新型碳δ掺杂接触层InGaAs GRINSCH-SQW激光器

Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society Pub Date : 1996-11-18 DOI:10.1109/LEOS.1996.571586

S. Yuan, Gang Li, H. Tan, C. Jagadish, F. Karouta

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引用次数: 4

摘要

总之，我们证明了在InGaAs SQW GRINSCH激光器的接触层中使用了新型的碳δ掺杂层，并与由Zn块掺杂接触层组成的激光器进行了比较。这些碳δ掺杂接触层激光器对通过量子阱混合来实现激光波长的生长后调谐很感兴趣，而在随后的加工过程中没有额外的掺杂扩散并发症。

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InGaAs GRINSCH-SQW lasers with novel carbon delta doped contact layer

In conclusion, we have demonstrated the use of novel carbon delta doped layers in the contact layer of InGaAs SQW GRINSCH lasers and compared with lasers consisting of Zn bulk doped contact layers. These carbon delta doped contact layer lasers are of interest for post growth tuning of the laser wavelength by quantum well intermixing without additional complications of dopant diffusion during subsequent processing.

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Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society

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