiwafer production of epitaxy-ready 4" GaSb: substrate performance assessments pre- and post-epitaxial growth 外延制备4" GaSb的多晶片生产:外延前和外延后衬底性能评估

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2016681

M. J. Furlong, R. Martinez, S. Amirhaghi, A. Mowbray, Brian J. Smith, D. Lubyshev, J. Fastenau, A. Liu

引用次数: 5

SWIR InGaAs focal plane arrays in France 法国的SWIR InGaAs焦平面阵列

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2015355

A. Rouvié, O. Huet, S. Hamard, J. Truffer, M. Pozzi, J. Decobert, E. Costard, M. Zecri, P. Maillart, Y. Reibel, A. Pécheur

{"title":"SWIR InGaAs focal plane arrays in France","authors":"A. Rouvié, O. Huet, S. Hamard, J. Truffer, M. Pozzi, J. Decobert, E. Costard, M. Zecri, P. Maillart, Y. Reibel, A. Pécheur","doi":"10.1117/12.2015355","DOIUrl":"https://doi.org/10.1117/12.2015355","url":null,"abstract":"SWIR detection band benefits from natural (sun, night glow, thermal radiation) or artificial (eye safe lasers) photons sources combined to low atmospheric absorption and specific contrast compared to visible wavelengths. It gives the opportunity to address a large spectrum of applications such as defense and security (night vision, active imaging), space (earth observation), transport (automotive safety) or industry (non destructive process control). InGaAs material appears as a good candidate to satisfy SWIR detection needs. The lattice matching with InP constitutes a double advantage to this material: attractive production capacity and uncooled operation thanks to low dark current level induced by high quality material. The study of InGaAs FPA has begun few years ago with III-VLab, gathering expertise in InGaAs material growth and imaging technology respectively from Alcatel-Lucent and Thales, its two mother companies. This work has led to put quickly on the market a 320x256 InGaAs module. The recent transfer of imagery activities from III-VLab to Sofradir allows developing new high performances products, satisfying customers’ new requirements. Especially, a 640x512 InGaAs module with a pitch of 15µm is actually under development to fill the needs of low light level imaging.","PeriodicalId":338283,"journal":{"name":"Defense, Security, and Sensing","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130057342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 31

High-performance MWIR type-II superlattice detectors 高性能MWIR ii型超晶格探测器

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2016602

H. Martijn, C. Asplund, Rickard Marcks von Würtemberg, H. Malm

引用次数: 15

Protecting SWIR cameras from laser threats 保护SWIR摄像机免受激光威胁

Defense, Security, and Sensing Pub Date : 2013-06-11 DOI: 10.1117/12.2015041

A. Donval, T. Fisher, O. Lipman, M. Oron

引用次数: 4