2008 33rd IEEE Photovoltaic Specialists Conference最新文献

Modeling the generation and dissociation of the boron-oxygen complex in B-Doped Cz-Si 模拟硼掺杂Cz-Si中硼氧配合物的生成和解离

2008 33rd IEEE Photovoltaic Specialists Conference Pub Date : 2008-05-11 DOI: 10.1109/PVSC.2008.4922482

B. Lim, K. Bothe, Jan Schmidt

引用次数: 0

Experimental and theoretical analysis of the conversion efficiency of ITO- nSi solar cells fabricated by a low-cost spray deposition technique 低成本喷雾沉积技术制备ITO- nSi太阳能电池转换效率的实验与理论分析

2008 33rd IEEE Photovoltaic Specialists Conference Pub Date : 2008-05-11 DOI: 10.1109/PVSC.2008.4922445

O. Malik, F. J. De la Hidalga-W, C. Zuniga-I, A. Torres-J, G. Ruiz-T

引用次数: 1

Development of combined a-Si Photovoltaic/Thermal system with Biodiesel distillation process in Thailand 泰国生物柴油蒸馏法复合硅光伏/热系统的开发

2008 33rd IEEE Photovoltaic Specialists Conference Pub Date : 2008-05-11 DOI: 10.1109/PVSC.2008.4922832

J. Phongsitong, T. Nualboonrueng, P. Sichanutgrist

引用次数: 1

Lightweight, low cost GaAs solar cells on 4″ epitaxial liftoff (ELO) wafers 4块″外延提升(ELO)晶圆上的轻质、低成本砷化镓太阳能电池

2008 33rd IEEE Photovoltaic Specialists Conference Pub Date : 2008-05-11 DOI: 10.1109/PVSC.2008.4922900

R. Tatavarti, G. Hillier, A. Džanković, G. Martin, F. Tuminello, R. Navaratnarajah, G. Du, D. Vu, N. Pan

引用次数: 34

Comparison of high efficiency solar cells on large area n-type and p-type silicon wafers with screen-printed Aluminum-alloyed rear junction 网印铝合金后结大面积n型和p型硅片上高效太阳能电池的比较

2008 33rd IEEE Photovoltaic Specialists Conference Pub Date : 2008-05-11 DOI: 10.1109/PVSC.2008.4922760

D. Saynova, V. Mihailetchi, L. J. Geerligs, A. Weeber

引用次数: 1

Effect of absorber layer parameters on charge collection in thin-film CdS/CdTe solar cells 吸收层参数对薄膜CdS/CdTe太阳能电池电荷收集的影响

2008 33rd IEEE Photovoltaic Specialists Conference Pub Date : 2008-05-11 DOI: 10.1109/PVSC.2008.4922888

L. Kosyachenko, E. Grushko, O. Maslyanchuk, X. Mathew

引用次数: 3

Understanding the mechanism of light induced plating of silver on screen-printed contacts for high sheet resistance emitters with low surface phosphorus concentration 了解低表面磷浓度高片阻发射体丝网印刷触点光致镀银机理

2008 33rd IEEE Photovoltaic Specialists Conference Pub Date : 2008-05-11 DOI: 10.1109/PVSC.2008.4922674

A. Ebong, D.S. Kim, A. Rohatgi, W. Zhang

{"title":"Understanding the mechanism of light induced plating of silver on screen-printed contacts for high sheet resistance emitters with low surface phosphorus concentration","authors":"A. Ebong, D.S. Kim, A. Rohatgi, W. Zhang","doi":"10.1109/PVSC.2008.4922674","DOIUrl":"https://doi.org/10.1109/PVSC.2008.4922674","url":null,"abstract":"The high contact resistance associated with emitters with low phosphorus surface concentration (Ns) can be reduced by forming gas anneal, short time dip in one percent hydrofluoric acid (HF) or light induced plating (LIP) of silver metal on the screen-printed contacts. In this study, a 6% improvement in fill factor was noted after the cells were annealed in forming gas, or dipped in HF or immersed in LIP solution for a short time. The FGA affect the entire contacts area while the HF and LIP solution penetrates the edges of the grid by ∼10μm. After each treatment, only the contact resistance decreased but the finger resistance remained unchanged. This suggests thinning of glass layer at the edges of the gridlines during HF dip and LIP for short time. However, a combination of HF dip and longtime LIP of Ag produced highest fill factor because of the decrease in contact and gridline resistance. Therefore, during the longtime LIP of Ag on screen-printed contacts, the solution thins the glass layer at the edge of the finger before the Ag plates to both Ag crystallites and the gridline. This is supported by the SEM cross section of the gridline, which shows no glass layer at the edges of the plated finger.","PeriodicalId":330521,"journal":{"name":"2008 33rd IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125858563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Laser-doped silicon solar cells by Laser Chemical Processing (LCP) exceeding 20% efficiency 激光化学加工(LCP)的掺硅太阳能电池效率超过20%

2008 33rd IEEE Photovoltaic Specialists Conference Pub Date : 2008-05-11 DOI: 10.1109/PVSC.2008.4922848

