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2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors最新文献

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Impact of multiple sub-melt laser scans on the activation and diffusion of shallow Boron junctions 多次亚熔体激光扫描对浅硼结活化和扩散的影响
2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2008-12-02 DOI: 10.1109/RTP.2008.4690547
E. Rosseel, W. Vandervorst, T. Clarysse, J. Goossens, A. Moussa, R. Lin, D. H. Petersen, P. Nielsen, O. Hansen, N. Bennett, N. Cowern
{"title":"Impact of multiple sub-melt laser scans on the activation and diffusion of shallow Boron junctions","authors":"E. Rosseel, W. Vandervorst, T. Clarysse, J. Goossens, A. Moussa, R. Lin, D. H. Petersen, P. Nielsen, O. Hansen, N. Bennett, N. Cowern","doi":"10.1109/RTP.2008.4690547","DOIUrl":"https://doi.org/10.1109/RTP.2008.4690547","url":null,"abstract":"Sub-melt laser annealing is a promising technique to achieve the required sheet resistance and junction depth specifications for the 32 nm technology node and beyond. In order to obtain a production worthy process with minimal sheet resistance variation at a macroscopic and microscopic level, careful process optimization is required. While macroscopic variations can easily be addressed using the proper spatial power compensation it is more difficult to completely eliminate the micro scale non-uniformity which is intimately linked to the laser beam profile, the amount of overlaps and the scan pitch. In this work, we will present micro scale sheet resistance uniformity measurements for shallow 0.5 keV B junctions and zoom in on the underlying effect of multiple subsequent laser scans. A variety of characterization techniques are used to extract the relevant junction parameters and the role of different implantation and anneal parameters will be explored. It turns out that the observed sheet resistance decrease with increasing number of laser scans is caused on one hand by a temperature dependent increase of the activation level, and on the other hand, by a non-negligible temperature and concentration dependent diffusion component.","PeriodicalId":317927,"journal":{"name":"2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128640894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Investigation of microwave annealed implanted layers with TWIN metrology system 用TWIN计量系统研究微波退火植入层
2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2008-12-02 DOI: 10.1109/RTP.2008.4690567
B. Lojek, H. Geiler
{"title":"Investigation of microwave annealed implanted layers with TWIN metrology system","authors":"B. Lojek, H. Geiler","doi":"10.1109/RTP.2008.4690567","DOIUrl":"https://doi.org/10.1109/RTP.2008.4690567","url":null,"abstract":"The study of the effects of microwave annealing of ion-implanted layers in silicon substrate evaluated by photo-thermal technique is reported. The technique allows nondestructive and fast characterization of the annihilation processes of damage layer defects as a function of microwave annealing conditions. The preliminary data are suggesting that the microwave field is affecting damaged and heavily doped regions, the remaining undamaged region of the semiconductor wafer is essentially transparent to the electromagnetic waves in the GHz wave range.","PeriodicalId":317927,"journal":{"name":"2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121827722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thermal and non-thermal kinetics of defects and dopant in Si Si中缺陷和掺杂物的热动力学和非热动力学
2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2008-12-02 DOI: 10.1109/RTP.2008.4690560
A. La Magna, G. Fisicaro, G. Mannino, V. Privitera, G. Piccitto, L. Vines, B. Svensson
{"title":"Thermal and non-thermal kinetics of defects and dopant in Si","authors":"A. La Magna, G. Fisicaro, G. Mannino, V. Privitera, G. Piccitto, L. Vines, B. Svensson","doi":"10.1109/RTP.2008.4690560","DOIUrl":"https://doi.org/10.1109/RTP.2008.4690560","url":null,"abstract":"A modeling approach is formalized and implemented to investigate the kinetics of the defects-dopant system in the extremely far-from-the equilibrium conditions induced by laser irradiation of Si. The master equations for the evolution of the defect-impurity system is rigorously obtained starting from the Boltzmann’s formalism. The formalism allows to simulate beyond the hypothesis of instantaneous equilibration of the local system energy to the lattice thermal field. Comparisons between simulations and experimental analysis of the processes are discussed. These results indicate the general reliability of the Si self-interstitial clusters energetic derived using conventional thermal processes. The impact of the formalism for other non-conventional annealing techniques is discussed.","PeriodicalId":317927,"journal":{"name":"2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121138912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature measurement in RTP: Past and future RTP中的温度测量:过去和未来
2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2008-12-02 DOI: 10.1109/RTP.2008.4690545
B. Adams
