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IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers最新文献

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The IRIDIUM K-band MMIC chip set 铱k波段MMIC芯片组
IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers Pub Date : 1995-05-15 DOI: 10.1109/MCS.1995.470999
B.T. Agar, D.S. Bowser, K. Buer, D. Corman, C. Grondahl
{"title":"The IRIDIUM K-band MMIC chip set","authors":"B.T. Agar, D.S. Bowser, K. Buer, D. Corman, C. Grondahl","doi":"10.1109/MCS.1995.470999","DOIUrl":"https://doi.org/10.1109/MCS.1995.470999","url":null,"abstract":"A set of 16 K-band MMIC chips has been developed for the satellites in the IRIDIUM communications program. Both high power and low noise 0.25 /spl mu/m PHEMT technologies were used to develop this MMIC chip set. The MMICs consist of a broad band frequency doubler, up and down converters, high power amplifiers, variable gain amplifiers, low noise amplifiers, and an IF amplifier. A noise figure of less than 3.3 dB at 29 GHz and output power of over 4 watts at 23.3 GHz were achieved with no RF tuning. This paper describes statistical device characterization, design details, measured results, and integration of these MMIC chips into a high density multi-chip module (MCM).<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123020502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Microwave tunable active filter design in MMIC technology using recursive concepts 微波可调谐有源滤波器设计在MMIC技术中使用递归概念
IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers Pub Date : 1995-05-15 DOI: 10.1109/MCS.1995.470980
M. Delmond, L. Billonnet, B. Jarry, P. Guillon
{"title":"Microwave tunable active filter design in MMIC technology using recursive concepts","authors":"M. Delmond, L. Billonnet, B. Jarry, P. Guillon","doi":"10.1109/MCS.1995.470980","DOIUrl":"https://doi.org/10.1109/MCS.1995.470980","url":null,"abstract":"In this article, two active filters in the X-band, using low frequency transversal and recursive principles are presented. Previously implemented in hybrid technology, those two structures are developed here using MMIC technology. In a first step, studies of the different functional blocks leading to the design of such original structures are described. Then we validate our approach with the measured results for these two filters.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126027951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 33
Hot-electron-induced degradation of pseudomorphic high-electron mobility transistors 伪晶高电子迁移率晶体管的热电子诱导退化
IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers Pub Date : 1995-05-15 DOI: 10.1109/MCS.1995.470978
Y. Tkachenko, C. Wei, J.C.M. Hwang, T. Harris, R. Grober, D. Hwang, L. Aucoin, S. Shanfield
{"title":"Hot-electron-induced degradation of pseudomorphic high-electron mobility transistors","authors":"Y. Tkachenko, C. Wei, J.C.M. Hwang, T. Harris, R. Grober, D. Hwang, L. Aucoin, S. Shanfield","doi":"10.1109/MCS.1995.470978","DOIUrl":"https://doi.org/10.1109/MCS.1995.470978","url":null,"abstract":"Pseudomorphic high-electron mobility transistors have been found to undergo hot-electron-induced degradation. Due to the negative temperature dependence of hot-electron effects, it will be necessary to conduct electrical and temperature stress tests separately, in order to ascertain the reliability of these transistors under normal operating conditions.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"202 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123037526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 39
Low cost miniaturized EHF SATCOM transceiver featuring HEMT MMICs and LTCC multilayer packaging 具有HEMT mmic和LTCC多层封装的低成本小型化EHF卫星通信收发器
IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers Pub Date : 1995-05-15 DOI: 10.1109/MCS.1995.470996
J. Lester, M. Ahmadi, S. Peratoner, J. Hathaway, D. Garske, P. Chow
