V. Andreev, V. Aksenov, A. Kazantsev, T. Prutskikh, V. Rumyantsev, E. Tanklevskaya, V. Khvostikov
{"title":"Low-threshold quantum-well AlGaAs heterolasers fabricated by low-temperature liquid phase epitaxy and emitting at wavelengths 730-850 nm","authors":"V. Andreev, V. Aksenov, A. Kazantsev, T. Prutskikh, V. Rumyantsev, E. Tanklevskaya, V. Khvostikov","doi":"10.1063/1.41362","DOIUrl":"https://doi.org/10.1063/1.41362","url":null,"abstract":"An investigation was made of lasers based on AlGaAs heterostructures and emitting at wavelengths of 730-850 nm, which were varied by altering the AlAs content in a single quantum well of 150 A thickness. These structures were grown by low-temperature liquid phase epitaxy. The lowest values of the threshold current density j th were 380 A/cm 2 for emission at λ l =760 nm and 120 A/cm 2 for λ l =845 nm; these values were obtained for a resonator L=700 μm long","PeriodicalId":316087,"journal":{"name":"Soviet physics. Semiconductors","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114849799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Nature of the bulk 1/f noise in GaAs and Si (review)","authors":"N. V. D’yakonova, M. Levinshtein, S. L. Rumyantev","doi":"10.1063/1.44616","DOIUrl":"https://doi.org/10.1063/1.44616","url":null,"abstract":"It is demonstrated, that the bulk 1/f noise in semiconductors can appear as a result of fluctuations of the occupancy of levels formed density‐of‐states tail near the band edge. It is shown that in pure Si with value of Hooge parameter α=10−4–10−6 and n‐GaAs with α=10−4–10−5 the nature of 1/f bulk noise is determined by this mechanism. Phenomenological model of the bulk 1/f noise in semiconductors is developed. This model explained well all main experimental data. The model predicts some new physical effects. All these effects have been observed experimentally.","PeriodicalId":316087,"journal":{"name":"Soviet physics. Semiconductors","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133028639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Temperature dependence of the photoconductivity of p-type a-Si:H","authors":"A. Kazanskii, S. Kuznetsov","doi":"10.1002/PSSB.2221680142","DOIUrl":"https://doi.org/10.1002/PSSB.2221680142","url":null,"abstract":"","PeriodicalId":316087,"journal":{"name":"Soviet physics. Semiconductors","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130841999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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