D. Kray, M. Aleman, A. Fell, S. Hopman, K. Mayer, M. Mesec, R. Muller, G. Willeke, S. Glunz, B. Bitnar, D. Neuhaus, R. Ludemann, T. Schlenker, D. Manz, A. Bentzen, E. Sauar, A. Pauchard, B. Richerzhagen

引用次数: 58

Development of wide band gap Cd1-XMgXTe/CdS top cells for tandem devices 用于串联器件的宽带隙Cd1-XMgXTe/CdS顶电池的研制

2008 33rd IEEE Photovoltaic Specialists Conference Pub Date : 2008-05-11 DOI: 10.1109/PVSC.2008.4922634

O. Martinez, R. C. Palomera, J. Enrı́quez, C. Alonso, Xiangxin Liu, N. R. Mathews, X. Mathew, A. Compaan

{"title":"Development of wide band gap Cd1-XMgXTe/CdS top cells for tandem devices","authors":"O. Martinez, R. C. Palomera, J. Enrı́quez, C. Alonso, Xiangxin Liu, N. R. Mathews, X. Mathew, A. Compaan","doi":"10.1109/PVSC.2008.4922634","DOIUrl":"https://doi.org/10.1109/PVSC.2008.4922634","url":null,"abstract":"In order to achieve advances in CdTe technology, we are continuing our efforts in developing wide band gap ternary alloy films based on CdTe. This approach will help in harnessing the already existing CdTe technology to develop high efficiency tandem devices. The band gap of Cd1-xMgxTe can be easily tuned from 1.48 to 1.8 eV (x=0 to 0.17). Close match of the lattice constant of MgTe with CdTe and the apparent complete miscibility of MgTe in CdTe and the rapid increase in band gap with Mg content gives the flexibility to prepare material with appropriate band gap for current- matching in a tandem solar cell. In this paper development of Cd1-xMgxTe films by vacuum co-evaporation and prototype Cd1-xMgxTe/CdS solar cells are reported. The co-evaporated films on large area substrates exhibited high spatial uniformity. We have used different experimental techniques such as XRD, Raman, PL, UV-VIS spectroscopy, and opto-electronic tools for studying the effect of Mg incorporation in to the lattice of CdTe. Evidences of lattice perturbations due to the incorporation of Mg were observed in XRD and Raman data, however no phase segregation was observed in the XRD spectra. We are continuing our investigation of the effect of post deposition chloride treatment and annealing on the band gap stability of the Cd1-xMgxTe films. Films chloride treated with MgCl2 exhibited better stability compared with those films annealed in CdCl2 vapor. However, our preliminary data on the CdS/Cd1-xMgxTe devices show that CdCl2 vapor treatment is beneficial for attaining better efficiency. Prototype devices of the configuration Tec7/CdS/Cd1-xMgxTe/Cu-Au was developed with Cd1-xMgxTe films with different x values. Efficiency varies in the range 2 to 4.6% depending on the band gap of the absorber.","PeriodicalId":330521,"journal":{"name":"2008 33rd IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114931712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Initial test bed for Very High Efficiency Solar Cell 非常高效太阳能电池的初始试验台

2008 33rd IEEE Photovoltaic Specialists Conference Pub Date : 2008-05-11 DOI: 10.1109/PVSC.2008.4922737

A. Barnett, Xiaoting Wang, N. Waite, P. Murcia, C. Honsberg, D. Kirkpatrick, D. Laubacher, F. Kiamilev, K. Goossen, M. Wanlass, M. Steiner, Richard Schwartz, J. Gray, Allen L. Gray, P. Sharps, K. Emery, L. Kazmerski

{"title":"Initial test bed for Very High Efficiency Solar Cell","authors":"A. Barnett, Xiaoting Wang, N. Waite, P. Murcia, C. Honsberg, D. Kirkpatrick, D. Laubacher, F. Kiamilev, K. Goossen, M. Wanlass, M. Steiner, Richard Schwartz, J. Gray, Allen L. Gray, P. Sharps, K. Emery, L. Kazmerski","doi":"10.1109/PVSC.2008.4922737","DOIUrl":"https://doi.org/10.1109/PVSC.2008.4922737","url":null,"abstract":"Very High Efficiency Solar Cell (VHESC) program is developing integrated optical system—photovoltaic modules for portable applications that operate at greater than 50 percent efficiency. We are integrating the optical design with the solar cell design, and we have entered previously unoccupied design space [1]. A test bed for rapid development and verification of performance of subsystems is also being developed. The results and analysis of the first complete integrated optics and solar cells on this test bed are reported. The demonstration has achieved efficiency greater than 36%. Analysis shows a direct path to efficiencies greater than 40%. These initial results have not been verified by NREL or any other 3rd party. We have previously reported the sum of the solar cell efficiencies to be over 42%, and optical subsystem efficiency greater than 93% [2]. Our approach is driven by proven quantitative models for the solar cell design, the optical design and the integration of the two.","PeriodicalId":330521,"journal":{"name":"2008 33rd IEEE Photovoltaic Specialists Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115514424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 10