芯片实验室用硅氢二极管等效电学模型

2019 IEEE 8th International Workshop on Advances in Sensors and Interfaces (IWASI) Pub Date : 2019-06-13 DOI:10.1109/IWASI.2019.8791286

N. Lovecchio, A. Nascetti, G. Cesare, D. Caputo

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引用次数: 2

摘要

本文提出了一种氢化非晶硅二极管等效电路。它由四个二极管和两个电阻组成。每个元件都与薄膜结构的物理行为直接相关，并模拟了器件的不同传导机制。结果表明，在正向和反向偏置条件下，实验电流-电压特性都能很好地拟合到几百毫伏，并证明了所建立的模型对于设计特定应用的二极管制造参数的适用性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Equivalent Electrical Model of a-Si:H Diodes for Lab-on-Chip Technology

This work presents an equivalent electrical circuit of hydrogenated amorphous silicon diodes. It is constituted by four diodes and two resistances. Each element is directly related to the physical behavior of the thin film structure and models the different conduction regimes of the device.Results show a very good fitting of the experimental current-voltage characteristic up to several hundreds of millivolts in both forward and reverse bias conditions and demonstrate the suitability of the developed model for designing the diode fabrication parameters for specific application.

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来源期刊

2019 IEEE 8th International Workshop on Advances in Sensors and Interfaces (IWASI)

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