2019 IEEE 8th International Workshop on Advances in Sensors and Interfaces (IWASI)最新文献

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All-solid-state Reference Electrodes for analytical applications 用于分析应用的全固态参考电极
2019 IEEE 8th International Workshop on Advances in Sensors and Interfaces (IWASI) Pub Date : 2019-06-13 DOI: 10.1109/IWASI.2019.8791382
F. Criscuolo, Marco Galfione, S. Carrara, G. Micheli
{"title":"All-solid-state Reference Electrodes for analytical applications","authors":"F. Criscuolo, Marco Galfione, S. Carrara, G. Micheli","doi":"10.1109/IWASI.2019.8791382","DOIUrl":"https://doi.org/10.1109/IWASI.2019.8791382","url":null,"abstract":"The increasing development of electrochemical wearable and Lab-On-a-Chip (LOC) sensors have created the urgent need of efficient and stable miniaturized Reference Electrodes (REs). Ag/AgCl REs are the simplest, most common and environmental friendly REs. Conventional liquid-filled REs are not suitable for the portable applications because of the difficult trapping of the solution in miniaturized electrodes and of the high sensitivity to temperature and pressure variations. In recent years several attempts to build all-solid-state REs have been proposed in literature. However, many challenges still need to be overcome before reaching the commercialization stage, including the continuous leaching of the loaded ions and the influence of the sample solution on the interfacial potential. In this paper, we investigate and compare different routes to fabricate solid- contacts REs. The produced REs are used for the calibration of nanostructured potentiometric sensors. The different stability at various chlorides concentrations and pH is also investigated. Finally, their voltammetric response is compared to a Double Junction (DJ) RE.","PeriodicalId":330672,"journal":{"name":"2019 IEEE 8th International Workshop on Advances in Sensors and Interfaces (IWASI)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116441215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
From Open-Loop to Closed-Loop Single-VCO-Based Sensor-to-Digital Converter Architectures: theoretical analysis and comparison 从开环到闭环基于单vco的传感器-数字转换器架构:理论分析和比较
2019 IEEE 8th International Workshop on Advances in Sensors and Interfaces (IWASI) Pub Date : 2019-06-13 DOI: 10.1109/IWASI.2019.8791296
E. Sacco, Johan Vergauwen, G. Gielen
{"title":"From Open-Loop to Closed-Loop Single-VCO-Based Sensor-to-Digital Converter Architectures: theoretical analysis and comparison","authors":"E. Sacco, Johan Vergauwen, G. Gielen","doi":"10.1109/IWASI.2019.8791296","DOIUrl":"https://doi.org/10.1109/IWASI.2019.8791296","url":null,"abstract":"Sensor interface circuits are traditionally based on analog approaches. Recently, time-based architectures have become more popular thanks to their highly-digital scalable implementation. However, the poor VCO linearity limits the achievable overall linearity. This paper presents a novel single- VCO-based sensor interface architecture in closed-loop configuration, thus ensuring higher linearity. Models are proposed and analytic expressions are derived to estimate the sensor interface resolution based on the characteristics and noise performance of the single building blocks. Based on frequency-domain models, the STF and the NTF are derived for both the open-loop and the closed-loop configuration, and the SNR is calculated. The closed- loop architecture can achieve the same resolution as the open- loop one, provided that the feedback circuit noise is negligible compared to the other sources of noise, while ensuring a better linearity at the expense of lower speed and a small area and power overhead.","PeriodicalId":330672,"journal":{"name":"2019 IEEE 8th International Workshop on Advances in Sensors and Interfaces (IWASI)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130627215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Effect of the ionic-strength of the gating-solution on a bioelectronic response 门控溶液的离子强度对生物电子响应的影响
2019 IEEE 8th International Workshop on Advances in Sensors and Interfaces (IWASI) Pub Date : 2019-06-13 DOI: 10.1109/IWASI.2019.8791318
E. Macchia, K. Manoli, Brigitte Holzer, C. Franco, F. Torricelli, R. Picca, G. Palazzo, G. Scamarcio, L. Torsi
{"title":"Effect of the ionic-strength of the gating-solution on a bioelectronic response","authors":"E. Macchia, K. Manoli, Brigitte Holzer, C. Franco, F. Torricelli, R. Picca, G. Palazzo, G. Scamarcio, L. Torsi","doi":"10.1109/IWASI.2019.8791318","DOIUrl":"https://doi.org/10.1109/IWASI.2019.8791318","url":null,"abstract":"Bioelectronic organic transistors have been recently proposed as a disruptive wide-field label-free single-molecule biosensing technology. Key relevant for this millimetric sized electrolyte-gated field-effect-transistor is a self-assembled-monolayer attached to the gate comprising a highly-packed layer of recognition elements. Here a dedicated study of the FET sensing response as a function of the salinity of the electrolyte solution is proposed. It has been demonstrated that the device response is dramatically reduced at high ionic strength and this offer the rationale for choosing to operate the device in pure water where the Debye length, λD, is 100 nm.","PeriodicalId":330672,"journal":{"name":"2019 IEEE 8th International Workshop on Advances in Sensors and Interfaces (IWASI)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128262907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Is Innovating in a large high-tech multinational company possible? 在一家大型高科技跨国公司进行创新可能吗?
