用于无线通信应用的超低功率HFET下变频

IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers Pub Date : 1995-05-15 DOI:10.1109/MCS.1995.470986

V. Nair, S. Tehrani, R. Vaitkus, D. Scheitlin

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引用次数: 7

摘要

设计了一种用于900 MHz频段便携式通信的超低功耗GaAs异质结FET放大器/混频器MMIC。一个完整的单片LNA (80mil /spl倍/ 42mil)在0.5 mA @ 1.0 V的工作电流下实现了10db增益、2.5 dB NF和- 4dbm输入IP3。由LNA和双栅FET混频器组成的下变频器在900 MHz蜂窝频段内实现了-117 dBm的接收灵敏度。这个微型下变频器的总功耗约为2兆瓦。在功率为MESFET下变频1/5的情况下，HFET下变频IC实现了与MESFET下变频相同的接收器灵敏度。该单片集成电路具有极低的功耗、高三阶截距点、高集成度和非常好的射频性能，是无线应用的理想选择

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Ultra low power HFET down converter for wireless communication applications

AN ultra low power GaAs HFET (heterojunction FET) amplifier/mixer MMIC was designed and characterized for portable communication applications in the 900 MHz band. A completely monolithic LNA (80 mil/spl times/42 mil) achieved 10 dB gain, 2.5 dB NF and -4 dBm input IP3 at an operating current of 0.5 mA @ 1.0 V. A down converter, consisting of the LNA and a dual gate FET mixer achieved -117 dBm receiver sensitivity in the 900 MHz cellular band. The total power consumption of this miniature down converter was about 2 mW. The HFET down converter IC achieved the same receiver sensitivity as a MESFET down converter at 1/5th of the power. The extremely low power dissipation, high third order intercept point, high level of integration, and very good RF performance of this monolithic IC make it an ideal candidate for wireless applications.<>

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来源期刊

IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers

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