Sel''skokhoziaistvennye mashiny i tekhnologii最新文献

{"title":"Численное моделирование процесса роста кристаллов из расплавов на вращающемся диске","authors":"А. В. Скрыпников, К. А. Яковлев","doi":"10.34077/silicon2022-79","DOIUrl":"https://doi.org/10.34077/silicon2022-79","url":null,"abstract":"This paper proposes a general method for modeling traffic flow based on the use of Markov processes, different from the known methods and flow models as follows: fundamentals of the method applied to modeling traffic on roads with different number of lanes; number of velocity groups, the characteristics of which are studied move-ment is not limited; virtually unlimited range of variation of road conditions, traffic flow determines the mode; simulation results are not only the mean flow characteristics, but also in the flow characteristics of the motion of individual vehicles and individual stream type groups, which further Used To increase the reliability and accuracy of the figures of the car; input for the simulation of movement of cars in the flow simulation results are free mo-tion. This integrated approach allows to take into account the dynamics of the towing vehicle speed properties, extended the scope of the flow ; with substantial completeness reflected in vehicle operating characteristics of the parameters of the plan longitudinal and transverse profiles, the type and amount of pavement, road conditions. Using the method of Markov processes made the transition from a small number of velocity groups (2, 3 groups) to a continuous velocity distribution. There by achieved greater generality in the formation of the main provisions of the model. Some practical research model car traffic flow on a one-lane roads and two-lane roads (II–IV cate-gories).","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"17 12 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82885659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"ВРЭМ исследования структурно-морфологических трансформаций при золотоиндуцированной кристаллизации субоксида кремния","authors":"","doi":"10.34077/silicon2022-25","DOIUrl":"https://doi.org/10.34077/silicon2022-25","url":null,"abstract":"","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"73 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90807160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ван-дер-ваальсовый гетероэпитаксиальный рост слоистого SnSe2 на поверхности Si(111)","authors":"","doi":"10.34077/silicon2022-55","DOIUrl":"https://doi.org/10.34077/silicon2022-55","url":null,"abstract":"","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90988263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Квантово-химическое исследование структуры и колебательных спектров сверхрешеток Si/SiO2","authors":"","doi":"10.34077/silicon2022-129","DOIUrl":"https://doi.org/10.34077/silicon2022-129","url":null,"abstract":"","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"25 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84785113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"От процессов самоорганизации на поверхности кремния к субнанометровой метрологии","authors":"","doi":"10.34077/silicon2022-29","DOIUrl":"https://doi.org/10.34077/silicon2022-29","url":null,"abstract":"","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"28 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85134453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Функционализация развитой поверхности кремниевых наноструктур по данным синхротронных исследований","authors":"Ю. Ю. Турищев, А. Л. Терехов, А. И. Тонких, Денис Васильевич Захаров, В. Анисимов, О А Чувенкова, Ю А Юраков, В. Паринова, Д. А. Коюда, Б. В. Сеньковский","doi":"10.34077/silicon2022-75","DOIUrl":"https://doi.org/10.34077/silicon2022-75","url":null,"abstract":"Semiconductor solid solutions draw considerable attention of modern science and technology. Such structures open prospects to gradually change electronic and optical characteristics of semiconductor materials. A particular task concerns Si1-xSnx solid solutions, which can allow to control optical properties in the near-IR region, as well as to adjust charge carriers’ generation, recombination and transfer processes on their basis. These alloys would allow to create new optoelectronic devices, e. g., lasers, and cost-efficient thermoelectric converters. However, the substantial difference of Si and Sn lattice constants (approximately 17 at%) and a low mutual solubility of the elements constrains the creation of homogenous Si-Sn structures. This limitation can be overcome in non-equilibrium conditions, е. g., by using molecular beam epitaxy (MBE). The aim of this work is the study of MBE-grown strained Si1-xSnx solid solutions’ electronic structure by means of non-destructive techniques of X-ray spectroscopy: XANES (X-ray Absorption NearEdge Structure) and USXES (Ultra-Soft X-ray Emission Spectroscopy); and to analyze the chemical bonds in the resulting materials with the XPS (X-ray photoelectron spectroscopy) technique. These methods are efficient for investigations of local electronic structure of near-surface thin layers, thanks to high sensitivity to local environment of atoms under study, and due to usage of synchrotron radiation sources allowing to achieve high radiation intensity and energy resolution. The results of this work allow to confirm the formation of Si0,92 solid solutions having a lower Sn0,08 band, than Si, and smoothed density of states due to presence of large tin atoms in the silicon lattice. It is observed that the formation of solid solutions is accompanied by changes of Si and Sn atoms’ bond energy. If the sample is covered by a 10 nm thick capping Si layer, this layer is characterized by a bulk-like single crystalline Si structure and negligible strain level. Therefore, the absence of notable elastic strain in the upper capping Si layer manifests the pseudomorphic nature of the em-","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"12 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82155115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Моделирование и оптимизация параметров газового потока внутри газохроматографической колонки на основе кремния","authors":"Н. А. Аржанова, М. А. Проказников, А. В. Проказников","doi":"10.7868/S0544126914060027","DOIUrl":"https://doi.org/10.7868/S0544126914060027","url":null,"abstract":"","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"24 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79220545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Адгезионные и прочностные свойства фоторезистов для взрывной литографии","authors":"","doi":"10.34077/silicon2022-124","DOIUrl":"https://doi.org/10.34077/silicon2022-124","url":null,"abstract":"","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"101 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75865415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Изучение движения капель золота по поверхности Si(111) с помощью Монте-Карло моделирования","authors":"","doi":"10.34077/silicon2022-78","DOIUrl":"https://doi.org/10.34077/silicon2022-78","url":null,"abstract":"","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"183 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76205137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Атомарный слой дисилицида никеля на поверхности и в объеме кремния","authors":"","doi":"10.34077/silicon2022-41","DOIUrl":"https://doi.org/10.34077/silicon2022-41","url":null,"abstract":"","PeriodicalId":32503,"journal":{"name":"Sel''skokhoziaistvennye mashiny i tekhnologii","volume":"12 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77633963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}