{"title":"Low cost miniaturized EHF SATCOM transceiver featuring HEMT MMICs and LTCC multilayer packaging","authors":"J. Lester, M. Ahmadi, S. Peratoner, J. Hathaway, D. Garske, P. Chow","doi":"10.1109/MCS.1995.470996","DOIUrl":"https://doi.org/10.1109/MCS.1995.470996","url":null,"abstract":"The authors present a 20 GHz downconverter and a 44 GHz upconverter for a low cost miniaturized transceiver for EHF SATCOM terminal applications. The hardware features a set of passivated pseudomorphic InGaAs HEMT MMICs including a 20 GHz balanced low noise amplifier and a 44 GHz 100 mW driver amplifier. The upconverter input and the LO input of the downconverter feature built-in-test (BIT) with on-chip detectors. The downconverter is packaged in a low temperature co-fired ceramic (LTCC) substrate, with integrated RF and DC interconnects, printed resistors, and a buried stripline IF filter.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123890663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
GaAs monolithic single-chip transceiver GaAs单片收发器
IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers Pub Date : 1995-05-15 DOI: 10.1109/MCS.1995.470997
A. Boveda, F. Ortigoso
{"title":"GaAs monolithic single-chip transceiver","authors":"A. Boveda, F. Ortigoso","doi":"10.1109/MCS.1995.470997","DOIUrl":"https://doi.org/10.1109/MCS.1995.470997","url":null,"abstract":"A single-chip transmitter/receiver MMIC operating from 1.25 to 3 GHz and incorporating most of the RF functions of a modern communication system is presented. The device incorporates: a direct vector modulator with the necessary phase shifter circuits, an output amplifier for the transmitter, a low-noise amplifier and a down-converter with image rejection. The circuit has 60 MESFETs and more than 250 passive components in a 5.0/spl times/2.4 mm chip and has been manufactured using 0.5 micron GaAs MESFET process.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"222 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115586200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
5 watt high efficiency wideband 7 to 11 GHz HBT MMIC power amplifier 5瓦高效率宽带7至11 GHz HBT MMIC功率放大器
IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers Pub Date : 1995-05-15 DOI: 10.1109/MCS.1995.471000
J. Komiak, L.W. Yang
{"title":"5 watt high efficiency wideband 7 to 11 GHz HBT MMIC power amplifier","authors":"J. Komiak, L.W. Yang","doi":"10.1109/MCS.1995.471000","DOIUrl":"https://doi.org/10.1109/MCS.1995.471000","url":null,"abstract":"A fully monolithic HBT power amplifier that has established new benchmarks for bandwidth and efficiency at X-band is reported. Power-added efficiencies of 56% max/38% min/44.4% average across 7 to 11 GHz are the highest X-band efficiencies and widest bandwidth reported for MMIC HPA's. These amplifiers have demonstrated high power levels (up to 7.3 watts) with high gain (11 to 14.1 dB) under thermally challenging long pulse (500 /spl mu/sec) high duty cycle (25%) conditions. The amplifiers were fabricated using an advanced re-aligned AlGaAs/GaAs power HBT process with a plated bathtub heat sink.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"152 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116223072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Ka-band MMIC-based transceiver for battlefield combat identification system 基于ka波段mmic的战场作战识别系统收发器
IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers Pub Date : 1995-05-15 DOI: 10.1109/MCS.1995.470992
G. M. Nesbit, T. Dere, D. English, Vance Purdy, B. Parrish
{"title":"Ka-band MMIC-based transceiver for battlefield combat identification system","authors":"G. M. Nesbit, T. Dere, D. English, Vance Purdy, B. Parrish","doi":"10.1109/MCS.1995.470992","DOIUrl":"https://doi.org/10.1109/MCS.1995.470992","url":null,"abstract":"This paper describes how the MMIC technology is utilized to meet the US Army's need for near term solution in minimizing fratricide in the future engagement. One of the key assembly in the Battlefield Combat Identification System (BCIS) equipment set is the Ka-band MMIC transceiver unit. The MMIC transceiver is used to transmit and receive spread spectrum signal at 38 GHz. The design, integration and test of 13 GaAs MMIC chips in a single hermetically sealed housing (2.5/spl times/2.3/spl times/0.4 inches) is presented.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124896979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Reliability of InP-based HBT IC technology for high-speed, low-power applications 高速、低功耗应用中基于inp的HBT IC技术的可靠性
IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers Pub Date : 1995-05-15 DOI: 10.1109/MCS.1995.470979
