{"title":"Devices for 100 Gb/s communications","authors":"I. N. Duling","doi":"10.1109/LEOS.1996.571964","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571964","url":null,"abstract":"Summary form only given. Ultrahigh bandwidth communication can be accomplished by either wavelength or time division multiplexing, or both. A logical route is to advance TDM as far as possible and then implement WDM after a reasonable limit has been reached. Recent experiments have demonstrated that TDM channels can be produced that can carry up to 400 Gb/s and sent up to 80 km. In order to make this technology practical, optical devices that can generate, encode, multiplex and demultiplex these high bit rate signals must be developed. In our laboratory we have been using a test system operating at 100 Gb/s (8 channels of 12.5 Gb/s) to develop technologies compatible with these goals. In TDM systems that require return to zero coding, there is the possibility, depending on the energy and dispersion of the pulses to use either linear propagation or soliton propagation of the pulses. The optical source used for our test system is a harmonically mode-locked fiber laser capable of producing 1.5 ps pulses at repetition rates between 8 and 15 GHz. Multiplexing of independently modulated bit streams into a single 100 Gb/s stream can be accomplished with fiber optic couplers if care is taken to correctly phase the channels. In our laboratory, for test purposes we have implemented a 1/spl times/8 multiplexer based on 45' spliced PM fiber. The result is a 100 Gb/s pseudorandom bit stream where each channel has the same bit pattern, facilitating the testing of the system devices. Many types of demultiplexers have been proposed for these systems, and some have been demonstrated. We have demonstrated a polarization multiplexed nonlinear mirror demultiplexer, and have also developed a demultiplexer based on integrated optic modulators which should be able to perform not only demultiplexing, but also add-drop functions at these bit rates.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121783102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Access networks for personal communication systems","authors":"O.K. Tongus","doi":"10.1109/LEOS.1996.571934","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571934","url":null,"abstract":"This work addresses the important issue of how to avoid installing big and expensive base stations in the small microcells of future personal communication networks. To this end, the capabilities of fiber and coax technologies are quantified and the feasibility of a hybrid fiber/coax access network is studied. A PCN access network is proposed which uses subcarrier multiplexing (SCM) in conjunction with a simple WDM configuration. We provide a comprehensive capacity analysis for the subcarrier multiplexed optical link (SCMOL) which is the communication link between each passive radio base station (PRBS) and the central base station (CBS). Dynamic range requirements of the cellular radio environment are explicitly quantified and explained in terms of the dynamic range of SCMOL considering all the major noise sources.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115926507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Savolainen, M. Pessa, S. Heinemann, F. Daiminger
{"title":"High power visible laser diode arrays","authors":"P. Savolainen, M. Pessa, S. Heinemann, F. Daiminger","doi":"10.1109/LEOS.1996.565238","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565238","url":null,"abstract":"Interest in solid state materials, including chromium doped LiCaAlF/sub 6/ (LiCaF) and chromium doped LiSrAlF/sub 6/ (LiSaF), has created a need for pump diodes in the wavelength range of 650-690 nm. However, these visible laser diodes exhibit rather low output power due to high threshold current densities (J/sub th/), modest external quantum efficiency (/spl eta//sub d/) and low characteristic temperature (T/sub 0/). In this paper we report characteristics of GaInP/AlGaInP single quantum well visible laser arrays operating up to a CW peak power of 24 W at 675 nm, which are suitable for pumping solid state materials.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":"50 13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134151411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Interdigitated metal-semiconductor-metal (MSM) structures-rigorous treatment of light propagation","authors":"T. Korner, P. Regli, U. Krumbein, W. Fichtner","doi":"10.1109/LEOS.1996.565187","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565187","url":null,"abstract":"Light propagation in a periodic interdigitated metal-semiconductor-metal (MSM) structure is modelled by means of rigorous electromagnetic theory. The effects of varying the intensity distribution on the time dependence of the response behaviour are examined using electronic device simulation.