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IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers最新文献

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A monolithic integrated HEMT frontend in CPW technology from 10-50 GHz for measurement systems or broadband receivers 用于测量系统或宽带接收器的10-50 GHz CPW技术的单片集成HEMT前端
IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers Pub Date : 1900-01-01 DOI: 10.1109/MCS.1995.470960
R. Heilig, D. Hollmann, G. Baumann
{"title":"A monolithic integrated HEMT frontend in CPW technology from 10-50 GHz for measurement systems or broadband receivers","authors":"R. Heilig, D. Hollmann, G. Baumann","doi":"10.1109/MCS.1995.470960","DOIUrl":"https://doi.org/10.1109/MCS.1995.470960","url":null,"abstract":"In this paper the design, performance and fabrication of a broadband frontend is shown. The frontend consists of a broadband matrix distributed amplifier with a gain of about 10 dB and a noise figure of 6.5 dB, a four stages distributed amplifier with 5 dB gain and an output power of 12 dBm, and a distributed mixer with a conversion gain of 0 dB with a LO-power of 0 dBm including the LO buffer amplifier. The active devices are 0.2 /spl mu/m recessed gate AlGaAs HEMTs and the coplanar waveguide is used as the propagation medium. The devices have been simulated by using own models for the active device and the passive coplanar elements. For the mixer design a nonlinear HEMT model was used. The total size of the frontend is 6 mm/spl times/6 mm including bias networks and block capacitors.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126022243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A novel baseband-1.5 GHz monolithic HBT variable gain amplifier with PIN diode gain control 一种基于PIN二极管增益控制的新型基带1.5 GHz单片HBT变增益放大器
IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers Pub Date : 1900-01-01 DOI: 10.1109/MCS.1995.470963
K. Kobayashi, A. Oki, L. Tran, D. Streit
{"title":"A novel baseband-1.5 GHz monolithic HBT variable gain amplifier with PIN diode gain control","authors":"K. Kobayashi, A. Oki, L. Tran, D. Streit","doi":"10.1109/MCS.1995.470963","DOIUrl":"https://doi.org/10.1109/MCS.1995.470963","url":null,"abstract":"This paper reports on a GaAs HBT Variable Gain Amplifier (VGA) which monolithically integrates a GaAs PIN diode as a variable resistor to achieve wide gain control. The PIN diode is made from the intrinsic MBE layers of the HBT collector-base junction which consists of a 7000 /spl Aring/ thick i-region. The novel VGA topology employs active feedback and output buffering to obtain high IP3 performance and is the first PIN-HBT VGA reported of its kind. The VGA obtains 10 dB gain and over 25 dB of gain control range at 1 GHz. The output IP3 is +5.1 dBm and the noise figure is 9.3 dB at maximum gain. The corresponding input IP3 is +5.1 dBm and remains constant over gain control which is an attractive feature of the HBT-PIN VGA. The PIN diode VGA design is realized in a miniature 0.8/spl times/0.4 mm/sup 2/ area. Integrated with a previously developed HBT LNA, the resultant low noise VGA MMIC demonstrates 2.1 dB noise figure, >35 dB gain, +13.5 dBm OIP3, and over 25 dB of gain control at 1 GHz.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115352495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A PMHFET based MMIC gate mixer for Ka-band applications 一种用于ka波段应用的基于PMHFET的MMIC门混频器
IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers Pub Date : 1900-01-01 DOI: 10.1109/MCS.1995.470968
M. Matthes, J. Dieudonné, W. Stiebler, L. Klapproth
{"title":"A PMHFET based MMIC gate mixer for Ka-band applications","authors":"M. Matthes, J. Dieudonné, W. Stiebler, L. Klapproth","doi":"10.1109/MCS.1995.470968","DOIUrl":"https://doi.org/10.1109/MCS.1995.470968","url":null,"abstract":"A multipurpose MMIC gate mixer has been designed, fabricated and measured. The mixer exhibits a maximum conversion gain of about 0 dB in the frequency range of 32 GHz-38 GHz with an intermediate frequency (IF) of 100 MHz and an IF load of 50 /spl Omega/. With an external IF matching network a conversion gain up to 5 dB can be achieved. The mixer which consists of one pseudomorphic HFET represents state of the art performance.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126771971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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