V. Andreev, V. Aksenov, A. Kazantsev, T. Prutskikh, V. Rumyantsev, E. Tanklevskaya, V. Khvostikov
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引用次数: 1
摘要
研究了一种基于AlGaAs异质结构的激光器，其发射波长为730 ~ 850 nm，通过改变厚度为150 a的单量子阱中AlAs的含量来改变其波长。这些结构是通过低温液相外延生长出来的。在λ l =760 nm和λ l =845 nm处，阈值电流密度最小值分别为380 A/cm 2和120 A/cm 2;这些值是在L=700 μm长的谐振腔中得到的
Low-threshold quantum-well AlGaAs heterolasers fabricated by low-temperature liquid phase epitaxy and emitting at wavelengths 730-850 nm
An investigation was made of lasers based on AlGaAs heterostructures and emitting at wavelengths of 730-850 nm, which were varied by altering the AlAs content in a single quantum well of 150 A thickness. These structures were grown by low-temperature liquid phase epitaxy. The lowest values of the threshold current density j th were 380 A/cm 2 for emission at λ l =760 nm and 120 A/cm 2 for λ l =845 nm; these values were obtained for a resonator L=700 μm long
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