M. Hafizi, W. Stanchina, F. Williams, J. Jensen
{"title":"Reliability of InP-based HBT IC technology for high-speed, low-power applications","authors":"M. Hafizi, W. Stanchina, F. Williams, J. Jensen","doi":"10.1109/MCS.1995.470979","DOIUrl":"https://doi.org/10.1109/MCS.1995.470979","url":null,"abstract":"We report on the reliability of an InP-based heterojunction bipolar transistor IC technology for very high-speed and low power applications. We have performed extensive accelerated lifetest experiments under bias and temperature stress and found mean-time-to-failures (MTTF) in excess of 10/sup 7/ hours at 125/spl deg/C junction temperatures. We have also exposed our devices to a hydrogen ambient, particularly important for integrated circuits in hermetically sealed packages. We did not observe any difference in the characteristics of devices with or without exposure to hydrogen ambient. In addition we have performed extensive lifetest experiments on tantalum-nitride (TaN) thin-film resistors (TFR) used in our IC process. Our TFR reliability performance exceeded the active device reliability, as required in a reliable IC process.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117022153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Ultra low power HFET down converter for wireless communication applications 用于无线通信应用的超低功率HFET下变频
IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers Pub Date : 1995-05-15 DOI: 10.1109/MCS.1995.470986
V. Nair, S. Tehrani, R. Vaitkus, D. Scheitlin
{"title":"Ultra low power HFET down converter for wireless communication applications","authors":"V. Nair, S. Tehrani, R. Vaitkus, D. Scheitlin","doi":"10.1109/MCS.1995.470986","DOIUrl":"https://doi.org/10.1109/MCS.1995.470986","url":null,"abstract":"AN ultra low power GaAs HFET (heterojunction FET) amplifier/mixer MMIC was designed and characterized for portable communication applications in the 900 MHz band. A completely monolithic LNA (80 mil/spl times/42 mil) achieved 10 dB gain, 2.5 dB NF and -4 dBm input IP3 at an operating current of 0.5 mA @ 1.0 V. A down converter, consisting of the LNA and a dual gate FET mixer achieved -117 dBm receiver sensitivity in the 900 MHz cellular band. The total power consumption of this miniature down converter was about 2 mW. The HFET down converter IC achieved the same receiver sensitivity as a MESFET down converter at 1/5th of the power. The extremely low power dissipation, high third order intercept point, high level of integration, and very good RF performance of this monolithic IC make it an ideal candidate for wireless applications.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115783623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Millimetre wave phase locked oscillator for mobile communication systems 移动通信系统用毫米波锁相振荡器
IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers Pub Date : 1995-05-15 DOI: 10.1109/MCS.1995.470993
I. Telliez, M. Camiade, P. Savary, P. Bourne-Yaonaba
{"title":"Millimetre wave phase locked oscillator for mobile communication systems","authors":"I. Telliez, M. Camiade, P. Savary, P. Bourne-Yaonaba","doi":"10.1109/MCS.1995.470993","DOIUrl":"https://doi.org/10.1109/MCS.1995.470993","url":null,"abstract":"A 56.8 GHz phase locked oscillator has been developed for broadband pico-cell networks in the 62 to 53 and 65 to 66 GHz bands. A set of millimetre wave MMICs has been produced using a 0.25 /spl mu/m HEMT low noise process. A 10 MHz reference is used to stabilise the loop with the help of a low frequency synthesiser at 200 MHz and a sampler at 14.2 GHz. Within the temperature range 0 to 50/spl deg/C, the output signals delivered at 56.8 GHz are higher than the specified 6.5 dBm/spl plusmn/1.5 dB. The phase noise is better than -100 dBc/Hz at 1 MHz from carrier and lower than -70 dBc/Hz at 10 kHz from carrier. A 9 mm/sup 2/ multifunction chip incorporating three basic functions at 55.8 GHz has been implemented. This approach avoids critical connections and demonstrates the capability and maturity of our monolithic technology.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130660443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
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