{"title":"Temperature measurement in RTP: Past and future","authors":"B. Adams","doi":"10.1109/RTP.2008.4690545","DOIUrl":"https://doi.org/10.1109/RTP.2008.4690545","url":null,"abstract":"RTP emerged as a mainstream technology during the last two decades in part by solving a difficult technical challenge, that of reliable temperature measurement using optical thermometry. Current thermal processing chambers are capable of controlling temperatures which change at hundreds of degrees celsius per second with repeatability of less than one degree with uniformity on the order of a degree. This is accomplished in a radiatively heated environment where the optical properties of the substrate may vary arbitrarily and contact with it is not acceptable or even feasible. This high degree of thermal stability has enabled the production of the current generation of integrated circuits. Processing requirements are pushing the limits of traditional lamp based technology, and new techniques for sub-second anneals are starting to emerge. With the development of the sub-second anneal, temperature heating and cooling rates may exceed millions of degrees per second, and temperature control may become the limiting factor as it was in the early days of the evolution of the industry.","PeriodicalId":317927,"journal":{"name":"2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130675503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Plasma doping control by mass metrology 等离子体兴奋剂质量计量控制
2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2008-12-02 DOI: 10.1109/RTP.2008.4690544
J. Everaert, G. Zschatzsch, G. Vecchio, W. Vandervorst, L. Cunnane
{"title":"Plasma doping control by mass metrology","authors":"J. Everaert, G. Zschatzsch, G. Vecchio, W. Vandervorst, L. Cunnane","doi":"10.1109/RTP.2008.4690544","DOIUrl":"https://doi.org/10.1109/RTP.2008.4690544","url":null,"abstract":"We show that accurate mass metrology can determine how dopants are added or material is removed during the plasma doping process. In case of erosion, information of mass reduction rate and selectivity can be obtained. Although deposition and erosion can occur simultaneous with implantation, a method is presented how to distinguish these basic reactions. Mass monitoring before and after anneal, reveals that As is very volatile. In the search for a solution we present a post treatment which reduces this loss, hence achieving lower sheet resistance.","PeriodicalId":317927,"journal":{"name":"2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123436785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High mobility and advanced channels materials 高流动性和先进的渠道材料
2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2008-12-02 DOI: 10.1109/RTP.2008.4690534
Jungwoo Oh, P. Majhi, R. Jammy
{"title":"High mobility and advanced channels materials","authors":"Jungwoo Oh, P. Majhi, R. Jammy","doi":"10.1109/RTP.2008.4690534","DOIUrl":"https://doi.org/10.1109/RTP.2008.4690534","url":null,"abstract":"• Ge based channels appear promising for high mobility pMOSFETs - Need for module level (epi, gate stack, junctions, contacts) optimization as demonstrated • Demonstrated additivity of strain (uniaxial) to the mobility of Ge based channels • Several challenges remain but exciting opportunities for focused research (academic and industry collaboration)","PeriodicalId":317927,"journal":{"name":"2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"04 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129227473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Parasitic resistance and leakage reduction by raised source / drain extention fabricated with cluster ion implantation and millisecond annealing 簇离子注入和毫秒退火制备的源/漏凸起延伸的寄生电阻和泄漏降低
2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2008-12-02 DOI: 10.1109/RTP.2008.4690561
K. Yako, Toyoji Yamamoto, K. Uejima, T. Ikezawa, M. Hane
{"title":"Parasitic resistance and leakage reduction by raised source / drain extention fabricated with cluster ion implantation and millisecond annealing","authors":"K. Yako, Toyoji Yamamoto, K. Uejima, T. Ikezawa, M. Hane","doi":"10.1109/RTP.2008.4690561","DOIUrl":"https://doi.org/10.1109/RTP.2008.4690561","url":null,"abstract":"We designed and fabricated sub-30 nm gate length pMOSFETs developing the raised source/drain extension (RSDext) process. Our process features usages of cluster-ion (B18H22) implantation and high-temperature millisecond annealing processes and a facet-structure-control of the RSDext of less than 10 nm thickness for suppressing a fringe capacitance increase for the “effective” ultra-shallower junction formation. As the results, experimentally obtained our pMOSFETs with raised source/drain extension show almost the same LMIN, 1/2 times lower parasitic resistance and lower junction leakage.","PeriodicalId":317927,"journal":{"name":"2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129043130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Wavelength and polarization dependent absorbtion effects in millisecond annealing of metal gate structures 金属栅结构毫秒退火中波长和极化相关的吸收效应
2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2008-12-02 DOI: 10.1109/RTP.2008.4690557
D. Ceperley, A. Neureuther, A. Hawryluk, Xiaoru Wang, M. Shen, Yun Wang