2019 IEEE 8th International Workshop on Advances in Sensors and Interfaces (IWASI) Pub Date : 2019-06-13 DOI: 10.1109/IWASI.2019.8791316
B. Vigna
{"title":"Is Innovating in a large high-tech multinational company possible?","authors":"B. Vigna","doi":"10.1109/IWASI.2019.8791316","DOIUrl":"https://doi.org/10.1109/IWASI.2019.8791316","url":null,"abstract":"Innovation requires vision, sustained resources, dedication, technical and human skills, stamina and last but not least, reward.","PeriodicalId":330672,"journal":{"name":"2019 IEEE 8th International Workshop on Advances in Sensors and Interfaces (IWASI)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133358701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A label-free immunosensor based on a graphene water-gated field-effect transistor 基于石墨烯水门控场效应晶体管的无标签免疫传感器
2019 IEEE 8th International Workshop on Advances in Sensors and Interfaces (IWASI) Pub Date : 2019-06-13 DOI: 10.1109/IWASI.2019.8791429
R. Picca, D. Blasi, E. Macchia, K. Manoli, C. Franco, G. Scamarcio, F. Torricelli, A. Zurutuza, Ilargi Napal, A. Centeno, L. Torsi
{"title":"A label-free immunosensor based on a graphene water-gated field-effect transistor","authors":"R. Picca, D. Blasi, E. Macchia, K. Manoli, C. Franco, G. Scamarcio, F. Torricelli, A. Zurutuza, Ilargi Napal, A. Centeno, L. Torsi","doi":"10.1109/IWASI.2019.8791429","DOIUrl":"https://doi.org/10.1109/IWASI.2019.8791429","url":null,"abstract":"Electrolyte-gated graphene field-effect transistors are here proposed for biosensing applications. To this end, a label-free immunosensor based on this technology is employed for the sensitive and selective detection of IgG. Differently from the typical approach based on the bioreceptor immobilization onto a graphene layer, in this work sensitivity in the lower femtomolar range can be reached thanks to the formation of a closely packed layer of anti-IgG receptors anchored to the gold gate electrode.","PeriodicalId":330672,"journal":{"name":"2019 IEEE 8th International Workshop on Advances in Sensors and Interfaces (IWASI)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123422855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A RISC-V Based Open Hardware Platform for Always-On Wearable Smart Sensing 基于RISC-V的可穿戴智能传感开放硬件平台
2019 IEEE 8th International Workshop on Advances in Sensors and Interfaces (IWASI) Pub Date : 2019-06-13 DOI: 10.1109/IWASI.2019.8791364
M. Eggimann, Stefan Mach, M. Magno, L. Benini
{"title":"A RISC-V Based Open Hardware Platform for Always-On Wearable Smart Sensing","authors":"M. Eggimann, Stefan Mach, M. Magno, L. Benini","doi":"10.1109/IWASI.2019.8791364","DOIUrl":"https://doi.org/10.1109/IWASI.2019.8791364","url":null,"abstract":"We present a fully programmable ultra-low-power embedded platform that hosts an \"electronic skin\" (E-skin) arrays of tactile sensors with up to 64 channels, ECG/EMG sensors up to 8 channels, inertial sensors, and a Bluetooth Low Energy 5.0 module. The platform’s compute engine is a heterogeneous multi-core parallel ultra-low power (PULP) processor based on RISC-V, capable of delivering up to 2.5 GOPS, within a 55 mW power consumption envelope, which makes the platform ideal for battery-powered always-on operation. Experimental results show a peak of 38.3x energy efficiency increase (0.7 V, 85 MHz) compared to ARM-Cortex-M microcontrollers with similar power budgets.","PeriodicalId":330672,"journal":{"name":"2019 IEEE 8th International Workshop on Advances in Sensors and Interfaces (IWASI)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125609984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Equivalent Electrical Model of a-Si:H Diodes for Lab-on-Chip Technology 芯片实验室用硅氢二极管等效电学模型
