Nature of the bulk 1/f noise in GaAs and Si (review)

Abstract

It is demonstrated, that the bulk 1/f noise in semiconductors can appear as a result of fluctuations of the occupancy of levels formed density‐of‐states tail near the band edge. It is shown that in pure Si with value of Hooge parameter α=10−4–10−6 and n‐GaAs with α=10−4–10−5 the nature of 1/f bulk noise is determined by this mechanism. Phenomenological model of the bulk 1/f noise in semiconductors is developed. This model explained well all main experimental data. The model predicts some new physical effects. All these effects have been observed experimentally.