A study of structures with Al-free QWs in AlGaAs waveguides for laser diodes emitting at 800 nm

Abstract

High power laser diodes emitting at 800 nm using strained GaAsP- and unstrained InGaAsP-SQWs in the active region are investigated. A very small far field angle of 23/spl deg/ and a high efficiency of 1.1 W/A for 1000 /spl mu/m long laser diodes are achieved. A 1 cm bar with 37.5 % active area shows a CW-output power of 60 W.