2019 IEEE 8th International Workshop on Advances in Sensors and Interfaces (IWASI) Pub Date : 2019-06-13 DOI: 10.1109/IWASI.2019.8791286
N. Lovecchio, A. Nascetti, G. Cesare, D. Caputo
{"title":"Equivalent Electrical Model of a-Si:H Diodes for Lab-on-Chip Technology","authors":"N. Lovecchio, A. Nascetti, G. Cesare, D. Caputo","doi":"10.1109/IWASI.2019.8791286","DOIUrl":"https://doi.org/10.1109/IWASI.2019.8791286","url":null,"abstract":"This work presents an equivalent electrical circuit of hydrogenated amorphous silicon diodes. It is constituted by four diodes and two resistances. Each element is directly related to the physical behavior of the thin film structure and models the different conduction regimes of the device.Results show a very good fitting of the experimental current-voltage characteristic up to several hundreds of millivolts in both forward and reverse bias conditions and demonstrate the suitability of the developed model for designing the diode fabrication parameters for specific application.","PeriodicalId":330672,"journal":{"name":"2019 IEEE 8th International Workshop on Advances in Sensors and Interfaces (IWASI)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121591563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Impact of Front-End Wearout Mechanisms on the Performance of a Ring Oscillator-Based Thermal Sensor 前端磨损机制对环形振荡器热传感器性能的影响
2019 IEEE 8th International Workshop on Advances in Sensors and Interfaces (IWASI) Pub Date : 2019-06-13 DOI: 10.1109/IWASI.2019.8791404
Rui Zhang, Kexin Yang, Taizhi Liu, L. Milor
{"title":"Impact of Front-End Wearout Mechanisms on the Performance of a Ring Oscillator-Based Thermal Sensor","authors":"Rui Zhang, Kexin Yang, Taizhi Liu, L. Milor","doi":"10.1109/IWASI.2019.8791404","DOIUrl":"https://doi.org/10.1109/IWASI.2019.8791404","url":null,"abstract":"This work studies how process/environmental parameters and front-end wearout mechanisms affect the performance of a FinFET-based thermal sensor which can be applied for on-chip temperature monitoring and temperature tracking for healthcare. This work has considered process/environmental parameters, such as gate length, supply voltage (VDD), bank capacitance, and temperature, and front-end wearout mechanisms, including bias temperature instability (BTI), hot carrier injection (HCI), and random telegraph noise (RTN). The impact of wearout mechanisms on each module was checked, and it was found that the ring oscillator is the most sensitive part. It was found that a larger gate length and lower VDD cause lower digital output values (indicating a lower operating frequency) and less power consumption. Wearout causes the sensor’s digital output values to decrease, and it causes more deviation in the digital output because of wearout induced parameter variations. It was found that linear recalibration is not a perfect solution for wearout induced parameter deviations of the digital output.","PeriodicalId":330672,"journal":{"name":"2019 IEEE 8th International Workshop on Advances in Sensors and Interfaces (IWASI)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116166151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
The Multicorder: A Handheld Multimodal Metabolomics-on-CMOS Sensing Platform 多阶:手持式cmos多模态代谢组学传感平台
2019 IEEE 8th International Workshop on Advances in Sensors and Interfaces (IWASI) Pub Date : 2019-06-13 DOI: 10.1109/IWASI.2019.8791347
V. Annese, Chunxiao Hu, Claudio Accarino, Christos Giagkoulovits, S. B. Patil, M. Al-Rawhani, J. Beeley, B. C. Cheah, Srinivas Velugotla, J. Grant, D. Cumming
