2020 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus)最新文献_第9页

The Processing of OFDM System Signals in Dispersion Channel 色散信道中OFDM系统信号的处理

2020 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus) Pub Date : 2020-01-01 DOI: 10.1109/EIConRus49466.2020.9038938

K. S. Slipenchuk, Alexandr Filimonov

引用次数: 0

Shape and Color Coding: Recall Efficiency 形状和颜色编码:回忆效率

2020 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus) Pub Date : 2020-01-01 DOI: 10.1109/EIConRus49466.2020.9039450

Yaroslav A. Svistelnikov, A. Volosiuk, O. Voronina

引用次数: 2

Query Expansion for Myanmar Information Retrieval Used by WordNet WordNet缅甸信息检索的查询扩展

2020 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus) Pub Date : 2020-01-01 DOI: 10.1109/EIConRus49466.2020.9039137

N. Lin, V. A. Kudinov, Hein Min Zaw, SoeYan Naing

引用次数: 3

Technological Stresses in the System of High-Voltage Mica Insulation 高压云母绝缘系统中的工艺应力

2020 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus) Pub Date : 2020-01-01 DOI: 10.1109/EIConRus49466.2020.9039025

Petr V. Karakchiev, T. Shikova, I. Ivanov

引用次数: 2

A Method for Analyzing the Activity of Cold Wallets and Identifying Abandoned Cryptocurrency Wallets 一种分析冷钱包活动和识别废弃加密货币钱包的方法

2020 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus) Pub Date : 2020-01-01 DOI: 10.1109/EIConRus49466.2020.9039145

Andrey S. Khadzhi, S. V. Zareshin, O. Tarakanov

引用次数: 3

Evaluation of Parallel Operation of OJSC "Pamir Energy" Power System with Electrical Networks of OSHC "Barki Tojik" of the Republic of Tajikistan OJSC“帕米尔能源”电力系统与塔吉克斯坦共和国“Barki Tojik”OSHC电网并联运行的评估

2020 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus) Pub Date : 2020-01-01 DOI: 10.1109/EIConRus49466.2020.9039309

S. R. Chorshanbiev, Naim Ch. Saidmirov, Amroz R. Khudomunov

引用次数: 0

Development of a Technological Route for the Silicon Microneedles Matrix Formation 硅微针基体形成工艺路线的发展

2020 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus) Pub Date : 2020-01-01 DOI: 10.1109/EIConRus49466.2020.9038950

Yury A. Chaplygin, M. G. Putrya, V. V. Paramonov, T. Osipova

{"title":"Development of a Technological Route for the Silicon Microneedles Matrix Formation","authors":"Yury A. Chaplygin, M. G. Putrya, V. V. Paramonov, T. Osipova","doi":"10.1109/EIConRus49466.2020.9038950","DOIUrl":"https://doi.org/10.1109/EIConRus49466.2020.9038950","url":null,"abstract":"This article shows a new technological approach for the formation of a silicon microneedles array with \"smooth\" side walls, a curvature radius less than 50 nm and a 3 μm of height. Usually, when sharpening the tip of the needle after forming the main profile using plasma etching, thermal silicon oxidation is being used. The results obtained in this case have a significant scatter of parameters. At this stage of the creating a microneedles array process, it is proposed to use the technology of plasma chemical oxidation (P)CO. A problem solution of the profile microroughness due to optimization of the isotropic silicon etching stage is also presented, and a technology has been developed to create a microneedles array in a single vacuum cycle. This technology made it possible to increase the reproducibility of the profile geometric characteristics more than 50% and halve the microneedles curvature radius. On semiconductor arrays created using the developed technology, various semiconductor devices can be formed, including silicon field emitters.","PeriodicalId":333365,"journal":{"name":"2020 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129063504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Carbon Nanotubes as Means to Optimizing the Operation of Liquid Crystal Cells 碳纳米管作为优化液晶电池运行的手段

2020 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus) Pub Date : 2020-01-01 DOI: 10.1109/EIConRus49466.2020.9039500