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129404370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Characteristics of low threshold 1.3 /spl mu/m lasers grown by solid source molecular beam epitaxy","authors":"C. Wamsley, M. Koch, G. Wicks","doi":"10.1109/LEOS.1996.571618","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571618","url":null,"abstract":"We report on the growth and characterization of high quality 1.3 /spl mu/m lasers grown by SSMBE with various laser structures and core materials. Our best 1.3 /spl mu/m lasers utilize compressively strained InAsP/GaInAsP quantum wells. Compressive strain serves to decrease the heavy hole effective mass which reduces the density of states of the valence band resulting in lower threshold currents as compared to lattice matched devices. The room temperature photoluminescence and threshold current density versus inverse cavity length are shown.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132783385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Ohmori, Y. Hironaka, M. Yoshida, A. Fujii, K. Yoshino
{"title":"Efficient emission from poly(3-alkylthiophene) light emitting diode with different alkyl-side-chain lengths by doping of dye molecules","authors":"Y. Ohmori, Y. Hironaka, M. Yoshida, A. Fujii, K. Yoshino","doi":"10.1109/LEOS.1996.565138","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565138","url":null,"abstract":"Electroluminescent (EL) diodes utilizing poly(3-alkylthiophene) (P3AT) containing fluorescent dyes have been fabricated. It has more than 500 times higher EL efficiency in P3AT diodes doped with (1,2,3,4,5-pentaphenyl-1,3-cyclopentadiene) (PPCP) than in undoped diode. The mechanism of emission enhancement in P3AT diodes with different alkyl side chains has been discussed in terms of carrier confinement and energy band diagram.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133033882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Mid-infrared femtosecond pulses obtained by optical rectification of 10-fs optical pulses","authors":"A. Bonvalet, J. Martin, A. Migus, M. Joffre","doi":"10.1109/LEOS.1996.571970","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571970","url":null,"abstract":"We generate quasi single-cycle femtosecond pulses in the mid-infrared spectral domain by performing the optical rectification of 10-fs visible pulses. This represents a tenfold increase in the frequencies achieved through optical rectification, previously generated in the far-infrared domain only. The 10-fs pulses produced by a 100-MHz Ti:sapphire oscillator are first sent through a modified Michelson interferometer, allowing to focus a sequence of two pulses on a nonlinear material such as GaAs or GaSe. Due to the second-order nonlinear response of these materials, the incident pulses are optically rectified. This results in a transient polarization of duration 10 fs, which in turn radiates an electromagnetic wave with frequency components ranging from 0 to 50 THz.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133499811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Low reflectance internal mirrors","authors":"J. Park, H. Taylor","doi":"10.1109/LEOS.1996.571610","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571610","url":null,"abstract":"Summary form only given. An internal mirror in a continuous length of optical fiber has been a basic component for a variety of devices in optical fiber communication systems. Hence, some kinds of internal mirrors have been fabricated, but none of them was low reflectance internal mirror with low insertion loss. Low reflectance mirrors with low insertion loss were produced using mechanical splices and pieces of fiber coated with a TiO/sub 2/ film. These mirrors can be used as partial reflectors in the optical fiber transversal filters. The fabrication procedures of internal mirrors is presented.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115439295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
G. Erber, F. Bugge, J. Sebastian, K. Vogel, H. Wenzel, M. Weyers
{"title":"A study of structures with Al-free QWs in AlGaAs waveguides for laser diodes emitting at 800 nm","authors":"G. Erber, F. Bugge, J. Sebastian, K. Vogel, H. Wenzel, M. Weyers","doi":"10.1109/LEOS.1996.565114","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565114","url":null,"abstract":"High power laser diodes emitting at 800 nm using strained GaAsP- and unstrained InGaAsP-SQWs in the active region are investigated. A very small far field angle of 23/spl deg/ and a high efficiency of 1.1 W/A for 1000 /spl mu/m long laser diodes are achieved. A 1 cm bar with 37.5 % active area shows a CW-output power of 60 W.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115565676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Planar devices for wavelength multiplexing","authors":"R. O. Maschmeyer, C. Lerminiaux","doi":"10.1109/LEOS.1996.571534","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571534","url":null,"abstract":"This paper presents WDM demultiplexing devices using planar optical technology. Complex devices integrating multiple functions like optical cross connects or transceivers are predicted for the future.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":"217 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114764000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}