Y. Tkachenko, C. Wei, J.C.M. Hwang, T. Harris, R. Grober, D. Hwang, L. Aucoin, S. Shanfield
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Hot-electron-induced degradation of pseudomorphic high-electron mobility transistors
Pseudomorphic high-electron mobility transistors have been found to undergo hot-electron-induced degradation. Due to the negative temperature dependence of hot-electron effects, it will be necessary to conduct electrical and temperature stress tests separately, in order to ascertain the reliability of these transistors under normal operating conditions.<>
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