{"title":"Wavelength and polarization dependent absorbtion effects in millisecond annealing of metal gate structures","authors":"D. Ceperley, A. Neureuther, A. Hawryluk, Xiaoru Wang, M. Shen, Yun Wang","doi":"10.1109/RTP.2008.4690557","DOIUrl":"https://doi.org/10.1109/RTP.2008.4690557","url":null,"abstract":"Finite difference time domain simulation of the electromagnetic coupling in millisecond radiation heating is used to explore how the energy couples, where it goes in the device structure, and wavelength dependencies. Millisecond annealing is advantageous for improving IC device characteristics; however, the application of short time scale annealing requires very careful control over the localized heating that can be pattern, device structure, and material dependent. The presence of metal gate structure introduces extra complexity. This paper considers the case of tungsten gates on poly-silicon pedestals with or without silicon nitride caps. Rigorous finite difference time domain techniques are used to compute the fields throughout the device structure as a function of polarization, angle of incidence, wavelength, CD, and pitch. One of the dominant effects is that a grating formed by a metal gate array acts like a polarizer. Thus the coupling changes with grating orientation. The coupling is the strongest when the incident plane is perpendicular to the gate and the electric field is p-polarized. In the case of laser light with a 10 μm wavelength incident near silicon’s Brewster angle, the absorptivity approaches 100% just as if the tungsten metal gates do not exist. Data from similar studies at shorter wavelengths is also presented as well as a comparison with experimental measurements.","PeriodicalId":317927,"journal":{"name":"2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133193584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Emission feedback control system for sub-millisecond laser spike anneal 亚毫秒激光脉冲退火发射反馈控制系统
2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2008-12-02 DOI: 10.1109/RTP.2008.4690550
J. Mcwhirter, D. Gaines, P. Zambon
{"title":"Emission feedback control system for sub-millisecond laser spike anneal","authors":"J. Mcwhirter, D. Gaines, P. Zambon","doi":"10.1109/RTP.2008.4690550","DOIUrl":"https://doi.org/10.1109/RTP.2008.4690550","url":null,"abstract":"For the successful implementation of any advanced annealing system in a production environment, real-time measurement and control of wafer peak temperature is critical. For sub-millisecond laser anneal (SMA), the uniformity and repeatability of wafer peak temperature is limited by a variety of local and global effects. Two examples are variations in substrate temperature, and optical power fluctuations which are primarily caused by changes in the transmittance of the beam delivery system. We report on characterization and temperature uniformity performance of a laser spike anneal (LSA) system utilizing a closed loop feedback control system based on thermal emission from the local anneal site. We also report on the results of a characterization of a silicon wafer’s thermal response to temporal variations in incident optical power. Finally, we show that a properly designed measurement and control system enables the achievement of uniform and repeatable peak anneal temperatures.","PeriodicalId":317927,"journal":{"name":"2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131674189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Free form microlens sysems enable new laser beam profiles for RTP 自由形式微透镜系统为RTP提供了新的激光束轮廓
2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2008-12-02 DOI: 10.1109/RTP.2008.4690552
D. Hauschild, P. Harten, L. Aschke, V. Lissotschenko
{"title":"Free form microlens sysems enable new laser beam profiles for RTP","authors":"D. Hauschild, P. Harten, L. Aschke, V. Lissotschenko","doi":"10.1109/RTP.2008.4690552","DOIUrl":"https://doi.org/10.1109/RTP.2008.4690552","url":null,"abstract":"The use of laser technologies for the well defined selective heating of wafers and thin film semiconductors for melt and non-melt RTP processes is an alternative way to fulfil the design goals of next generation semiconductor devices for data processing or photovoltaic. A variety of efficient and reliable laser sources are available from UV to IR that can match the absorption characteristics of nearly any material. To make technical and economical use of these advantages the laser power has to be focussed on the surface with a well defined beam geometry and intensity profile. For a fast processing of 300mm wafers or Gen 8 LCD or solar panels a beam with line or rectangular geometry is needed. In addition to the beam geometry, the intensity distribution in scanning direction is an essential parameter for a controlled temporal heating and cooling profile of the materials. These beam profiles control the vertical thermal penetration depth and reduce the thermal load of the semiconductor layers and substrates by faster scanning speed and μs- and ns-illumination regime.","PeriodicalId":317927,"journal":{"name":"2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"245 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131882365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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