GaInP量子阱激光器的微分效率

Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society Pub Date : 1996-11-18 DOI:10.1109/LEOS.1996.565240

P. Smowton, P. Blood

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引用次数: 0

摘要

利用自发发射光谱的实验测量，我们分离了电流扩展和费米能级钉住对GaInP激光二极管外差效率温度依赖性的影响。我们得出结论，导致外差效率随温度升高而降低的一个主要因素是由于井旁势垒区域的费米能级在阈值处不完全钉住导致注入效率降低，以及随着温度升高势垒重组增加。

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The differential efficiency of GaInP quantum well lasers

Using experimental measurements of spontaneous emission spectra, we have separated the effects that current spreading and Fermi-level pinning have on the temperature dependence of the external differential efficiency of GaInP laser diodes. We conclude that a major factor contributing to the decrease of external differential efficiency with increasing temperature is a decrease in injection efficiency due to incomplete Fermi level pinning at threshold in the barrier regions alongside the well, and an increase in barrier recombination as the temperature increases.

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Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society

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