A. Toikka, N. Kamanina, Yu. A. Zubtcova

{"title":"Carbon Nanotubes as Means to Optimizing the Operation of Liquid Crystal Cells","authors":"A. Toikka, N. Kamanina, Yu. A. Zubtcova","doi":"10.1109/EIConRus49466.2020.9039500","DOIUrl":"https://doi.org/10.1109/EIConRus49466.2020.9039500","url":null,"abstract":"Liquid crystals (LC) are a special unique mesophase that combines both the properties of a liquid and a solid. LC molecules can be ordered by the action of external field, for example, by the electric one, which allows creating the various electro-optical devices such as spatial light modulators, display elements, optical limiters, biomedicine cells, etc.Generally LC cell includes a direct LC layer, conductive contacts (indium tin oxides ITO or ZnO), orientation layers, and glass or quartz substrates. Due to the small thickness the ITO contacts are often destroyed under the high laser radiation. This problem could be solved by laser-oriented deposition technique, which permits to deposit the carbon nanotubes in the vertical position directly on the substrate. This procedure increases dramatically the laser strength and mechanical hardness of the ITO as well as its transparency.In the current paper, the result of the comparative study of the basic parameters of pure ITO and ITO with vertically deposited CNTs is noted. Moreover, extended area of the application the LC cell with the modified ITO is predicted.","PeriodicalId":333365,"journal":{"name":"2020 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus)","volume":"03 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131076153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modeling the Operating Range of the Fire Safety System Response Parameters on Board 船上消防安全系统响应参数操作范围的建模

2020 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus) Pub Date : 2020-01-01 DOI: 10.1109/EIConRus49466.2020.9038955

A. Nyrkov, Mariia V. Kardakova, S. V. Kolesnichenko, Yulia V. Tsymay, K. Goloskokov

引用次数: 2

Design and Implementation of the Sensing Element of the Capacitive Microaccelerometer with a Sandwich Construction Using the Variable Dielectric Displacement Method 变介电位移法夹层结构电容式微加速度计传感元件的设计与实现

2020 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus) Pub Date : 2020-01-01 DOI: 10.1109/EIConRus49466.2020.9039456

Ye Ko Ko Aung, B. M. Simonov, S. Timoshenkov, Z. Oo, A. Thura

{"title":"Design and Implementation of the Sensing Element of the Capacitive Microaccelerometer with a Sandwich Construction Using the Variable Dielectric Displacement Method","authors":"Ye Ko Ko Aung, B. M. Simonov, S. Timoshenkov, Z. Oo, A. Thura","doi":"10.1109/EIConRus49466.2020.9039456","DOIUrl":"https://doi.org/10.1109/EIConRus49466.2020.9039456","url":null,"abstract":"A sensitive element of MEMS capacitive accelerometer with a sandwich construction (X axis) using the variable dielectric displacement method is studied in this article. As a result, there is a change in capacitance in the output measuring circuit. The considered model provides high sensitivity to the effects of acceleration, resistance to temperature changes and low residual mechanical stress in the sensing element. Modeling and calculations are performed using the ANSYS and SOLIDWORKS programs. The magnitude of the displacement of the movable mass along the sensitivity axis (X) is 5 times greater than the displacement of the movable mass along the nonworking axes (Z and Y), and the capacitance changes between the electrodes along the X axis are almost 2500 times greater than the capacitance changes between the electrodes along the nonworking axes (Z and Y). The mechanical stress in the sensitive element is significantly less than the silicon tensile strength of 440 MPa under the acceleration (0-30g). Temperature variations in the range from -40 ° C to + 85 ° C resulted in very insignificant changes in capacitance along the working axis equaled 0.0025 - 0.003pF, which indicates the temperature stability of the sensitive element. The analysis showed that the developed and studied model of the sensitive element’s design provides high MMA sensitivity and the stability of its parameters.","PeriodicalId":333365,"journal":{"name":"2020 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132520948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0