发布求助
文献互助 智能选刊 最新文献

Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society最新文献

筛选
英文 中文
Improved modulation bandwidth of strained quantum well lasers by coupled with n-type /spl delta/-doped layer 耦合n型/spl δ /掺杂层提高应变量子阱激光器的调制带宽
Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society Pub Date : 1996-11-18 DOI: 10.1109/LEOS.1996.571950
O. Buchinsky, M. Blumin, R. Sarfaty, D. Fekete, M. Orenstein
{"title":"Improved modulation bandwidth of strained quantum well lasers by coupled with n-type /spl delta/-doped layer","authors":"O. Buchinsky, M. Blumin, R. Sarfaty, D. Fekete, M. Orenstein","doi":"10.1109/LEOS.1996.571950","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571950","url":null,"abstract":"Improved dynamic properties of strained single quantum well (QW) laser are obtained by adding an n-type /spl delta/-doping to the active layer. The increased modulation bandwidth is attributed to the enhancement of capture in the QW. The design was performed by calculating the overall potential profile, by combining the analytical solution of /spl delta/-doping with the squared potential of a finite strained In/sub x/Ga/sub 1-x/As/GaAs QW.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126848874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improvement of beam quality of a Nd:glass laser by coupling with a stimulated Brillouin scattering cell 与受激布里渊散射池耦合改善钕玻璃激光器光束质量
Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society Pub Date : 1996-11-18 DOI: 10.1109/LEOS.1996.571634
J. Kong, S. Kim, Y. Shin
{"title":"Improvement of beam quality of a Nd:glass laser by coupling with a stimulated Brillouin scattering cell","authors":"J. Kong, S. Kim, Y. Shin","doi":"10.1109/LEOS.1996.571634","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571634","url":null,"abstract":"Recently, lasers and amplifiers have been developed to obtain a good spatial profile of a laser beam since good beam quality has been required for the best experimental results. In this work a simple method to improve the spatial profile of a laser is proposed, where the SBS cell is placed as an additional output coupler outside the Fabry-Perot resonator. Alignment of such a laser is very simple because the reflected beam from the SBS mirror propagates along the optic axis of the laser.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126869150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Micromachining for optoelectronic systems 光电系统的微加工
Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society Pub Date : 1996-11-18 DOI: 10.1109/LEOS.1996.571615
M. Wu
{"title":"Micromachining for optoelectronic systems","authors":"M. Wu","doi":"10.1109/LEOS.1996.571615","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571615","url":null,"abstract":"We review the current state of the art of micromachining in optoelectronic systems, and discuss in detail the progress of the free-space micro-optical bench (FSMOB) project at UCLA. The FSMOB comprises passive optical elements (diffractive and refractive lenses, gratings, beamsplitters, filters, etc.), micropositioners (translation and rotation stages), and microactuators. Because the micro-optical elements on the FSMOB are precisely positioned by photolithography, they can be \"pre-aligned\" during the photomask layout. The fabrication of the out-of-plane optical elements are compatible with the micromotors and other microactuators. Therefore, the optical elements can be monolithically integrated with micropositioners and microactuators for optical switching or scanning, or to achieve fine optical alignment.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127726898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monolithic p-i-n GaAlAs photorefractive devices 单片p-i-n GaAlAs光折变器件
Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society Pub Date : 1996-11-18 DOI: 10.1109/LEOS.1996.565207
P. Tayebati, C. Hantzis, R. Sacks
{"title":"Monolithic p-i-n GaAlAs photorefractive devices","authors":"P. Tayebati, C. Hantzis, R. Sacks","doi":"10.1109/LEOS.1996.565207","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565207","url":null,"abstract":"Summary form only given. Photorefractive epitaxial devices are band-gap engineered, high speed, real-time holograms that operate by a combination of charge transport and resonant electrooptic nonlinearities in semiconductors. In this work we report successful demonstration of a number of monolithic photorefractive devices consisting of an MQW photorefractive device structure on a GaAlAs-AlAs quarter-wave stack mirror.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132771796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Lasers and electro-optics in the health care of the future 未来医疗保健中的激光和电光
Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society Pub Date : 1996-11-18 DOI: 10.1109/LEOS.1996.565093
J. Parrish
{"title":"Lasers and electro-optics in the health care of the future","authors":"J. Parrish","doi":"10.1109/LEOS.1996.565093","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565093","url":null,"abstract":"Summary form only given. Medical practice is being rapidly redefined by market forces on one side and new technologies on the other. The shift from inpatient to outpatient surgery is a good example of this. Advances in procedural medicine will be built upon the core technologies of high speed computing, robotics, systems engineering, lasers, optics, imaging and biomedical engineering. These technologies cut across traditional disciplines and have the possibilities of making medical care better, safer and less expensive.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133649134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Manufacturing infrastructure for optoelectronics 光电制造基础设施
Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society Pub Date : 1996-11-18 DOI: 10.1109/LEOS.1996.571603
A. Bergh
{"title":"Manufacturing infrastructure for optoelectronics","authors":"A. Bergh","doi":"10.1109/LEOS.1996.571603","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571603","url":null,"abstract":"The Optoelectronics Industry Development Association (OIDA), founded in 1991, is a North American partnership of suppliers and users of optoelectronics components. OIDA's objective is to improve the competitiveness of the North American optoelectronics industry. To that end, OIDA has undertaken an Optoelectronic Technology Roadmap Program, intended to identify the critical paths for the development of enabling optoelectronic technologies. A major conclusion of the road map program is that key to driving optoelectronics technology to higher performance, lower cost and improved competitiveness is volume manufacturing. With a few exceptions, North America lacks a large volume product manufacturing infrastructure for optoelectronic components and subassemblies.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130341634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The differential efficiency of GaInP quantum well lasers GaInP量子阱激光器的微分效率
Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society Pub Date : 1996-11-18 DOI: 10.1109/LEOS.1996.565240
P. Smowton, P. Blood
{"title":"The differential efficiency of GaInP quantum well lasers","authors":"P. Smowton, P. Blood","doi":"10.1109/LEOS.1996.565240","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565240","url":null,"abstract":"Using experimental measurements of spontaneous emission spectra, we have separated the effects that current spreading and Fermi-level pinning have on the temperature dependence of the external differential efficiency of GaInP laser diodes. We conclude that a major factor contributing to the decrease of external differential efficiency with increasing temperature is a decrease in injection efficiency due to incomplete Fermi level pinning at threshold in the barrier regions alongside the well, and an increase in barrier recombination as the temperature increases.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130972132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InGaAs GRINSCH-SQW lasers with novel carbon delta doped contact layer 新型碳δ掺杂接触层InGaAs GRINSCH-SQW激光器
Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society Pub Date : 1996-11-18 DOI: 10.1109/LEOS.1996.571586
S. Yuan, Gang Li, H. Tan, C. Jagadish, F. Karouta
{"title":"InGaAs GRINSCH-SQW lasers with novel carbon delta doped contact layer","authors":"S. Yuan, Gang Li, H. Tan, C. Jagadish, F. Karouta","doi":"10.1109/LEOS.1996.571586","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571586","url":null,"abstract":"In conclusion, we have demonstrated the use of novel carbon delta doped layers in the contact layer of InGaAs SQW GRINSCH lasers and compared with lasers consisting of Zn bulk doped contact layers. These carbon delta doped contact layer lasers are of interest for post growth tuning of the laser wavelength by quantum well intermixing without additional complications of dopant diffusion during subsequent processing.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131047754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Excitonic absorption saturation in a strain-balanced InGaAs/InAsP MQW 应变平衡InGaAs/InAsP MQW的激子吸收饱和
Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society Pub Date : 1996-11-18 DOI: 10.1109/LEOS.1996.571954
R. Mottahedeh, S. Haywood, D. Pattison, P. Kean, I. Bennion, M. Hopkinson, D. Prescott, M. Pate
{"title":"Excitonic absorption saturation in a strain-balanced InGaAs/InAsP MQW","authors":"R. Mottahedeh, S. Haywood, D. Pattison, P. Kean, I. Bennion, M. Hopkinson, D. Prescott, M. Pate","doi":"10.1109/LEOS.1996.571954","DOIUrl":"https://doi.org/10.1109/LEOS.1996.571954","url":null,"abstract":"Both linear and nonlinear absorption have been studied in a strain-balanced InAsP/InGaAs structure at room temperature. The sample, known as M552 was grown by solid source MBE. It consisted of 10 periods of 113 /spl Aring/ In/sub 0.44/Ga/sub 0.56/As/103 /spl Aring/ InAs/sub 0.2/P/sub 0.8/ in a pin diode configuration. X-ray diffraction indicated that there was 0.6% tensile strain in the InGaAs well and 0.6% compressive strain in the InAsP barrier. Using a 4 band k.p model which takes into account the strain we calculate the barriers heights seen by the n=l electron, heavy and light hole subbands to be 1O7 meV, 181 meV and 239 meV respectively.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132540718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High power Al-free 808 nm laser bars 高功率无铝808nm激光棒
Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society Pub Date : 1996-11-18 DOI: 10.1109/LEOS.1996.565115
J. Nappi, A. Ovtchinnikov, H. Asonen, S. Heinemann, F. Daiminger
{"title":"High power Al-free 808 nm laser bars","authors":"J. Nappi, A. Ovtchinnikov, H. Asonen, S. Heinemann, F. Daiminger","doi":"10.1109/LEOS.1996.565115","DOIUrl":"https://doi.org/10.1109/LEOS.1996.565115","url":null,"abstract":"We have grown Al-free GaInAsP/GaInP 808 nm strained single quantum well laser structures by the gas source molecular beam epitaxy method. Processed laser bars are shown to possess very good performance in terms of efficiency and short term reliability. They could replace AlGaAs laser bars in high power applications if the future long term reliability tests correlate with the present short term reliability data.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128352244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
首页 上一页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信