高流动性和先进的渠道材料

2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2008-12-02 DOI:10.1109/RTP.2008.4690534

Jungwoo Oh, P. Majhi, R. Jammy

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引用次数: 0

摘要

•基于Ge的通道有望用于高迁移率的pmosfet -需要模块级(epi，栅极堆栈，结，触点)优化，证明了应变(单轴)对基于Ge的通道迁移率的可加性•仍然存在一些挑战，但令人兴奋的机会是重点研究(学术和行业合作)

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High mobility and advanced channels materials

• Ge based channels appear promising for high mobility pMOSFETs - Need for module level (epi, gate stack, junctions, contacts) optimization as demonstrated • Demonstrated additivity of strain (uniaxial) to the mobility of Ge based channels • Several challenges remain but exciting opportunities for focused research (academic and industry collaboration)

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2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors

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