高功率可见激光二极管阵列

Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society Pub Date : 1996-11-18 DOI:10.1109/LEOS.1996.565238

P. Savolainen, M. Pessa, S. Heinemann, F. Daiminger

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引用次数: 2

摘要

对固体材料的兴趣，包括铬掺杂LiCaAlF/sub 6/ (LiCaF)和铬掺杂LiSrAlF/sub 6/ (LiSaF)，产生了对波长范围为650- 690nm的泵浦二极管的需求。然而，由于高阈值电流密度(J/sub - th/)，适度的外量子效率(/spl eta//sub - d/)和低特性温度(T/sub - 0/)，这些可见激光二极管表现出相当低的输出功率。本文报道了GaInP/AlGaInP单量子阱可见激光阵列在675 nm处工作的连续波峰值功率高达24 W，适合抽运固态材料的特性。

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High power visible laser diode arrays

Interest in solid state materials, including chromium doped LiCaAlF/sub 6/ (LiCaF) and chromium doped LiSrAlF/sub 6/ (LiSaF), has created a need for pump diodes in the wavelength range of 650-690 nm. However, these visible laser diodes exhibit rather low output power due to high threshold current densities (J/sub th/), modest external quantum efficiency (/spl eta//sub d/) and low characteristic temperature (T/sub 0/). In this paper we report characteristics of GaInP/AlGaInP single quantum well visible laser arrays operating up to a CW peak power of 24 W at 675 nm, which are suitable for pumping solid state materials.

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Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society

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