低噪声,扩展动态范围130万像素InGaAs阵列

W. Vereecken, Urbain Van Bogget, T. Colin, R. Vinella, J. Das, P. Merken, J. Vermeiren
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引用次数: 4

摘要

Xenics设计并制造了1280*1024像素,17µm间距的InGaAs阵列,用于[0.9 - 1.7µm]范围内的SWIR成像。它将报告该器件的第一个表征结果。通常对于这种类型的室温操作SWIR图像传感器,探测器接口基于CTIA级,产生出色的线性度,低探测器偏置,因此具有低而稳定的暗电流和低图像滞后。充电电压转换系数为40µV/e-。像素接口方案包含一个CDS电路,以降低kTC噪声和共模效应。在线性模式下,噪声预计低于30 e-rms,从而导致动态范围< 60 dB。此外,线性动态范围补充了一个高动态范围的对数响应与饱和度水平< 5 nA/像素。像素矩阵中的信息可以通过2、4或8个输出读取,产生50到200 Hz之间的最大全帧速率。每个输出以40 MHz像素率工作。输出差分,共模电压为0.9 V,可调输出摆幅为2 Vptp。然而,功耗应低于330mw。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A low-noise, extended dynamic range 1.3 megapixel InGaAs array
Xenics has designed and manufactured a 1280*1024 pixel, 17 µm pitch InGaAs array for SWIR imaging in the [0.9 - 1.7 µm] range. It will report on the first characterization results of the device. As usual for this type of room temperature operated SWIR image sensors, the detector interface is based on a CTIA stage, yielding excellent linearity, a low detector bias and hence a low and stable dark current combined with low image lag. The charge to voltage conversion factor is 40 µV/e-. The pixel interface scheme contains a CDS circuit in order to reduce the kTC noise and common mode effects. The noise is expected to be below 30 e-rms in linear mode, resulting in a dynamic range < 60 dB. Additionally the linear dynamic range is complemented with a high dynamic range logarithmic response with a saturation level < 5 nA/pixel. The information in the pixel matrix can be read via 2, 4 or 8 outputs, yielding a maximum full frame rate between 50 and 200 Hz. Each output is operating at 40 MHz pixel rate. The outputs are differential with a common mode voltage of 0.9 V and an adjustable output swing of 2 Vptp. Nevertheless the power dissipation shall be below 330 mW.
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