低成本喷雾沉积技术制备ITO- nSi太阳能电池转换效率的实验与理论分析

2008 33rd IEEE Photovoltaic Specialists Conference Pub Date : 2008-05-11 DOI:10.1109/PVSC.2008.4922445

O. Malik, F. J. De la Hidalga-W, C. Zuniga-I, A. Torres-J, G. Ruiz-T

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引用次数: 1

摘要

与使用肖特基二极管的ITO-nSi太阳能电池相比，倒置p-n ITO-nSi异质结是使用单晶硅的最有前途的低成本太阳能电池。结果表明，在10个Ω-cm硅衬底上制备的ITO-nSi倒置太阳能电池在AM0和AM1.5光照条件下的转换效率分别为10.8%和12.1%。利用实际的实验参数，我们的理论分析预测，使用低电阻率硅衬底可以实现高达15%的转换效率。

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Experimental and theoretical analysis of the conversion efficiency of ITO- nSi solar cells fabricated by a low-cost spray deposition technique

Inversion p-n ITO-nSi heterojunctions are the most promising low-cost solar cells using mono-crystalline silicon in comparison with ITO-nSi solar cells operating as Schottky diodes. It is shown that ITO-nSi inversion solar cells fabricated on 10 Ω-cm silicon substrates present a conversion efficiency of 10.8 and 12.1% under AM0 and AM1.5 illumination conditions, respectively. Using actual experimental parameters, our theoretical analysis predicts an improved conversion efficiency up to 15% that can be achieved practically using low resistivity silicon substrates.

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2008 33rd IEEE Photovoltaic Specialists Conference

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