{"title":"The Multicorder: A Handheld Multimodal Metabolomics-on-CMOS Sensing Platform","authors":"V. Annese, Chunxiao Hu, Claudio Accarino, Christos Giagkoulovits, S. B. Patil, M. Al-Rawhani, J. Beeley, B. C. Cheah, Srinivas Velugotla, J. Grant, D. Cumming","doi":"10.1109/IWASI.2019.8791347","DOIUrl":"https://doi.org/10.1109/IWASI.2019.8791347","url":null,"abstract":"The use of CMOS platforms in medical point-of-care applications, by integrating all steps from sample to data output, has the potential to reduce the diagnostic cost and the time from days to seconds. Here we present the ‘Multicorder’ technology, a handheld versatile multimodal platform for rapid metabolites quantification. The current platform is composed of a cartridge, a reader and a graphic user interface. The sensing core of the cartridge is the CMOS chip which integrates a 16x16 array of multi-sensor elements. Each element is composed of two optical and one chemical sensor. The platform is therefore capable of performing multi-mode measurements: namely colorimetric, chemiluminescence, pH sensing and surface plasmon resonance. In addition to the reader that is employed for addressing, data digitization and transmission, a tablet computer performs data collection, visualization, analysis and storage. In this paper, we demonstrate colorimetric, chemiluminescence and pH sensing on the same platform by on-chip quantification of different metabolites in their physiological range. The platform we have developed has the potential to lead the way to a new generation of commercial devices in the footsteps of the current commercial glucometers for quick multi-metabolite quantification for both acute and chronic medicines.","PeriodicalId":330672,"journal":{"name":"2019 IEEE 8th International Workshop on Advances in Sensors and Interfaces (IWASI)","volume":"s1-9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127196688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Study of the photon rejection of the ALPIDE pixel detector for medical applications 医用ALPIDE像素检测器的光子抑制研究
2019 IEEE 8th International Workshop on Advances in Sensors and Interfaces (IWASI) Pub Date : 2019-06-13 DOI: 10.1109/IWASI.2019.8791306
F. Colamaria, G. Trombetta, G. Bruno, G. Robertis, V. Manzari, A. Mazzone, C. Pastore
{"title":"Study of the photon rejection of the ALPIDE pixel detector for medical applications","authors":"F. Colamaria, G. Trombetta, G. Bruno, G. Robertis, V. Manzari, A. Mazzone, C. Pastore","doi":"10.1109/IWASI.2019.8791306","DOIUrl":"https://doi.org/10.1109/IWASI.2019.8791306","url":null,"abstract":"The ALPIDE silicon pixel detector, designed for the upgrade of the ALICE Inner Tracking System at the CERN LHC, is potentially well suited also for usage in other fields, as for medical applications. In particular, it could provide excellent capabilities as detecting probe for radioguided surgery in oncology, in association to positron-emitting radiotracers. In this respect, to quantify the expected performance it is crucial to measure the sensitivity to low-energy photons, which constitute the main background for revealing the positron radiation. Due to its thin epitaxial sensitive layer, the ALPIDE is expected to be almost insensitive to photons. A measurement of the ALPIDE efficiency for the detection of 662 keV photons, emitted by a Cs-137 radioactive source, is reported in this paper. A value of 0.089%, with a relative uncertainty of 20%, was obtained, granting an excellent rejection of low-energy photons compared to other proposed devices.","PeriodicalId":330672,"journal":{"name":"2019 IEEE 8th International Workshop on Advances in Sensors and Interfaces (IWASI)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125380901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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